High-Range Semiconductor Load Sensor Device
    5.
    发明申请

    公开(公告)号:US20200095114A1

    公开(公告)日:2020-03-26

    申请号:US16560518

    申请日:2019-09-04

    Abstract: A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.

    Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

    公开(公告)号:US10724909B2

    公开(公告)日:2020-07-28

    申请号:US15894770

    申请日:2018-02-12

    Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

    MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR

    公开(公告)号:US20180372564A1

    公开(公告)日:2018-12-27

    申请号:US16019092

    申请日:2018-06-26

    Abstract: A microelectromechanical transducer includes a semiconductor body having first and second surfaces opposite to one another. A plurality of trenches extend in the semiconductor body from the first surface towards the second surface, including a first pair of trenches having a respective main direction of extension along a first axis, and a second pair of trenches having a respective main direction of extension along a second axis orthogonal to the first axis. A first piezoresistive sensor and a second piezoresistive sensor extend at the first surface of the semiconductor body respectively arranged between the first and second pair of trenches. The first piezoresistive sensor, the second piezoresistive sensor and the plurality of trenches form an active region. A first structural body is mechanically coupled to the first surface of the semiconductor body to form a first sealed cavity which encloses the active region.

    Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

    公开(公告)号:US11009412B2

    公开(公告)日:2021-05-18

    申请号:US16904123

    申请日:2020-06-17

    Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

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