公开(公告)号：US08624316B2

公开(公告)日：2014-01-07

申请号：US13227882

申请日：2011-09-08

申请人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

发明人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

IPC分类号： H01L29/792

CPC分类号： H01L21/28282 ,  H01L27/11582 ,  H01L29/42352

摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.

摘要翻译： 根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱， 设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层， 面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

公开(公告)号：US08476708B2

公开(公告)日：2013-07-02

申请号：US13346888

申请日：2012-01-10

申请人： Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Masaru Kito ,  Kiyotaka Miyano ,  Shinji Mori ,  Ichiro Mizushima

发明人： Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Masaru Kito ,  Kiyotaka Miyano ,  Shinji Mori ,  Ichiro Mizushima

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/792

CPC分类号： H01L27/11582 ,  H01L27/0688 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/1207

摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.

摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，存储单元阵列部分，单晶半导体层和电路部分。 存储单元阵列部分形成在半导体衬底上，并且包括存储单元。 半导体层形成在存储单元阵列部分上，并且通过形成在延伸穿过存储单元阵列部分的孔中而连接到半导体衬底。 电路部分形成在半导体层上。 半导体层的下部的Ge浓度高于半导体层的上部的Ge浓度。

公开(公告)号：US08415242B2

公开(公告)日：2013-04-09

申请号：US12886135

申请日：2010-09-20

申请人： Ichiro Mizushima ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

发明人： Ichiro Mizushima ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

IPC分类号： H01L21/3205

CPC分类号： H01L29/792 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.

公开(公告)号：US08307935B2

公开(公告)日：2012-11-13

申请号：US12864365

申请日：2009-01-22

申请人： Hiroyuki Takahashi ,  Hitoshi Yuasa ,  Yukio Nakagawa ,  Kazuyuki Yoshiyama ,  Shigeyuki Suzuki ,  Takeki Hayashi ,  Hajime Kitte ,  Masashi Aoki ,  Toshikatsu Togawa ,  Toshinobu Tsuboi ,  Shinji Mori

发明人： Hiroyuki Takahashi ,  Hitoshi Yuasa ,  Yukio Nakagawa ,  Kazuyuki Yoshiyama ,  Shigeyuki Suzuki ,  Takeki Hayashi ,  Hajime Kitte ,  Masashi Aoki ,  Toshikatsu Togawa ,  Toshinobu Tsuboi ,  Shinji Mori

IPC分类号： B60R21/34

CPC分类号： B60R21/38 ,  B60R2021/343 ,  B62D25/12

摘要： In a vehicle pop-up hood apparatus in which a rod is extended and a hood is pushed up by the operation of an actuator at a time of collision with a collision body, collision energy is absorbed with high efficiency when a collision load of a predetermined value or greater is input to an area near a hood pushed up position.Actuator (18) operates such that rod (20) moves in an axial direction toward a hood upper side, pushes up a rear edge side of hood rocker (12) and holds it at that position and, in that state, when a collision load of a predetermined value or greater acts from a hood upper side to near the pushed up position of the hood, push portion (54) slides along pushed up surface (38) of hinge arm (30) towards a vehicle rear side, and rod (20) is made to bend in conjunction therewith.

摘要翻译： 在与碰撞体碰撞时通过致动器的操作而使杆伸长并且将发动机罩向上推动的车辆弹出式发动机罩中，当预定的碰撞载荷发生碰撞时，碰撞能量被高效地吸收 值或更大值被输入到靠近发动机罩推动位置的区域。 致动器（18）的操作使得杆（20）沿轴向朝向发动机罩上侧移动，将发动机摇臂（12）的后边缘侧推起并将其保持在该位置，并且在该状态下，当碰撞载荷 预定值以上的动作从发动机罩上侧到靠近罩的上推位置，推动部（54）沿铰链臂（30）的推压面（38）朝向车辆后方滑动，并且杆 20）与其一起弯曲。

公开(公告)号：US20110233646A1

公开(公告)日：2011-09-29

申请号：US12886135

申请日：2010-09-20

申请人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

发明人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/792 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.

