公开(公告)号：US20230244146A1

公开(公告)日：2023-08-03

申请号：US18133166

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Dongjin Semichem Co., Ltd.

Inventor： Miyeong KANG ,  Sukkoo HONG ,  Hyereun KIM ,  Jihyun KIM ,  Hyunjin KIM ,  Hyojung ROH ,  Jongkyoung PARK ,  Jungyoul LEE

IPC: G03F7/09 ,  C08G18/79 ,  C08G18/38 ,  G03F7/039 ,  C09D175/04 ,  G03F7/038

CPC classification number: G03F7/091 ,  C08G18/792 ,  C08G18/3819 ,  G03F7/039 ,  C09D175/04 ,  G03F7/038 ,  C08G18/3802

Abstract: A polymer having a repeating unit represented by Formula 1:






wherein each of R1, R2, and R3 is independently selected from a substituted or unsubstituted C1-C6 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms or a substituted or unsubstituted C3-C6 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms, wherein at least one of R1, R2, and R3 is a hydrocarbon group substituted with a fluorine atom. R4 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms. R5 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms.

公开(公告)号：US20220252976A1

公开(公告)日：2022-08-11

申请号：US17567956

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ji SONG ,  Hyunwoo KIM ,  Sukkoo HONG

IPC: G03F7/004

Abstract: Photoresist compositions may include a metal structure, a radical quencher including a phenolic compound, a photobase generator, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed on a lower film using the photoresist composition. A first area, which is a portion of the photoresist film, is exposed to form a metal network from the metal structure in the first area of the photoresist film, a base is generated from the photobase generator in the first area of the photoresist film, and the radical quencher is deactivated using the base in the first area of the photoresist film. The photoresist film is developed to form a photoresist pattern including the first area. The lower film is processed using the photoresist pattern.

公开(公告)号：US20220334474A1

公开(公告)日：2022-10-20

申请号：US17721852

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjoon LEE ,  Sungan DO ,  Sukkoo HONG ,  Seongji KWON ,  Jonghoon KIM ,  Sooyoung KIM ,  Jaehee CHOI

IPC: G03F7/004 ,  G03F7/038

Abstract: A photoresist composition and a method of fabricating a semiconductor device, the composition including a photosensitive polymer having a protecting group; a photoacid generator (PAG); a metal precursor, the metal precursor being capable of generating metal ions and secondary electrons in response to irradiating light of a 13.5 nm wavelength thereto; and a solvent.

公开(公告)号：US20210223692A1

公开(公告)日：2021-07-22

申请号：US16994957

申请日：2020-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunji SONG ,  Sukkoo HONG ,  Sumin KIM ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Songse YI

IPC: G03F7/004 ,  G03F7/039 ,  C07D277/26 ,  C07D263/32 ,  C07D233/64 ,  C07D213/68

Abstract: A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.

公开(公告)号：US20240337928A1

公开(公告)日：2024-10-10

申请号：US18613810

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hana KIM ,  Haengdeog KOH ,  Hyeran KIM ,  Youngmin NAM ,  Giyoung SONG ,  Changheon LEE ,  Aram JEON ,  Jungha CHAE ,  Songse YI ,  Sukkoo HONG

IPC: G03F7/004

CPC classification number: G03F7/0045

Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.




A description of Formula 1 is provided herein.

公开(公告)号：US20230324791A1

公开(公告)日：2023-10-12

申请号：US18313555

申请日：2023-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyung LEE ,  Sumin KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Giyoung SONG ,  Sukkoo HONG ,  Yoonhyun KWAK ,  Youngmin NAM ,  Byunghee SOHN ,  Sunyoung LEE ,  Aram JEON ,  Sungwon CHOI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C309/12 ,  C07D333/76 ,  C07C381/12

CPC classification number: G03F7/0045 ,  C07C309/12 ,  C07C381/12 ,  C07D333/76 ,  G03F7/038 ,  G03F7/039 ,  C07C2603/74

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1:





wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

公开(公告)号：US20230176477A1

公开(公告)日：2023-06-08

申请号：US17841031

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukkoo HONG ,  Moohyun KOH ,  Kyungoh KIM ,  Yechan KIM ,  Kyunghwan NOH ,  Sungan DO ,  Hyun-Ji SONG

IPC: G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/38 ,  H01L21/0274

Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond, the organometallic compound including a metal core and at least one organic ligand bonded to the metal core, and being configured such that the at least one metal-ligand bond is not breakable by exposure to light or moisture; a photoinitiator generating an acid or a radical in response to exposure to light; and a solvent.

公开(公告)号：US20230120542A1

公开(公告)日：2023-04-20

申请号：US18080348

申请日：2022-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  G03F7/039 ,  C07C309/12

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

公开(公告)号：US20220171284A1

公开(公告)日：2022-06-02

申请号：US17238355

申请日：2021-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyung LEE ,  Sumin KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Giyoung SONG ,  Sukkoo HONG ,  Yoonhyun KWAK ,  Youngmin NAM ,  Byunghee SOHN ,  Sunyoung LEE ,  Aram JEON ,  Sungwon CHOI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C07C381/12 ,  C07C309/12 ,  C07D333/76

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

公开(公告)号：US20210240078A1

公开(公告)日：2021-08-05

申请号：US17005636

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  C07C309/12 ,  G03F7/039

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.