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    SEMICONDUCTOR DEVICE FABRICATING METHOD
    1.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATING METHOD 有权

    公开(公告)号：US20240371784A1

    公开(公告)日：2024-11-07

    申请号：US18535167

    申请日：2023-12-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Soo Park ,  Jung Han Lee

    IPC: H01L23/544 ,  H01L21/768

    Abstract: The present disclosure relates to semiconductor device fabricating methods. An example semiconductor device fabricating method comprises forming a substrate including a chip area and an outside chip area and having a first surface and a second surface opposite to the first surface, forming a first trench, having a first width on the first surface, in the outside chip area of the substrate, forming a second trench, having a second width smaller than the first width, within the first trench, forming a first overlay key filling the first trench and the second trench, forming an active pattern on the first surface of the substrate, forming a source/drain pattern and a gate electrode on the active pattern in the chip area, and forming a backside contact on the second surface using a bottom surface of the first overlay key in the second trench.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250157942A1

    公开(公告)日：2025-05-15

    申请号：US18647135

    申请日：2024-04-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jisoo Park ,  Jung Han Lee

    IPC: H01L23/544 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775

    Abstract: A semiconductor device includes a substrate including a logic cell region including active patterns spaced apart in a first direction and extending in a second direction different from the first direction, and an overlay key region including a back-side key pattern and a front-side key pattern, source/drain patterns on the active patterns of the logic cell region and spaced apart in the second direction, a channel pattern between the source/drain patterns, and a gate pattern extending in the first direction, crossing between the source/drain patterns, and surrounding at least a part of the channel pattern, wherein the substrate has an upper surface and a lower surface facing each other in a third direction different from the first direction and the second direction, and the back-side key pattern of the overlay key region extends into the lower surface of the substrate.

    Semiconductor device and method for fabricating the same
    7.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US11282835B2

    公开(公告)日：2022-03-22

    申请号：US16735984

    申请日：2020-01-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Yong Kwon ,  Byoung-Gi Kim ,  Ki Hwan Lee ,  Jung Han Lee

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

    Method for fabricating semiconductor device
    10.
    发明授权
    Method for fabricating semiconductor device 有权

    公开(公告)号：US11670636B2

    公开(公告)日：2023-06-06

    申请号：US17577549

    申请日：2022-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Yong Kwon ,  Byoung-Gi Kim ,  Ki Hwan Lee ,  Jung Han Lee

    IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L29/6681 ,  H01L29/7851

    Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

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