公开(公告)号：US20180342391A1

公开(公告)日：2018-11-29

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee PARK ,  Youn-soo KIM ,  Hyun-jun KIM ,  Jin-sun LEE ,  Jae-soon LIM

IPC: H01L21/02 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/108 ,  C23C16/06 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02356 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/40117

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US20170211183A1

公开(公告)日：2017-07-27

申请号：US15482005

申请日：2017-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/28 ,  H01L27/11582 ,  H01L21/02 ,  H01L27/108

CPC classification number: H01L21/28008 ,  C23C16/045 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10852 ,  H01L27/10879 ,  H01L27/11582 ,  H01L29/401 ,  H01L29/40117 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US20210140048A1

公开(公告)日：2021-05-13

申请号：US17153281

申请日：2021-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: C23C16/52 ,  H01J37/32 ,  C23C16/455 ,  H01L21/67

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

公开(公告)号：US20170040172A1

公开(公告)日：2017-02-09

申请号：US15227089

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-min MOON ,  Youn-soo KIM ,  Han-jin LIM ,  Yong-jae LEE ,  Se-hoon OH ,  Hyun-jun KIM ,  Jin-sun LEE

IPC: H01L21/28 ,  C23C16/50 ,  H01L29/40 ,  C23C16/455

CPC classification number: H01L21/28008 ,  C23C16/045 ,  C23C16/405 ,  C23C16/4408 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45561 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28282 ,  H01L27/10852 ,  H01L27/10879 ,  H01L27/11582 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract translation: 形成材料层的方法包括将基底提供到反应室中，将源材料提供到基底上，源材料是具有配体的金属或半金属的前体，在基底上提供醚基改性剂，清洗 反应室的内部，并使反应材料与源材料反应以形成材料层。