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公开(公告)号：US20170125049A1
公开(公告)日：2017-05-04
申请号：US15403040
申请日：2017-01-10
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , David S. Kuo , XiaoMin Yang , Kim Y. Lee , Yautzong Hsu , Koichi Wago
CPC classification number: G11B5/59638 , G11B5/59655 , G11B5/746 , G11B5/84 , G11B5/855 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is a method, including creating a first pattern in a data region of a substrate, and creating a second pattern in a servo region of a substrate. A circumferential line pattern is created overlapping the first pattern to create rectangle-shaped protrusions in the data region of the substrate. A chevron pattern is created overlapping the second pattern to create chevron-derived protrusions in the servo region of the substrate.
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公开(公告)号：US09620161B2
公开(公告)日：2017-04-11
申请号：US14824995
申请日：2015-04-16
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , David S. Kuo , XiaoMin Yang , Kim Y. Lee , Yautzong Hsu , Koichi Wago
CPC classification number: G11B5/59638 , G11B5/59655 , G11B5/746 , G11B5/84 , G11B5/855 , G11B20/1217 , G11B2020/1281
Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.
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公开(公告)号：US20160181102A1
公开(公告)日：2016-06-23
申请号：US15055303
申请日：2016-02-26
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Shuaigang Xiao , Yautzong Hsu , Zhaoning Yu , Kim Y. Lee , David S. Kuo
IPC: H01L21/033
CPC classification number: H01L21/0338 , G03F7/0002 , G11B5/746 , H01L21/0332 , H01L21/0335 , H01L21/0337
Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.
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4.发明申请PATTERNED TEMPLATE WITH 1xN NUCLEATION SITE TO GRAIN GROWTH FOR UNIFORM GRAIN SIZE RECORDING MEDIA 审中-公开带有1xN核心位点的模式，用于均匀粒度记录介质的颗粒生长公开(公告)号：US20140127533A1
公开(公告)日：2014-05-08
申请号：US14154018
申请日：2014-01-13
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , Thomas Young Chang , Yingguo Peng , David S. Kuo , Kaizhong Gao , Thomas P. Nolan , Ganping Ju
CPC classification number: G11B5/7325 , G11B5/84 , G11B5/855
Abstract: A perpendicular magnetic media includes a substrate, a patterned template, a seed layer and a magnetic layer. The patterned template is formed on the substrate and includes a plurality of growth sites that are evenly spaced apart from each other. The seed layer is formed over the patterned template and the exposed areas of the substrate. Magnetic material is sputter deposited onto the seed layer with one grain of the magnetic material nucleated over each of the growth sites. The grain size distribution of the magnetic material is reduced by controlling the locations of the growth sites which optimizes the performance of the perpendicular magnetic media.
Abstract translation: 垂直磁性介质包括衬底，图案化模板，种子层和磁性层。 图案化模板形成在基板上并且包括彼此均匀间隔开的多个生长位点。 种子层形成在图案化模板和基板的暴露区域上。 将磁性材料溅射沉积到种子层上，其中一颗磁性材料成核在每个生长位点上。 通过控制优化垂直磁性介质性能的生长部位的位置来减小磁性材料的粒度分布。
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5.发明申请公开(公告)号：US20210245109A1
公开(公告)日：2021-08-12
申请号：US16924839
申请日：2020-07-09
Applicant: Seagate Technology LLC
Inventor： Thomas Young Chang , Kim Yang Lee , Tan G. Liu , Yautzong Hsu , Shuaigang Xiao
Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.
