摘要:
There is provided a semiconductor light emitting diode (LED) chip including: a semiconductor light emitting diode unit including a light-transmissive substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on an upper surface of the light-transmissive substrate; a rear reflective laminate including an auxiliary optical layer formed on a lower surface of the light-transmissive substrate and made of a material having a predetermined refractive index and a metal reflective film formed on a lower surface of the auxiliary optical layer; and a bonding laminate provided on a lower surface of the rear reflective laminate and including a bonding metal layer made of a eutectic metal material and an anti-diffusion film formed to prevent diffusion of elements between the bonding metal layer and the metal reflective film.
摘要:
There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.
摘要:
A method of manufacturing a phosphor resin film and a phosphor resin film manufactured thereby are provided. The method of manufacturing a phosphor resin film includes preparing a polymer slurry by mixing a polymer resin and a latent curing agent in a solvent, spreading the polymer slurry such that it has a film shape, drying the spread polymer slurry to form a semi-hardened resin film, and providing phosphor powder to the semi-hardened resin film. A phosphor resin film includes semi-hardened resin film including a polymer resin and a latent curing agent and phosphors uniformly formed on one surface of the semi-hardened resin film.
摘要:
Embodiments of the disclosure relate to a ferritic alloy having excellent ability to withstand nuclear power plant accidents and a method of manufacturing a nuclear fuel cladding tube using the same. The alloy includes iron (Fe), aluminum (Al), chromium (Cr), and nickel (Ni). The nickel (Ni) may be included 0.5 to 10 wt % based on a total amount of the alloy. The chromium may be included 13 to 18 wt % based on the total amount of the alloy. The aluminum may be included 5 to 7 wt % based on the total amount of the alloy.
摘要:
The present invention relates to a process for preparation of aripiprazole crystal form II by recrystallizing aripiprazole in a mixture of acetone and 1-methoxy-2-propanol or a single solvent of 1-methoxy-2-propanol. The simple process according to the present invention can produce aripiprazole crystal form II with high purity and high yield in a mass scale.
摘要:
A resist resin composition includes 100 parts by weight of a copolymer represented by Formula 3 below; 0.5 to 1.5 parts by weight of a photoacid generator and 700 to 1,500 parts by weight of a solvent: wherein R1, R2, and R3 are each independently a C1-30 alkyl group, a C3-30 cycloalkyl group, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group, or an aldehyde group, R4, R5, and R6 are each independently hydrogen or a methyl group, and l, m, n, and o each independently refer to the number of repeating units in a main backbone and satisfy the conditions: l+m+n+o=1, 0≦l/(l+m+n+o)
摘要翻译:抗蚀剂树脂组合物包含100重量份由下式3表示的共聚物; 0.5〜1.5重量份的光酸产生剂和700〜1500重量份的溶剂:其中R1,R2和R3各自独立地为C1-30烷基,C3-30环烷基,醚基, 酯基,羰基,缩醛基,环氧基,腈基或醛基,R 4,R 5和R 6各自独立地为氢或甲基,l,m,n和o各自独立地为 是指主骨架中的重复单元数,满足条件:l + m + n + o = 1,0&nlE; l /(1 + m + n + o)<0.4,0
摘要:
The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.
摘要:
In an apparatus for producing U3O8 powder, the apparatus has an oxidation reactor including an interior space, a scrap box loaded with UO2 sintered pellets to be oxidized and introduced into the interior space of the oxidation reactor, an impact generating unit applying an impact to the scrap box to dissipate heat generated by the oxidation of the UO2 sintered pellets in the oxidation reactor, and a control unit controlling an oxidation process. The apparatus for producing U3O8 powder allows the heat generated by the oxidation of the UO2 sintered pellets in the oxidation reactor to be uniformly dissipated by the impact generating unit, thus producing U3O8 powder having a larger specific surface area which can be used to obtain a sintered UO2 pellet with a larger and more stable grain size of increased quality.
摘要:
Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.
摘要:
Disclosed is a thyroid uptake measurement apparatus, in which a radiation attenuation filter is detachably provided at the leading end of a collimator of a radiation detector. The radiation attenuation filter inhibits the saturation of signals when gamma rays exceeding the maximum counting rate are entered. Accordingly, it is possible to inhibit the distortion of signals when the pile-up of the signals increases by an increase in the radiation decay. Moreover, the use of the radiation attenuation filter can significantly improve the scatter fraction, that is, the ratio of scattered radiation/total radiation generated by material scatter of radiation.