公开(公告)号：US11133778B2

公开(公告)日：2021-09-28

申请号：US15907006

申请日：2018-02-27

申请人： SUNPOWER CORPORATION

发明人： Michael J. Defensor ,  Xiuwen Tu ,  Junbo Wu ,  David D. Smith

IPC分类号： H01L31/0443 ,  H01L31/028 ,  H02S50/10 ,  H01L31/18 ,  H01L27/142 ,  H01L31/068

摘要： A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.

公开(公告)号：US10950740B2

公开(公告)日：2021-03-16

申请号：US16199783

申请日：2018-11-26

申请人： SunPower Corporation

发明人： David D. Smith ,  Ann Waldhauer ,  Venkatasubramani Balu ,  Kieran Mark Tracy

IPC分类号： H01L31/044 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0224

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and the resulting solar cells, are described herein. In an example, a solar cell includes an N-type semiconductor substrate having a light-receiving surface and a back surface. A plurality of N-type polycrystalline silicon regions is disposed on a first thin dielectric layer disposed on the back surface of the N-type semiconductor substrate. A plurality of P-type polycrystalline silicon regions is disposed on a second thin dielectric layer disposed in a corresponding one of a plurality of trenches interleaving the plurality of N-type polycrystalline silicon regions in the back surface of the N-type semiconductor substrate.

公开(公告)号：US20200335642A1

公开(公告)日：2020-10-22

申请号：US16918218

申请日：2020-07-01

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith

IPC分类号： H01L31/0216 ,  H01L31/0443 ,  H01L31/0224 ,  H01L31/0745 ,  H01L27/142

摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.

公开(公告)号：US20200274008A1

公开(公告)日：2020-08-27

申请号：US16825728

申请日：2020-03-20

申请人： SunPower Corporation

发明人： David D. Smith

IPC分类号： H01L31/0216 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/028 ,  H01L31/0376

摘要： A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

公开(公告)号：US10714647B2

公开(公告)日：2020-07-14

申请号：US16506796

申请日：2019-07-09

申请人： SunPower Corporation

发明人： David D. Smith

IPC分类号： H01L31/068 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/02

摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

公开(公告)号：US20200075784A1

公开(公告)日：2020-03-05

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/0745 ,  H01L31/068 ,  H01L31/20

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

公开(公告)号：US10224442B2

公开(公告)日：2019-03-05

申请号：US15334706

申请日：2016-10-26

申请人： SUNPOWER CORPORATION

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0236 ,  H01L31/0352 ,  H01L33/44 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US10217878B2

公开(公告)日：2019-02-26

申请号：US15089381

申请日：2016-04-01

申请人： SUNPOWER CORPORATION

发明人： Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

IPC分类号： H01L31/05 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/0747

摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

公开(公告)号：US09929298B2

公开(公告)日：2018-03-27

申请号：US15585382

申请日：2017-05-03

申请人： SUNPOWER CORPORATION

发明人： David D. Smith

IPC分类号： H01L31/06 ,  H01L31/068 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

公开(公告)号：US09263602B2

公开(公告)日：2016-02-16

申请号：US14061584

申请日：2013-10-23

申请人： SUNPOWER CORPORATION

发明人： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

摘要翻译： 通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。 通过用具有基本上均匀的厚度的膜代替在扩散区上形成的膜来促进使用激光来形成接触孔。 接触孔可以形成到深扩散区域，以增加激光烧蚀过程边缘。 可以调整激光器配置以通过不同厚度的介电膜形成接触孔。