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    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE USING THE SAME 失效
    半导体发光二极管芯片和发光器件使用它

    公开(公告)号：US20120286309A1

    公开(公告)日：2012-11-15

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/46

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

    Semiconductor light emitting diode chip and light emitting device using the same
    4.
    发明授权
    Semiconductor light emitting diode chip and light emitting device using the same 失效
    半导体发光二极管芯片和发光装置使用相同

    公开(公告)号：US08487334B2

    公开(公告)日：2013-07-16

    申请号：US13279782

    申请日：2011-10-24

    申请人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    发明人： Seung Wan Chae ,  Tae Hun Kim ,  Su Yeol Lee ,  Sung Tae Kim ,  Jong Ho Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/20

    摘要： A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

    摘要翻译： 一种半导体发光器件包括：发光二极管单元，其包括具有在其下边缘向上倾斜的面的透光基板。 背光层叠体形成在透光性基板的下表面和周边的倾斜面上。 后反光层叠体包括光辅助层和形成在光辅助层的下表面上的金属反射膜。 在后反光层叠体的下表面设置有结层叠体。 结合层叠体包括由共晶金属材料制成的结金属层和扩散阻挡膜。

    SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 审中-公开
    半导体发光器件封装

    公开(公告)号：US20130002139A1

    公开(公告)日：2013-01-03

    申请号：US13536338

    申请日：2012-06-28

    申请人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

    发明人： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

    IPC分类号： H05B37/02

    CPC分类号： H01L25/167 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

    摘要： There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source.

    摘要翻译： 提供了一种半导体发光器件封装，包括：具有与其相对的第一主表面和第二主表面的半导体衬底; 设置在所述半导体基板的第一主面侧的光源; 设置在所述半导体基板的第二主面上的多个电极焊盘; 从所述多个电极焊盘延伸并穿透所述半导体衬底的导电通孔; 以及驱动电路单元，其包括通过由p型区域和n型区域形成的pn结获得的多个二极管，并且电连接到导电通孔和光源。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    6.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
    半导体发光元件

    公开(公告)号：US20140231859A1

    公开(公告)日：2014-08-21

    申请号：US14236582

    申请日：2011-08-01

    申请人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

    发明人： Jae Yoon Kim ,  Seok Min Hwang ,  Su Yeol Lee ,  Seung Wan Chae ,  Jae Ho Han ,  Jin Bock Lee

    IPC分类号： H01L33/38 ,  H01L33/62 ,  H01L33/32

    CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.

    摘要翻译： 半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。 第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。 第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。 第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

    Light emitting device package and fabrication method thereof
    7.
    发明授权
    Light emitting device package and fabrication method thereof 有权
    发光器件封装及其制造方法

    公开(公告)号：US08829548B2

    公开(公告)日：2014-09-09

    申请号：US13554026

    申请日：2012-07-20

    申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

    发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

    IPC分类号： H01L33/00

    CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

    摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

    摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

    LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF
    8.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF 有权
    发光器件封装及其制造方法

    公开(公告)号：US20130020598A1

    公开(公告)日：2013-01-24

    申请号：US13554026

    申请日：2012-07-20

    申请人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

    发明人： Jong In Yang ,  Sung Tae Kim ,  Yong Il Kim ,  Su Yeol Lee ,  Seung Wan Chae ,  Hyung Duk Ko ,  Yung Ho Ryu

    IPC分类号： H01L33/50 ,  H01L33/62

    CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

    摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

    摘要翻译： 发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

    WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    WAVELENGTH CONVERSION CHIP FOR A LIGHT EMITTING DIODE, AND METHOD FOR MANUFACTURING SAME 审中-公开
    用于发光二极管的波长转换芯片及其制造方法

    公开(公告)号：US20140198528A1

    公开(公告)日：2014-07-17

    申请号：US14239100

    申请日：2011-08-17

    申请人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

    发明人： Yong Tae KIim ,  Tomio Inoue ,  Je Won Kim ,  Tsuyoshi Tsutsui ,  Jong Ho Lee ,  Seung Wan Chae

    IPC分类号： H01L33/50 ,  F21V8/00

    CPC分类号： G02B6/0073 ,  H01L33/486 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

    摘要： There is provided a method of manufacturing a wavelength converted LED chip, including attaching a plurality of LED chips to a chip alignment region of an upper surface of a temporary support plate, forming a conductive bump on the electrode of the respective LED chips, forming a phosphor-containing resin encapsulation part in the chip alignment region to cover the conductive bump, polishing the phosphor containing resin encapsulation part, forming the wavelength converted LED chips by cutting the provided phosphor containing resin encapsulation part between the LED chips, the wavelength converted LED chip including a wavelength conversion layer obtained from the phosphor containing resin encapsulation part and formed on lateral surfaces and an upper surface of the wavelength converted LED chip, and removing the temporary support plate from the wavelength converted LED chip.

    摘要翻译： 提供一种制造波长转换LED芯片的方法，包括将多个LED芯片附接到临时支撑板的上表面的芯片对准区域，在各个LED芯片的电极上形成导电凸块，形成 含磷光体的树脂封装部分在芯片取向区域中覆盖导电凸块，抛光含荧光体的树脂封装部分，通过在LED芯片之间切割提供的含磷树脂封装部分，形成波长转换的LED芯片，波长转换的LED芯片 包括由含荧光体的树脂封装部分形成的波长转换层，并形成在波长转换的LED芯片的侧面和上表面上，并从波长转换的LED芯片上去除临时支撑板。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY
    10.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY 审中-公开
    制造半导体发光元件和制造半导体发光元件的方法

    公开(公告)号：US20140183589A1

    公开(公告)日：2014-07-03

    申请号：US14237515

    申请日：2011-08-09

    申请人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

    发明人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

    IPC分类号： H01L33/00 ,  H01L33/60

    CPC分类号： H01L33/005 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/60

    摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

    摘要翻译： 提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。 根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构 所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。