公开(公告)号：US20150138890A1

公开(公告)日：2015-05-21

申请号：US14610584

申请日：2015-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Hwa KANG ,  Sang-Wan NAM ,  Donghyuk CHAE ,  ChiWeon YOON

IPC: G11C16/08 ,  H01L27/115 ,  G11C16/04

CPC classification number: G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

Abstract translation: 非易失性存储器件包括具有连接在衬底和多个位线之间并由选择线选择的多个单元串的存储单元阵列，以及配置成在至少两个方向上驱动选择线的选通电路。

公开(公告)号：US20130107629A1

公开(公告)日：2013-05-02

申请号：US13721963

申请日：2012-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunil SHIM ,  Jaehoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/34

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array including a plurality of memory cells; a word line driver configured to at least one of select and unselect a plurality of word lines connected with the plurality of memory cells, respectively, and to supply voltages to the plurality of word lines; and a read/write circuit configured to apply bias voltages to a plurality of bit lines connected with the plurality of memory cells. The read/write circuit may be configured to adjust levels of the bias voltages applied to the plurality of bit lines according to location of a selected word line among the plurality of word lines.

Abstract translation: 根据发明构思的示例实施例，非易失性存储器件包括包括多个存储器单元的存储单元阵列; 字线驱动器，被配置为分别选择和取消选择与所述多个存储器单元连接的多个字线中的至少一个，并向所述多个字线提供电压; 以及读/写电路，被配置为向与多个存储单元连接的多个位线施加偏置电压。 读/写电路可以被配置为根据多个字线中所选择的字线的位置来调整施加到多个位线的偏置电压的电平。

公开(公告)号：US20230268017A1

公开(公告)日：2023-08-24

申请号：US18310843

申请日：2023-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/3418 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/4085 ,  G11C11/4096 ,  H10B43/27 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10 ,  H10B43/35

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20140092685A1

公开(公告)日：2014-04-03

申请号：US14052227

申请日：2013-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chi Weon YOON ,  Donghyuk CHAE ,  Jae-Woo PARK ,  Sang-Wan NAM

IPC: G11C16/34 ,  G11C16/16 ,  G11C16/04

CPC classification number: G11C16/3445 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/16 ,  H01L29/792

Abstract: A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

Abstract translation: 操作非易失性存储器件的方法包括对与多个串选择线（SSL）相关联的存储器单元执行擦除操作，与构成存储块的多个SSL相关联的存储器单元，以及将擦除操作 在对与第一SSL相关联的第一存储器单元进行擦除操作之后，与第二SSL相关联的第二存储器单元。

公开(公告)号：US20130242667A1

公开(公告)日：2013-09-19

申请号：US13867716

申请日：2013-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/08 ,  G11C16/26 ,  G11C16/14 ,  G11C16/12

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20200234782A1

公开(公告)日：2020-07-23

申请号：US16844317

申请日：2020-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20150117118A1

公开(公告)日：2015-04-30

申请号：US14590665

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/14

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20220093195A1

公开(公告)日：2022-03-24

申请号：US17542183

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/04 ,  H01L27/11582 ,  G11C5/06 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4096 ,  G11C16/08 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/10

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20190096495A1

公开(公告)日：2019-03-28

申请号：US16206383

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.