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    Semiconductor device and manufacturing method thereof
    1.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US11908949B2

    公开(公告)日：2024-02-20

    申请号：US18077452

    申请日：2022-12-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Hata ,  Katsuaki Tochibayashi ,  Junpei Sugao ,  Shunpei Yamazaki

    IPC: H01L29/66 ,  H01L29/786 ,  H01L21/3115 ,  H10B12/00

    CPC classification number: H01L29/7869 ,  H01L21/31155 ,  H10B12/36

    Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150069383A1

    公开(公告)日：2015-03-12

    申请号：US14474450

    申请日：2014-09-02

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yasutaka Suzuki ,  Yuki Hata ,  Yoshinori Ieda

    IPC: H01L29/786 ,  H01L29/423 ,  H01L29/51

    CPC classification number: H01L29/51 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

    Abstract: A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.

    Abstract translation: 提供了包括小型化并具有良好电特性的氧化物半导体的半导体器件。 半导体器件包括氧化物半导体膜和阻挡膜; 与氧化物半导体膜电连接的源电极和漏电极; 与氧化物半导体膜，源电极和漏电极接触的栅极绝缘膜; 以及与栅极绝缘膜接触的栅电极。 阻挡膜含有与氧化物半导体膜相同的材料，与氧化物半导体膜在相同的表面上，并且具有比氧化物半导体膜更高的导电性。

    Semiconductor device and manufacturing method thereof
    4.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US11527657B2

    公开(公告)日：2022-12-13

    申请号：US16965052

    申请日：2019-02-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Hata ,  Katsuaki Tochibayashi ,  Junpei Sugao ,  Shunpei Yamazaki

    IPC: H01L29/78 ,  H01L29/786 ,  H01L21/3115 ,  H01L27/108

    Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09443880B2

    公开(公告)日：2016-09-13

    申请号：US14500445

    申请日：2014-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshihiko Saito ,  Yuki Hata ,  Kiyoshi Kato

    IPC: H01L27/12 ,  H01L27/115 ,  H01L49/02 ,  G11C16/04

    CPC classification number: H01L27/124 ,  G11C16/0433 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/40

    Abstract: An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.

    Abstract translation: 目的是使半导体器件小型化。 另一个目的是减小包括存储单元的半导体器件的驱动电路的面积。 半导体器件包括至少设置有第一半导体元件的元件形成层，设置在元件形成层上的第一布线，设置在第一布线上的中间膜，和与第一布线重叠的第二布线，设置有夹层膜 之间。 第一布线，层间膜和第二布线包括在第二半导体元件中。 第一布线和第二布线是提供相同电位的布线。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09112037B2

    公开(公告)日：2015-08-18

    申请号：US13758291

    申请日：2013-02-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Yuki Hata ,  Suguru Hondo

    IPC: H01L29/04 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423

    CPC classification number: H01L29/7869 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/0692 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78696

    Abstract: A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.

    Abstract translation: 提供一种包含氧化物半导体并具有良好操作特性的晶体管。 此外，通过使用晶体管，可以提供具有改善的操作特性的半导体。 在平面图中，晶体管的源极和漏极中的一个被环形栅电极包围。 此外，在平面图中，晶体管的源电极和漏电极之一被沟道形成区域包围。 因此，源电极通过在岛状氧化物半导体层的端部中产生的寄生沟道而不与漏电极电连接。

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