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公开(公告)号:US20240125039A1
公开(公告)日:2024-04-18
申请号:US18230969
申请日:2023-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junhong PARK , Woojin KIM , Jinbaek KIM , Jihoon CHOI
CPC classification number: D06F58/206 , D06F25/00 , D06F29/005 , D06F37/304 , D06F58/22 , D06F58/24
Abstract: A clothes treating apparatus includes: a cabinet; a tub; a drum; a base forming an air flow path including an air inlet and an air outlet; a heat exchanger; a supply duct forming a first supply flow and a second supply flow path; a discharge duct forming a first discharge flow path and a second discharge flow path; a first damper configured to be movable to a first position of opening the first supply flow path and closing the second supply flow path or a second position of closing the first supply flow path and opening the second supply flow path; and a second damper configured to be movable to a third position of opening the first discharge flow path and closing the second discharge flow path or a fourth position of closing the first discharge flow path and opening the second discharge flow path.
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公开(公告)号:US20240039575A1
公开(公告)日:2024-02-01
申请号:US18377327
申请日:2023-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngmin LEE , Woojin KIM , Hyoseok NA
CPC classification number: H04B1/401 , H04W52/0209
Abstract: Disclosed is an electronic device including a plurality of antennas, a plurality of radio frequency circuits, a first transceiver, a second transceiver, a switching circuit configured to connect the plurality of radio frequency circuits to the first transceiver or the second transceiver, a processor, and a memory. The electronic device may be configured to switch a receiving path by connecting at least one of a plurality of receiving paths to another transceiver based on reception performance of the plurality of receiving paths.
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公开(公告)号:US20240038112A1
公开(公告)日:2024-02-01
申请号:US18311549
申请日:2023-05-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byeungwoong HAN , Seungeun LEE , Woojin KIM , Taihoon KIM
IPC: G09G3/00 , G06F3/04886
CPC classification number: G09G3/035 , G06F3/04886 , G09G2354/00 , G09G2320/08 , G09G2340/12 , G09G2340/0464 , G06F2203/04803
Abstract: According to an embodiment, an electronic device includes: a flexible display, at least one sensor, and a processor; wherein the processor is configured to: control the display to display an object at least partially superimposed on a first user interface displayed on the first display area and the second display area, on a portion of an edge of the first display area; identify that the state of the electronic device is changed from a second state to a first state, while the object is displayed on the portion of the edge of the first display area; display the object the portion of the edge of the second display area extending from the edge of the first display area, in response to identifying that the state of the electronic device is changed from the second state to the first state.
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公开(公告)号:US20170338403A1
公开(公告)日:2017-11-23
申请号:US15360221
申请日:2016-11-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woojin KIM , Keewon KIM , S.P. Stuart PARKIN , Jaewoo JEONG , Mahesh Govind SAMANT
CPC classification number: H01L43/02 , G11C11/161 , H01F10/3218 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.
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公开(公告)号:US20230203744A1
公开(公告)日:2023-06-29
申请号:US18113830
申请日:2023-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Woojin KIM , Junhong PARK , Eungryeol SEO
CPC classification number: D06F58/206 , D06F58/02
Abstract: A clothes dryer including a cabinet, a drum rotatably installed inside the cabinet, a heat pump provided to generate hot air to be supplied to the inside of the drum, a fan provided to induce the hot air generated by the heat pump to the inside of the drum, a hot air supply duct connected to a rear surface of the drum to guide the hot air induced by the fan to the inside of the drum, a scroll provided to accommodate the fan to guide the hot air discharged from the fan to the hot air supply duct, and a discharge duct provided to connect the scroll and the hot air supply duct, wherein a rear surface of the scroll is positioned in front of a rear surface of the hot air supply duct, and the scroll is disposed obliquely in a direction of facing the rear surface of the hot air supply duct.
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公开(公告)号:US20220321162A1
公开(公告)日:2022-10-06
申请号:US17709854
申请日:2022-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngmin LEE , Woojin KIM , Hyoseok NA
Abstract: Disclosed is an electronic device including a plurality of antennas, a plurality of radio frequency circuits, a first transceiver, a second transceiver, a switching circuit configured to connect the plurality of radio frequency circuits to the first transceiver or the second transceiver, a processor, and a memory. The electronic device may be configured to switch a receiving path by connecting at least one of a plurality of receiving paths to another transceiver based on reception performance of the plurality of receiving paths.
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公开(公告)号:US20210020695A1
公开(公告)日:2021-01-21
申请号:US16789546
申请日:2020-02-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghoon BAK , Woojin KIM , Junghwan MOON , Seowon LEE , Nayoung JI
Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.
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公开(公告)号:US20220116085A1
公开(公告)日:2022-04-14
申请号:US17556143
申请日:2021-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Woojin KIM , Kihyug SEONG , Dongil YANG
IPC: H04B7/06 , H04L5/00 , H04B7/0413 , H04B17/318 , H04W72/04
Abstract: A transmission of a sounding reference signal by an electronic device is provided. A method of an electronic device includes transmitting a signal via a first antenna subset including at least one of a plurality of antennas, measuring an emission environment of the plurality of antennas, using the signal, determining at least one antenna to be used for transmitting a sounding reference signal (SRS), based on the emission environment, and transmitting the SRS via the at least one determined antenna. The emission environment includes a strength of a reflected signal that corresponds to the signal and is reflected by the first antenna subset, or a strength of a reception signal that corresponds to the signal and is received by a second antenna subset including at least one remaining antenna.
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公开(公告)号:US20210050508A1
公开(公告)日:2021-02-18
申请号:US16829216
申请日:2020-03-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seowon LEE , Junghwan MOON , Junghoon BAK , Woojin KIM , Hyeongsun HONG
Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.
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公开(公告)号:US20130285178A1
公开(公告)日:2013-10-31
申请号:US13926048
申请日:2013-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jangeun Lee , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
IPC: H01L43/02
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层,第一垂直磁性层和第二垂直磁性层之间的隧道势垒层,以及在第一垂直磁性层之间的交换耦合层, 第一垂直磁性层和第一垂直磁性层的第二子层。
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