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公开(公告)号：US20080182344A1
公开(公告)日：2008-07-31
申请号：US11699926
申请日：2007-01-30
IPC分类号： H01L21/66
CPC分类号： G01B21/32
摘要： A method and system determines deformations in a substrate in the manufacturing of semiconductor devices. At least one property of vertical deformations of the substrate is measured at a plurality of locations on the substrate. Afterward, an automatic computation of horizontal deformations is determined based on the measured properties of vertical deformations with a model for the deformation behavior of the substrate.
摘要翻译： 一种方法和系统在半导体器件的制造中确定衬底中的变形。 在衬底上的多个位置处测量衬底的垂直变形的至少一个特性。 之后，基于垂直变形的测量属性，用基板的变形行为的模型来确定水平变形的自动计算。
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公开(公告)号：US20090204936A1
公开(公告)日：2009-08-13
申请号：US12029280
申请日：2008-02-11
申请人： Werner Jacobs , Alfred Kersch , Christof Bodendorf
发明人： Werner Jacobs , Alfred Kersch , Christof Bodendorf
IPC分类号： G06F17/50
摘要： A method of performing proximity correction of a mask layout is used during the generation of a masking structure for performing a processing step. The masking structure includes at least one opening that is delimited by a sidewall and that exposes an area that is to be processed. The method includes the steps of a) determining a value representing a flux of particles to a target portion, wherein the target portion is at least one of the group of a portion of the sidewall and a portion of the uncovered area and wherein the particles are generated during the processing of the area; and b) determining a corrected mask layout dependent on the value determined in step a).
摘要翻译： 在生成用于执行处理步骤的掩蔽结构期间，使用执行掩模布局的邻近度校正的方法。 掩模结构包括至少一个开口，该开口由侧壁界定并且暴露要被处理的区域。 该方法包括以下步骤：a）确定表示到目标部分的颗粒通量的值，其中目标部分是侧壁的一部分和未覆盖区域的一部分中的至少一个，并且其中颗粒是 在该地区的加工过程中产生的; 以及b）根据步骤a）中确定的值来确定校正的掩模布局。
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3.发明申请公开(公告)号：US20070269598A1
公开(公告)日：2007-11-22
申请号：US11750073
申请日：2007-05-17
申请人： Alfred Kersch , Angela Link , Jonas Sundqvist , Elke Erben
发明人： Alfred Kersch , Angela Link , Jonas Sundqvist , Elke Erben
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/08
摘要： A method and apparatus for providing a gaseous precursor for a coating process. A starting material having a pulverulent precursor material is heated in order to cause a vaporization of the pulverulent precursor material, whereby a gaseous precursor is produced. A carrier gas is flowed past the starting material at a distance minimizing or preventing a convective gas flow, while transporting the gaseous precursor to a processing region containing a wafer to be coated.
摘要翻译： 一种用于提供涂覆工艺的气态前体的方法和装置。 加热具有粉状前体材料的起始材料，以便引起粉状前体材料的汽化，由此产生气态前体。 在将气态前体输送到包含待涂覆的晶片的处理区域的同时，载气以一定距离流过原料，使其最小化或防止对流气体流动。
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公开(公告)号：US20050250344A1
公开(公告)日：2005-11-10
申请号：US11112743
申请日：2005-04-22
IPC分类号： H01F41/30 , H01F41/34 , H01L21/00 , H01L21/31 , H01L21/336 , H01L21/469
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/265 , H01F41/30 , H01F41/308 , H01F41/34
摘要： An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (α) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).
摘要翻译： 环形微结构元件，特别是环形布置的单层或多层薄膜，形成在衬底（S）上，例如用于磁阻存储器中。 为此，在衬底上施加掩模层。 将开口（C）蚀刻到掩模层中，使得表面的部分区域不被覆盖。 蚀刻操作以使得开口（C）形成有突出部（B）的方式进行。 突出部分至少部分地遮蔽未被覆盖的表面与入射的粒子束（TS）。 粒子束（TS）以倾斜角（α）入射到基底（S）。 在这种情况下，基板（S）相对于定向粒子束（TS）旋转。 为了形成孔状微结构元件（R），从粒子束中，材料环状地沉积在未覆盖的表面上。
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公开(公告)号：US06579758B2
公开(公告)日：2003-06-17
申请号：US10186656
申请日：2002-07-01
申请人： Bernd Göbel , Martin Gutsche , Alfred Kersch , Werner Steinhögl
发明人： Bernd Göbel , Martin Gutsche , Alfred Kersch , Werner Steinhögl
IPC分类号： H01L218242
CPC分类号： H01L27/10867 , H01L21/32139
摘要： Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.
摘要翻译： 在深沟槽结构中的一侧产生埋管带。 PVD工艺用于在一定角度倾斜的凹槽中沉积掩模材料。 结果，在凹陷的基部区域的一侧上的掩埋带上产生掩蔽楔。 在随后的各向异性蚀刻步骤期间，掩模楔用作掩模，其相对于掩模楔选择性地执行，用于在一侧上移除掩埋带。
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公开(公告)号：US06524448B2
公开(公告)日：2003-02-25
申请号：US09832988
申请日：2001-04-11
IPC分类号： C23C1435
CPC分类号： H01J37/32623 , C23C14/351 , C23C16/50 , H01J37/3266
摘要： The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried away from a sputter target (21), through the plasma (2) towards a substrate (3), using an electrical field. In the process chamber (1), between the plasma (2) and the substrate (3) a magnetic field component (6) is produced by that is situated parallel to a substrate surface (5). Through the magnetic field component (6), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.
