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    Micro Light Emitting Diode
    5.
    发明申请
    Micro Light Emitting Diode 审中-公开

    公开(公告)号：US20200020825A1

    公开(公告)日：2020-01-16

    申请号：US16447050

    申请日：2019-06-20

    Applicant: Long Yang ,  Chao-Kun Lin

    Inventor： Long Yang ,  Chao-Kun Lin

    IPC: H01L33/00 ,  H01L25/075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/16 ,  H01L33/62 ,  H01L33/40 ,  H01L33/30

    Abstract: Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.

    Light emitting devices having light coupling layers
    6.
    发明授权
    Light emitting devices having light coupling layers 有权
    具有光耦合层的发光器件

    公开(公告)号：US09012921B2

    公开(公告)日：2015-04-21

    申请号：US13249184

    申请日：2011-09-29

    Applicant: Chao-Kun Lin ,  Li Yan ,  Chih-Wei Chuang

    Inventor： Chao-Kun Lin ,  Li Yan ,  Chih-Wei Chuang

    IPC: H01L33/32 ,  H01L33/22 ,  H01L33/00

    CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L2924/00 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0058

    Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.

    Abstract translation: 发光器件包括n型半导体材料的第一层，p型半导体材料的第二层和在第一层和第二层之间的有源层。 光耦合层设置成与第一层和第二层中的一个相邻。 在一些情况下，通过使发光器件的缓冲层粗糙化来形成光耦合层。 发光器件包括通过光耦合层的一部分与第一层和第二层之一电连通的电极。

    Distributed current blocking structures for light emitting diodes
    7.
    发明授权
    Distributed current blocking structures for light emitting diodes 有权

    公开(公告)号：US08564010B2

    公开(公告)日：2013-10-22

    申请号：US13198664

    申请日：2011-08-04

    Applicant: Chih-Wei Chuang ,  Chao-Kun Lin

    Inventor： Chih-Wei Chuang ,  Chao-Kun Lin

    IPC: H01L33/14 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

    Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

    LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME 有权
    具有高光提取的发光二极管芯片及其制造方法

    公开(公告)号：US20100136728A1

    公开(公告)日：2010-06-03

    申请号：US12701336

    申请日：2010-02-05

    Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

    Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

    IPC: H01L33/46 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/44

    Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

    Abstract translation: 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

    System and method for low loss waveguide bends
    10.
    发明申请
    System and method for low loss waveguide bends 有权
    低损耗波导弯曲的系统和方法

    公开(公告)号：US20060182399A1

    公开(公告)日：2006-08-17

    申请号：US11060338

    申请日：2005-02-17

    Applicant: Chao-Kun Lin ,  Kostadin Djordjev ,  Michael Tan

    Inventor： Chao-Kun Lin ,  Kostadin Djordjev ,  Michael Tan

    IPC: G02B6/10

    CPC classification number: G02B6/122 ,  G02B2006/12104 ,  G02B2006/12119

    Abstract: In one embodiment, there is disclosed a waveguide medium using total internal reflection to create a relatively sharp (approximately 90°) bend for optical signals traversing the waveguide. A discontinuity of the medium (such as air) is used to create a turning mirror within the waveguide path. By curving the discontinuity, the entire input optical signal is focused into the output portion of the waveguide, thereby compensating for the diffraction loss of the optical signal at the bend. In one embodiment in order to facilitate proper alignment of the masks certain portions of the waveguide on a first mask are extended (widened) beyond their optimum physical size. This extended portion is then used to position an edge of a second mask, such that optical signal scatter caused by the extended portions of the waveguide are compensated for by adjusting the curvature.

    Abstract translation: 在一个实施例中，公开了使用全内反射以对穿过波导的光信号产生相对尖锐（大约90°）弯曲的波导介质。 介质（如空气）的不连续性用于在波导路径内产生转向镜。 通过弯曲不连续性，整个输入光信号被聚焦到波导的输出部分，从而补偿弯曲处的光信号的衍射损耗。 在一个实施例中，为了促进掩模的正确对准，第一掩模上的波导的某些部分被延伸（加宽）超过其最佳物理尺寸。 然后，该扩展部分用于定位第二掩模的边缘，使得由波导的延伸部分引起的光信号散射通过调整曲率来补偿。

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