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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12148701B2

    公开(公告)日：2024-11-19

    申请号：US18594816

    申请日：2024-03-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hongsik Shin ,  Sanghyun Lee ,  Hakyoon Ahn ,  Seonghan Oh ,  Youngmook Oh

    IPC: H01L23/532 ,  H01L21/308 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L49/02 ,  H01L29/165

    Abstract: A semiconductor device including a metal pattern on a semiconductor substrate; an etch stop layer covering the metal pattern, the etch stop layer including a sequentially stacked first insulation layer, second insulation layer, and third insulation layer; an interlayer dielectric layer on the etch stop layer; and a contact plug penetrating the interlayer dielectric layer and the etch stop layer, the contact plug being connected to the metal pattern, wherein the first insulation layer includes a first insulating material that contains a metallic element and nitrogen, wherein the second insulation layer includes a second insulating material that contains carbon, and wherein the third insulation layer includes a third insulating material that does not contain a metallic element and carbon.

    Integrated circuit devices and methods of manufacturing the same
    4.
    发明授权
    Integrated circuit devices and methods of manufacturing the same 有权

    公开(公告)号：US11552176B2

    公开(公告)日：2023-01-10

    申请号：US17329361

    申请日：2021-05-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sanghyun Lee ,  Sungwoo Kang ,  Jongchul Park ,  Youngmook Oh ,  Jeongyun Lee

    IPC: H01L29/41 ,  H01L29/417 ,  H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45

    Abstract: An integrated circuit device includes a fin-type active area that extends on a substrate in a first direction, a gate structure that extends on the substrate in a second direction and crosses the fin-type active area, source/drain areas arranged on first and second sides of the gate structure, and a contact structure electrically connected to the source/drain areas. The source/drain areas comprise a plurality of merged source/drain structures. Each source/drain area comprises a plurality of first points respectively located on an upper surface of the source/drain area at a center of each source/drain structure, and each source/drain area comprises at least one second point respectively located on the upper surface of the source/drain area where side surfaces of adjacent source/drain structures merge with one another. A bottom surface of the contact structure is non-uniform and corresponds to the first and second points.

    Semiconductor devices and methods of fabricating the same
    6.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权

    公开(公告)号：US10418284B2

    公开(公告)日：2019-09-17

    申请号：US15882190

    申请日：2018-01-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chul Woong Lee ,  Hanseung Kwak ,  Youngmook Oh

    IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L27/11 ,  H01L27/02

    Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10026809B1

    公开(公告)日：2018-07-17

    申请号：US15662248

    申请日：2017-07-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GeumJung Seong ,  JeongYun Lee ,  SeungSoo Hong ,  KyungSeok Min ,  SeungJu Park ,  Youngmook Oh ,  Bora Lim

    IPC: H01L29/76 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/764 ,  H01L27/088 ,  H01L29/08 ,  H01L23/535

    Abstract: Active patterns protrude from a substrate. The active patterns include a first active pattern, a second active pattern spaced apart from the first active pattern at a first distance, and a third active pattern spaced apart from the second active pattern at a second distance greater than the first distance. A gate spacer is disposed on sidewalls of a gate electrode running across the active patterns. Source/drain regions include a first to a third source/drain regions disposed on a region of one of the active patterns. The region of one of the active patterns is disposed adjacent to a side of the gate electrode. First and second protective insulation patterns are disposed on the substrate between the first and second active patterns below the first and second source/drain regions and between the second and third active patterns below the second and third source/drain regions, respectively.

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