摘要翻译： 根据一个实施例，提供了一种非易失性半导体存储器件，其中通过在柱状半导体膜的高度方向上经由电荷存储层提供在柱状半导体膜的侧面上具有栅电极膜的多个晶体管形成的存储器串， 基本上垂直地以矩阵形式布置在基底上。 提供了一种由半导体材料制成的耦合部分，其连接形成在预定方向上彼此相邻的一对存储器串的柱状半导体膜的下部。 每个柱状半导体膜由大致单晶状锗膜或硅锗膜形成。

公开(公告)号：US08013398B2

公开(公告)日：2011-09-06

申请号：US12056909

申请日：2008-03-27

申请人： Shinji Mori ,  Tsutomu Sato ,  Koji Matsuo

发明人： Shinji Mori ,  Tsutomu Sato ,  Koji Matsuo

IPC分类号： H01L29/78

CPC分类号： H01L29/772 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.

摘要翻译： 半导体器件包括具有Si沟道的第一pMISFET区，具有Si沟道的第二pMISFET区和具有Si沟道的nMISFET区。 将第一压缩应变施加到Si沟道的第一SiGe层嵌入并形成在第一pMISFET区域中以夹持其Si沟道，并且将施加与第一压缩应变不同的第二压缩应变的第二SiGe层嵌入并形成 在第二pMISFET区域夹持其Si通道。

公开(公告)号：US07506832B2

公开(公告)日：2009-03-24

申请号：US11103514

申请日：2005-04-12

申请人： Shinji Mori

发明人： Shinji Mori

IPC分类号： B60R22/46

CPC分类号： B60R22/44 ,  B60R22/46 ,  B60R2022/4466 ,  B60R2022/4666

摘要： A motorized retractor which includes a spool with a webbing wound therearound, a reversible motor, a forward and a reverse driving force transmission mechanisms. The forward and the reverse driving force transmission mechanisms are provided between the spool and an output shaft of the motor, respectively. The forward driving force transmission mechanism reduces forward rotation of the output shaft by a predetermined reduction ratio and transmits this rotation to the spool for rotating the spool in a winding direction. The reverse driving force transmission mechanism reduces reverse direction rotation of the output shaft by a reduction ratio which is lower than the predetermined reduction ratio of the forward driving force transmission mechanism, and transmits this rotation to the spool for rotating the spool in the winding direction. The forward and the reverse driving force transmission mechanisms both block transmission to the output shaft of rotations generated at the spool side.

摘要翻译： 一种电动牵开器，其包括绕其周围的织带的卷轴，可逆电动机，前进和后退驱动力传递机构。 前后驱动力传递机构分别设置在卷轴和马达的输出轴之间。 前进驱动力传递机构使输出轴的向前旋转减小预定的减速比，并将该旋转传递到卷轴，以沿着卷绕方向旋转卷轴。 反向驱动力传递机构通过比正向驱动力传递机构的预定减速比低的减速比来减小输出轴的反向旋转，并且将该旋转传递到卷轴以沿着卷绕方向旋转。 前进驱动力和反向驱动力传递机构都阻止在卷轴侧产生的旋转输出轴的传动。

公开(公告)号：US20070062802A1

公开(公告)日：2007-03-22

申请号：US11516773

申请日：2006-09-07

申请人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

发明人： Katsuyuki Sekine ,  Shinji Mori ,  Takashi Shimizu

IPC分类号： H05F3/00 ,  C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C25B9/00

CPC分类号： H01J37/32183 ,  H01J37/32935

摘要： A system for managing a plasma processing apparatus includes an impedance matching tool for matching impedance in a transmission line feeding a high frequency wave generating a plasma into a processing chamber; a collection unit collecting time series data of an adjustment parameter of the impedance matching tool; a reference creation module creating management reference data by reference time series data of the adjustment parameter, the reference time series data collected from a reference plasma process against a reference substrate; an initialization module initializing the adjustment parameter for a target plasma process against a target substrate; a recording module recording target time series data of the adjustment parameter adjusted so as to minimize a reflection wave of the high frequency wave in the target plasma process; and a determination module determining an abnormality of the target plasma process by comparing the target time series data with the management reference data.