摘要翻译： 本发明涉及一种用于执行等离子体溅射方法的系统，例如PVD（物理气相沉积）方法。 在处理室（1）中，产生等离子体（2），以便使用电场将离子化的颗粒从溅射靶（21）传送通过等离子体（2）朝基板（3）移动。 在处理室（1）中，在等离子体（2）和衬底（3）之间，通过平行于衬底表面（5）的方式制造磁场分量（6）。 通过磁场分量（6），电离粒子的角分布从垂直于衬底表面的飞行路径偏转，从而产生具有较大角度散射的冲击角。
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公开(公告)号：US06458603B1
公开(公告)日：2002-10-01
申请号：US09974938
申请日：2001-10-10
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： The invention relates to a method for fabricating in particular a TMR element for use in a MRAM, wherein a mask is arranged on a substrate and structured in such a manner that it shadows but does not cover a surface region of the substrate, and wherein material of the structure which is to be fabricated is then deposited on the substrate in a directed deposition process. The invention also relates to a component with a micro-technical structure which has been fabricated in this manner.
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公开(公告)号：US20070161180A1
公开(公告)日：2007-07-12
申请号：US11331441
申请日：2006-01-13
申请人： Elke Erben , Stefan Jakschik , Alfred Kersch , Angela Link , Jonas Sundqvist
发明人： Elke Erben , Stefan Jakschik , Alfred Kersch , Angela Link , Jonas Sundqvist
IPC分类号： H01L21/8242
CPC分类号： C23C16/45531 , C23C16/34 , C23C16/45525 , H01L21/3141 , H01L21/318 , H01L28/40
摘要： The atomic layer deposition process according to the invention provides the following steps for the production of homogeneous layers on a substrate. The substrate is introduced into a reaction chamber. A first precursor is introduced into the reaction chamber, which first precursor reacts on the surface of the substrate to form an intermediate product. A second precursor is introduced into the reaction chamber, which second precursor has a low sticking coefficient and reacts with part of the intermediate product to form a first product. A third precursor is introduced into the reaction chamber, which third precursor has a high sticking coefficient and reacts with the remaining part of the intermediate product to form a second product. The second precursor and its first product reduce the effective sticking coefficient of the third precursor by partially covering the surface.
摘要翻译： 根据本发明的原子层沉积方法提供了在基底上生产均质层的以下步骤。 将基底引入反应室。 将第一前体引入反应室，其中第一前体在基材的表面上反应形成中间产物。 将第二前体引入反应室，该第二前体具有低粘附系数并与部分中间产物反应以形成第一产物。 将第三前体引入反应室，该第三前体具有高粘附系数并与中间产物的剩余部分反应以形成第二产物。 第二种前体及其第一种产物通过部分覆盖表面来降低第三种前体的有效粘附系数。
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公开(公告)号：US07022209B2
公开(公告)日：2006-04-04
申请号：US10620570
申请日：2003-07-16
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.
摘要翻译： PVD方法和PVD装置使用旋转磁场来提高产量。 磁场被设置为使得其至少在平均时间内在PVD设备的目标区域的扇区中的磁场的旋转轴之外基本上消失。 以这种方式，PVD方法和PVD装置实现均匀的涂层。
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10.发明授权Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it 失效具有包括垂直选择晶体管的存储单元的半导体存储器及其制造方法公开(公告)号：US06977405B2
公开(公告)日：2005-12-20
申请号：US10792742
申请日：2004-03-05
申请人： Jörn Lützen , Bernd Goebel , Dirk Schumann , Martin Gutsche , Harald Seidl , Martin Popp , Alfred Kersch , Werner Steinhögl
发明人： Jörn Lützen , Bernd Goebel , Dirk Schumann , Martin Gutsche , Harald Seidl , Martin Popp , Alfred Kersch , Werner Steinhögl
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L27/10841 , H01L27/10867 , H01L27/10891
摘要： In order to fabricate a semiconductor memory, a trench capacitor is arranged in a first trench. Beside the first trench, a first longitudinal trench and, parallel on the other side of the first trench, a second longitudinal trench are arranged in the substrate. A first spacer word line is arranged in the first longitudinal trench and a second spacer word line is arranged in the second longitudinal trench. There are arranged in the first trench connecting webs between the first spacer word line and the second spacer word line which have a thickness which, in the direction of the first spacer word line, is less than half the width of the first trench in the direction of the first spacer word line.
摘要翻译： 为了制造半导体存储器，在第一沟槽中布置有沟槽电容器。 在第一沟槽的旁边，在衬底中布置有第一纵向沟槽，并且在第一沟槽的另一侧平行的第二纵向沟槽。 第一间隔字线布置在第一纵向沟槽中，第二间隔字线布置在第二纵向沟槽中。 布置在第一沟槽中，连接腹板之间的第一隔离物字线和第二隔离物字线之间的厚度，该厚度在第一隔离物字线的方向上小于第一沟槽的方向上的宽度的一半 的第一个间隔字线。
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