公开(公告)号：US11469202B2

公开(公告)日：2022-10-11

申请号：US17029639

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min Son ,  Jeong-Gi Jin ,  Jin-Ho An ,  Jin-Ho Chun ,  Kwang-Jin Moon ,  Ho-Jin Lee

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern.

公开(公告)号：US09240366B2

公开(公告)日：2016-01-19

申请号：US14168317

申请日：2014-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Gi Jin ,  Ho-Joon Lee ,  Ji-Woong Sue ,  Joo-Hee Jang

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/367 ,  H01L25/065 ,  H01L23/31 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/522 ,  H01L23/5225 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0346 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05552 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06051 ,  H01L2224/06136 ,  H01L2224/06181 ,  H01L2224/06517 ,  H01L2224/06519 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17517 ,  H01L2224/17519 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014

Abstract: Provided are a semiconductor device, a semiconductor package, and an electronic system. The device includes a substrate having a front side and a back side disposed opposite the front side. An internal circuit is disposed on or near to the front side of the substrate. Signal I/O through-via structures are disposed in the substrate. Back side conductive patterns are disposed on the back side of the substrate and electrically connected to the signal I/O through-via structures. A back side conductive structure is disposed on the back side of the substrate and spaced apart from the signal I/O through-via structures. The back side conductive structure includes parallel supporter portions.

Abstract translation: 提供半导体器件，半导体封装和电子系统。 该装置包括具有与前侧相对设置的前侧和后侧的基板。 内部电路设置在基板的正面上或附近。 信号I / O通孔结构设置在基板中。 背面导电图案设置在基板的背面并电连接到信号I / O通孔结构。 背面导电结构设置在基板的背面并与信号I / O通孔结构隔开。 背面导电结构包括平行支撑部分。

公开(公告)号：US10833032B2

公开(公告)日：2020-11-10

申请号：US16052383

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min Son ,  Jeong-Gi Jin ,  Jin-Ho An ,  Jin-Ho Chun ,  Kwang-Jin Moon ,  Ho-Jin Lee

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.