摘要翻译： 用于管理等离子体处理装置的系统包括阻抗匹配工具，用于将产生等离子体的高频波馈送到处理室的传输线中的阻抗匹配; 收集单元，收集阻抗匹配工具的调整参数的时间序列数据; 参考创建模块，通过调整参数的参考时间序列数据创建管理参考数据，从参考等离子体处理相对于参考基板收集的参考时间序列数据; 初始化模块将目标等离子体处理的调整参数初始化为目标衬底; 记录模块记录调整参数的目标时间序列数据，以便在目标等离子体处理中使高频波的反射波最小化; 以及确定模块，通过将目标时间序列数据与管理参考数据进行比较来确定目标等离子体处理的异常。

公开(公告)号：US20070051841A1

公开(公告)日：2007-03-08

申请号：US11515936

申请日：2006-09-06

申请人： Shinji Mori

发明人： Shinji Mori

IPC分类号： B60R22/46

CPC分类号： B60R22/46 ,  B60R2022/4666 ,  B60R2022/4685

摘要： In a motorized retractor, due to an ECU and a driver switching a speed of rotation of an output shaft of a motor to a first speed or a second speed, a transfer path of rotational force from the motor to a spool is switched to a first driving force transferring section (a path through a meshing clutch and a slip mechanism) or a second driving force transferring section (a path through an overload mechanism and a centrifugal clutch). Accordingly, there is no need for a complex switching mechanism including a solenoid which is employed in conventional motorized retractors. A device can thereby be made more compact.

摘要翻译： 在电动牵开器中，由于ECU和驱动器将马达的输出轴的旋转速度切换到第一速度或第二速度，从马达到卷轴的旋转力传递路径被切换到第一 驱动力传递部（通过啮合离合器和滑动机构的路径）或第二驱动力传递部（通过过载机构和离心式离合器的路径）。 因此，不需要复杂的切换机构，包括用于常规电动牵开器中的螺线管。 从而可以使装置更紧凑。

公开(公告)号：US20070026149A1

公开(公告)日：2007-02-01

申请号：US11494735

申请日：2006-07-28

申请人： Takashi Shimizu ,  Kazuo Saki ,  Kazuhiro Nishiki ,  Akihito Yamamoto ,  Shinji Mori

发明人： Takashi Shimizu ,  Kazuo Saki ,  Kazuhiro Nishiki ,  Akihito Yamamoto ,  Shinji Mori

IPC分类号： C23C16/00

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/3144 ,  H01L22/20

摘要： In a process of annealing an insulating film such as a silicon oxide film (SiO2) or a silicon oxynitride film (SiON) provided in a processing chamber 6 within an atmosphere of an inert gas 2 guided from a first mass flow controller 3 via a gas inlet 7, an amount of SiO sublimated from the surface of the insulating film in the processing chamber 6 is measured by a mass spectrometer 10, and an amount of oxygen gas 4 guided to the processing chamber 6 from a second mass flow controller 5 is controlled by a controller 1 so that the SiO concentration does not exceed a predetermined level, thereby effectively controlling the SiO sublimation. As a result, the film deterioration caused by the SiO sublimation is prevented and an insulating film having a high reliability and good characteristics can be formed in a controllable manner.

摘要翻译： 在将惰性气体2的气氛2中引导的处理室6中设置的氧化硅膜（SiO 2/2）或氧氮化硅膜（SiON）等绝缘膜退火的工序中， 通过气体入口7的第一质量流量控制器3，通过质谱仪10测量从处理室6中的绝缘膜的表面升华的SiO的量，并且从处理室6中引导到处理室6的量的氧气 第二质量流量控制器5由控制器1控制，使得SiO浓度不超过预定水平，从而有效地控制SiO升华。 结果，防止了由SiO升华引起的膜劣化，并且可以以可控的方式形成具有高可靠性和良好特性的绝缘膜。