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公开(公告)号：US20240177764A1
公开(公告)日：2024-05-30
申请号：US18223783
申请日：2023-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Su Chang Jeon , Woohyun Kang , Seungkyung Ro , Sangkwon Moon , Heewon Lee
IPC: G11C11/408 , G06F3/06
CPC classification number: G11C11/4085 , G06F3/0614 , G06F3/0658 , G06F3/0659 , G06F3/0679 , G11C11/4087
Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.
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公开(公告)号：US12165694B2
公开(公告)日：2024-12-10
申请号：US18223783
申请日：2023-07-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Su Chang Jeon , Woohyun Kang , Seungkyung Ro , Sangkwon Moon , Heewon Lee
IPC: G06F3/06 , G11C11/408
Abstract: Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.
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公开(公告)号：US11322206B2
公开(公告)日：2022-05-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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公开(公告)号：US10802728B2
公开(公告)日：2020-10-13
申请号：US16416750
申请日：2019-05-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kwangwoo Lee , Chanha Kim , Yunjung Lee , Jisoo Kim , Seungkyung Ro , Jinwook Lee , Heewon Lee
Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.
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Patent Agency Ranking
公开(公告)号：US20210166764A1
公开(公告)日：2021-06-03
申请号：US17036060
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinwoo Hong , Chanha Kim , Kangho Roh , Seungkyung Ro , Yunjung Lee , Heewon Lee
Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.
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公开(公告)号：US11004517B2
公开(公告)日：2021-05-11
申请号：US16356182
申请日：2019-03-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yunjung Lee , Chanha Kim , Suk-eun Kang , Seungkyung Ro , Kwangwoo Lee , Juwon Lee , Jinwook Lee , Heewon Lee
Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.
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公开(公告)号：US20200058359A1
公开(公告)日：2020-02-20
申请号：US16356182
申请日：2019-03-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yunjung Lee , Chanha Kim , Suk-eun Kang , Seungkyung Ro , Kwangwoo Lee , Juwon Lee , Jinwook Lee , Heewon Lee
Abstract: A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.
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公开(公告)号：US10424388B2
公开(公告)日：2019-09-24
申请号：US15615849
申请日：2017-06-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunkyo Oh , Seungkyung Ro , Heewon Lee , Seongnam Kwon , Oak-Ha Kim , Donggi Lee
IPC: G11C29/00 , G11C16/34 , G06N20/00 , G11C29/04 , G11C29/52 , G11C7/14 , G11C11/56 , G11C16/26 , G11C29/02 , G11C29/42 , G11C16/04
Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.
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9.发明授权Data storage device including nonvolatile memory device and operating method thereof 有权包括非易失性存储装置的数据存储装置及其操作方法公开(公告)号：US09589640B2
公开(公告)日：2017-03-07
申请号：US14991173
申请日：2016-01-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangkwon Moon , Sang-Hwa Han , Seungkyung Ro
CPC classification number: G11C16/0483 , G11C16/0466 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/26 , G11C16/28 , G11C16/32 , G11C16/349 , G11C16/3495
Abstract: A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.
Abstract translation: 提供了一种操作包括非易失性存储装置和存储器控制器的数据存储装置的方法。 该方法包括从多条选择线与参考电压读取连接到第一选择线的第一选择晶体管，确定来自第一选择晶体管的第一数量的选择晶体管是否具有小于 参考电压大于第一参考值，并且如果第一数量大于第一参考值，则将第一选择晶体管编程为具有大于或等于目标电压的阈值电压。
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