公开(公告)号：US20210397079A1

公开(公告)日：2021-12-23

申请号：US17464826

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20240421854A1

公开(公告)日：2024-12-19

申请号：US18704019

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungi JEONG ,  Junhwa OH ,  Sanghyuk WI ,  Seungyoon LEE ,  Yuntae PARK

IPC: H04B5/43 ,  H01Q1/24 ,  H01Q3/44 ,  H04B7/04 ,  H04W16/28 ,  H04W88/10

Abstract: Provided is a 5G or 6G communication system for supporting higher data rates after the 4G communication system such as LTE.
According to the disclosure, a base station (BS) including a near field reflecting intelligent surface (RIS) may include the near field RIS including at least one meta surface which reflects an RIS beam into a target area, a transceiver and a processor. The processor may be configured to identify an operation mode among a normal mode or an RIS mode based on whether a target area is included in a reflecting beam coverage, and control the transceiver to transmit the RIS beam onto the meta surface based on at least one of a type of the near field RIS, configuration information of the near field RIS or information about the target area, in response to the operation mode being identified as the RIS mode.

公开(公告)号：US20240160115A1

公开(公告)日：2024-05-16

申请号：US18347129

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong JUNG ,  Dohun KIM ,  Joonhyun KIM ,  Jeongjin LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: G03F7/00 ,  H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/706839 ,  H01L21/027

Abstract: Provided are an overlay correction method for effectively correcting an overlay due to degradation of a wafer table, and an exposure method and a semiconductor device manufacturing method, which include the overlay correction method, wherein the overlay correction method includes acquiring leveling data regarding a wafer, converting the leveling data into overlay data, splitting a shot into sub-shots via shot size split, extracting a model for each sub-shot from the overlay data, and correcting an overlay parameter of exposure equipment on the basis of the model for each sub-shot, wherein the correction of the overlay parameter is applied in real time to an exposure process for the wafer in a feedforward method.

公开(公告)号：US20240152064A1

公开(公告)日：2024-05-09

申请号：US18372296

申请日：2023-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mincheol KWAK ,  Jeongjin LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: G03F9/00 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F9/7073 ,  G03F7/70141 ,  H01L21/027 ,  H01L21/31144

Abstract: A photolithography system includes a light source, a photomask stage, a projection optical system and a wafer stage, and the projection optical system includes an anamorphic lens. In a photolithography method, a wafer and a photomask are mounted on the wafer stage and the photomask stage, respectively, and a first exposure process is performed using the photomask to transfer layouts of patterns included in the photomask to a first half field of the wafer. A relative position of the photomask with respect to the wafer is changed, and a second exposure process is performed to transfer the layouts of the patterns included in the photomask to a second half field of the wafer.

公开(公告)号：US20240007176A1

公开(公告)日：2024-01-04

申请号：US18154604

申请日：2023-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungi JEONG ,  Yuntae PARK ,  Junhwa OH ,  Seungyoon LEE ,  Sanghyuk WI

IPC: H04B7/155 ,  H04B7/026 ,  H01Q15/14

CPC classification number: H04B7/15528 ,  H04B7/026 ,  H01Q15/148

Abstract: The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). A unit cell of a RIS includes a first conductive structure including a first element and a second element disposed under the first element; a second conductive structure including a third element and a fourth element disposed under the third element; and a switch circuit disposed between the first conductive structure and the second conductive structure. As a first RF signal from a first external device is incident on the unit cell, a second RF signal having a first resonance frequency is reflected based on electrical paths formed respectively in the first element and the third element, and a third RF signal having a second resonance frequency different from the first resonance frequency is reflected based on electrical paths formed respectively in the second element and the fourth element.

公开(公告)号：US20250007166A1

公开(公告)日：2025-01-02

申请号：US18708975

申请日：2022-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwoo SEO ,  Jungi JEONG ,  Taeksun KWON ,  Chanju PARK ,  Dongjin JUNG ,  Sanghyuk WI ,  Seungyoon LEE

IPC: H01Q9/04 ,  H01Q21/06

Abstract: The present disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate than a 4G communication system such as LTE. An electronic device comprising an antenna module, according to an embodiment of the present disclosure, comprises: a communication module for communicating with an external electronic device; a first antenna module including a plurality of first antenna cells and first dummy cells surrounding the plurality of first antenna cells; and a controller for controlling the communication module and the first antenna module. Each of the plurality of first antenna cells may be configured to have a first size, and each of the first dummy cells may be configured to have a second size smaller than the first size.

公开(公告)号：US20240222201A1

公开(公告)日：2024-07-04

申请号：US18454219

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inbeom YIM ,  Jeongjin LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: H01L21/66 ,  G03F1/70 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L22/20 ,  G03F1/70 ,  H01L21/0274 ,  H01L21/32139

Abstract: The method including forming a first photoresist (PR) pattern by exposing first field areas of a first PR layer, forming a second PR pattern by exposing first top field areas and first bottom field areas of a second PR layer, measuring a first top intra-field overlay for the first top field areas and a first bottom intra-field overlay for the first bottom field areas, and determining a top intra-field correction parameter and a bottom intra-field correction parameter based on the first top intra-field overlay and the first bottom intra-field overlay, respectively, may be provided.

公开(公告)号：US20240133683A1

公开(公告)日：2024-04-25

申请号：US18460929

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inho KWAK ,  Jinsun KIM ,  Moosong LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG ,  Dohyeon PARK ,  Yeeun HAN

IPC: G01B15/00

CPC classification number: G01B15/00

Abstract: In an overlay measurement method, an overlay mark having programmed overlay values is provided. The overlay mark is scanned with an electron beam to obtain a voltage contrast image. A defect function that changes according to the overlay value is obtained from voltage contrast image data. Self-cross correlation is performed on the defect function to determine an overlay.

公开(公告)号：US20240266744A1

公开(公告)日：2024-08-08

申请号：US18563132

申请日：2022-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeksun KWON ,  Chanju PARK ,  Jungi JEONG ,  Jungwoo SEO ,  Seungyoon LEE ,  Dongjin JUNG

IPC: H01Q9/04 ,  H01Q21/00 ,  H01Q21/06

CPC classification number: H01Q9/0414 ,  H01Q21/0006 ,  H01Q21/065

Abstract: A stacked patch antenna includes an upper ground plate including a first upper hole, a first feed pad provided on the upper ground plate, a first feed line extending from the first feed pad along a first direction, a lower antenna patch provided on the first feed pad, an upper antenna patch provided on the lower antenna patch, a first upper pad provided in the first upper hole, and a first upper stub protruding from a side surface of the first upper pad.

公开(公告)号：US20240152046A1

公开(公告)日：2024-05-09

申请号：US18218246

申请日：2023-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin LEE ,  Doogyu LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: G03F1/70 ,  G03F7/00 ,  G03F7/20

CPC classification number: G03F1/70 ,  G03F7/2004 ,  G03F7/70033 ,  G03F7/70558

Abstract: A method of controlling semiconductor process includes forming a plurality of sample overlay keys by irradiating a first dose of extreme ultraviolet (EUV) light to a first photoresist layer formed on at least one sample wafer; determining a sample correction parameter for correcting a sample overlay error measured from the plurality of sample overlay keys; updating the sample correction parameter based on a difference between the first dose and a second dose; forming a plurality of main overlay keys by irradiating a second dose of extreme ultraviolet light to a second photoresist layer formed on the sample wafer based on the updated sample correction parameter; determining the main correction parameter based on a main overlay error measured from the plurality of main overlay keys; and performing a photolithography process on a wafer different from the sample wafer based on the main correction parameter.