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Patent Agency Ranking
公开(公告)号：US09964855B2
公开(公告)日：2018-05-08
申请号：US15289505
申请日：2016-10-10
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y. Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
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公开(公告)号：US09928867B2
公开(公告)日：2018-03-27
申请号：US14728908
申请日：2015-06-02
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , XiaoMin Yang , ZhaoNing Yu , Yautzong Hsu
IPC: G11B5/855 , G11B5/74 , H01L21/00 , H01L21/302 , G03F7/00
CPC classification number: G11B5/855 , G03F7/0002 , G11B5/746 , H01L21/00 , H01L21/302 , Y10T428/24802 , Y10T428/24926
Abstract: Provided herein are apparatuses and methods, including patterning a first set of features in a servo zone to form a patterned servo zone while a first mask protects a data zone from the patterning. The first mask may be removed from the data zone. The apparatuses and methods may further include patterning a second set of features in the data zone to form a patterned data zone while a second mask protects the patterned servo zone from the patterning.
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公开(公告)号：US20130186856A1
公开(公告)日：2013-07-25
申请号：US13798087
申请日：2013-03-13
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Shuaigang Xiao , XiaoMin Yang , Yuatzong Hsu , HongYing Wang , Kim Lee
CPC classification number: B05D3/107 , B05C21/005 , B05D3/007 , G03F7/20 , G11B5/746 , G11B5/855 , H01L21/02112 , H01L21/3065 , Y10T428/24802
Abstract: The embodiments disclose a method of fabricating servo integrated templates including depositing a protective layer on servo zone resist layer patterns, patterning integrated data zone features into a substrate, depositing a protective layer on data zones and removing the servo zone protective layer and patterning integrated servo zone features into the substrate and removing the data zone protective layer creating a substrate template used in fabricating data and servo zone integrated patterned stacks.
Abstract translation: 这些实施例公开了一种制造伺服集成模板的方法，包括在伺服区抗蚀剂层图案上沉积保护层，将集成的数据区特征图案化成衬底，在数据区上沉积保护层并移除伺服区保护层， 特征进入衬底并移除数据区保护层，形成用于制造数据和伺服区集成图案化堆叠的衬底模板。
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9.发明申请METHOD OF FABRICATING A BPM TEMPLATE USING HIERARCHICAL BCP DENSITY PATTERNS 审中-公开使用分层BCP密度模式制作BPM模板的方法公开(公告)号：US20170025141A1
公开(公告)日：2017-01-26
申请号：US15289884
申请日：2016-10-10
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Shuaigang Xiao , Kim Y. Lee , Koichi Wago , Philip Steiner
CPC classification number: G11B5/746 , G03F7/0002 , G11B5/855
Abstract: The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.
Abstract translation: 实施方案公开了一种方法，其包括使用第一定向自组装使用第一和第二图案在第一图案和第二图案中分层嵌段共聚物密度图案在不同区域中图案化模板基底以具有不同的密度，以使用第一 嵌段共聚物材料，并且使用第二定向自组装来使用第二嵌段共聚物材料在基材中图案化第二区域。
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10.发明授权公开(公告)号：US09269388B2
公开(公告)日：2016-02-23
申请号：US14673471
申请日：2015-03-30
Applicant: Seagate Technology LLC
Inventor： Shuaigang Xiao , XiaoMin Yang
IPC: G11B5/84 , B05D5/00 , B05D1/32 , B05D3/06 , B81C1/00 , B82Y10/00 , G11B5/74 , G11B5/82 , G11B5/855 , G11B5/596 , B05D3/00
CPC classification number: G11B5/84 , B05D1/322 , B05D3/00 , B05D3/06 , B05D5/00 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , G03F7/0002 , G11B5/59633 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855 , Y10T428/24802
Abstract: A substrate having an arrangement of self-assembling magnetic domains and a method of fabrication therefor. In some embodiments, a substrate is patterned with a plurality of chemically contrasted alignment features, and a block copolymer having a magnetic component and a non-magnetic component is deposited onto the substrate. The block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features. The period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.
Abstract translation: 具有自组装磁畴布置的基板及其制造方法。 在一些实施例中，用多个化学对比的对准特征图案化基底，并且将具有磁性成分和非磁性成分的嵌段共聚物沉积在基底上。 嵌段共聚物自组装成响应于对准特征的一系列磁畴。 对准特征的周期是磁畴周期的约2倍至约10倍。
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