Abstract:
A method of manufacturing a display device, the method including: forming, on a first surface of a substrate, a gate line and a gate electrode; forming a first dielectric layer on the gate line and the gate electrode; forming a data line, a source electrode and a drain electrode on the first dielectric layer; forming a black matrix layer on the first dielectric layer, the data line, the source electrode, and the drain electrode; radiating ultraviolet light on a second surface of the substrate opposing the first surface, the ultraviolet light developing exposed parts of the black matrix layer to form a black matrix pattern; and etching the first dielectric layer using the black matrix pattern as an etching mask to respectively form a first dielectric pattern on the gate line and a gate dielectric pattern on the gate electrode.
Abstract:
A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 μm to about 10.8 μm.
Abstract:
A display device includes: a substrate; a transistor disposed on the substrate; a pixel electrode connected to the transistor; a bank layer disposed on the pixel electrode having a pixel opening overlapping the pixel electrode; an emission layer disposed in the pixel opening; a common electrode disposed on the emission layer and the bank layer; an encapsulation layer disposed on the common electrode; a sensing electrode disposed on the encapsulation layer; a first insulator disposed on the encapsulation layer to overlap the pixel opening; a second insulator disposed outside the first insulator; and a third insulator disposed outside the second insulator. The first insulator has a first refractive index, the second insulator has a second refractive index, and the third insulator has a third refractive index, and the first refractive index, and wherein the second refractive index, and the third refractive index are different from each other.
Abstract:
A display device includes: a substrate; a transistor disposed on the substrate; a pixel electrode connected to the transistor; a bank layer disposed on the pixel electrode having a pixel opening overlapping the pixel electrode; an emission layer disposed in the pixel opening; a common electrode disposed on the emission layer and the bank layer; an encapsulation layer disposed on the common electrode; a sensing electrode disposed on the encapsulation layer; a first insulator disposed on the encapsulation layer to overlap the pixel opening; a second insulator disposed outside the first insulator; and a third insulator disposed outside the second insulator. The first insulator has a first refractive index, the second insulator has a second refractive index, and the third insulator has a third refractive index, and the first refractive index, and wherein the second refractive index, and the third refractive index are different from each other.
Abstract:
A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.
Abstract:
A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.
Abstract:
An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 μm, and a transmission ratio of the halftone layer may range from about 10% to about 50%.
Abstract:
A display device includes a substrate including a display area and a non-display area surrounding the display area, a light emitting structure disposed on the substrate in the display area, a thin film encapsulation layer disposed on the light emitting structure, an optical structure including a first refractive pattern and a second refractive pattern, and a partition wall disposed on the substrate in the non-display area and surrounding the second refractive pattern. The first refractive pattern is disposed on the thin film encapsulation layer, and overlaps the light emitting structure. The second refractive pattern covers the first refractive pattern, has a refractive index smaller than a refractive index of the first refractive pattern, and includes an organic material.
Abstract:
A display panel includes a transmission area, a boundary area adjacent to the transmission area, a display area adjacent to the boundary area, an overcoat layer in the boundary area, a light emitting element in the display area, a first refractive layer on the light emitting element and including the same material as the overcoat layer, and a second refractive layer on the first refractive layer and having a refractive index less than a refractive index of the first refractive layer.
Abstract:
Provided is a display device, including a display panel. An input sensing panel is disposed on the display panel. The input sensing panel includes a plurality of first sensor units arranged along a first direction. A first connection unit is configured to connect the first sensor units. A plurality of second sensor units are arranged along a second direction crossing the first direction. A second connection unit is configured to connect the second sensor units. A first insulation layer is disposed between the first connection unit and the second connection unit. A second insulation layer covers the first insulation layer. A plurality of holes is provided on an upper surface of the second insulation layer, and a thickness of the second insulation layer is greater than a depth of each of the plurality of holes.