中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

20 records (took 0.017 seconds)

    Image processing device for controlling pixel output level and operating method thereof
    1.
    发明授权
    Image processing device for controlling pixel output level and operating method thereof 有权

    公开(公告)号：US12170856B2

    公开(公告)日：2024-12-17

    申请号：US17823125

    申请日：2022-08-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaeyoung Bae ,  Sunyool Kang ,  Haesick Sul ,  Suyong Kim

    IPC: H04N25/75 ,  H01L27/146 ,  H04N25/709 ,  H04N25/71 ,  H04N25/77 ,  H04N25/79

    Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

    IMAGE SENSORS INCLUDING SHIELDING STRUCTURES
    3.
    发明申请
    IMAGE SENSORS INCLUDING SHIELDING STRUCTURES 审中-公开

    公开(公告)号：US20190260948A1

    公开(公告)日：2019-08-22

    申请号：US16403741

    申请日：2019-05-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhwan Jung ,  Sunyool Kang ,  Kyoungmin Koh ,  Seungjin Lee

    IPC: H04N5/357 ,  H04N9/04 ,  H04N5/374 ,  H04N5/378

    Abstract: An image sensor includes first pixels and second pixels arranged in alternating order along a first direction, first output lines extending in a second direction that is perpendicular to the first direction and respectively connected to the first pixels, second output lines extending in the second direction and respectively connected to the second pixels, first analog circuit blocks and second analog circuit blocks arranged in alternating order along the first direction, and shielding structures disposed each between adjacent ones of the first and second analog circuit blocks. Each of the first analog circuit blocks includes a plurality of first analog circuits respectively connected to the first output lines. Each of the second analog circuit blocks includes a plurality of second analog circuits respectively connected to the second output lines.

    Image sensor having reduced parasitic capacitance
    9.
    发明授权
    Image sensor having reduced parasitic capacitance 有权

    公开(公告)号：US11606523B2

    公开(公告)日：2023-03-14

    申请号：US16890422

    申请日：2020-06-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sunyool Kang ,  Yongjun Cho ,  Yunhwan Jung ,  Heesung Chae ,  Kyungmin Kim ,  Haesick Sul ,  Sukki Yoon

    IPC: H04N5/3745 ,  H01L27/146

    Abstract: An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.

    Comparison circuit including input sampling capacitor and image sensor including the same
    10.
    发明授权
    Comparison circuit including input sampling capacitor and image sensor including the same 有权

    公开(公告)号：US11581255B2

    公开(公告)日：2023-02-14

    申请号：US17192408

    申请日：2021-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yunhwan Jung ,  Sunyool Kang ,  Jaehong Kim

    IPC: H01L23/522 ,  H04N5/357 ,  H04N5/378 ,  H03K4/08 ,  H01L27/08

    Abstract: A comparison circuit that includes an input sampling capacitor and an image sensor including the same are provided. The comparison circuit includes an amplifier configured to receive a pixel signal and a ramp signal to perform a correlated double sampling operation, a first pixel capacitor connected to the amplifier through a first floating node and configured to transmit the pixel signal, a first ramp capacitor connected to the amplifier through a second floating node and configured to transmit the ramp signal, a second pixel capacitor connected in parallel to the first pixel capacitor, and a second ramp capacitor connected in parallel to the first ramp capacitor, wherein the second pixel capacitor is formed between the first floating node and first peripheral routing lines, and the second ramp capacitor is formed between the second floating node and second peripheral routing lines.

Patent Agency Ranking