DEVICE WITH ISOLATION BARRIER AND FAULT DETECTION

    公开(公告)号:US20200096574A1

    公开(公告)日:2020-03-26

    申请号:US16137146

    申请日:2018-09-20

    Abstract: A device that comprises a first semiconductor die and a second semiconductor die. The first semiconductor die comprises a first clock signal generator. The second semiconductor die comprises a fault detection circuit, the fault detection circuit comprising a second clock signal generator, a first counter coupled to the second clock signal generator, multiple storage devices coupled to the second clock signal generator and to the first counter, a logic gate coupled to the multiple storage devices, a second counter coupled to the logic gate and to the first clock signal generator, and a comparator coupled to the logic gate and the second counter.

    IC WITH THIN FILM RESISTOR WITH METAL WALLS
    6.
    发明申请

    公开(公告)号:US20200381358A1

    公开(公告)日:2020-12-03

    申请号:US16995288

    申请日:2020-08-17

    Abstract: An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.

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