公开(公告)号：US20220351987A1

公开(公告)日：2022-11-03

申请号：US17813369

申请日：2022-07-19

Applicant: Tokyo Electron Limited

Inventor： Yuji Mimura ,  Hiroshi Maeda ,  Satoshi Nishimura

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/66 ,  G06T7/00 ,  H01L21/18 ,  H01J37/32 ,  B32B37/00 ,  H01J9/48 ,  B24B7/00 ,  H01J37/36 ,  B24D3/00

Abstract: A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

公开(公告)号：US20200294824A1

公开(公告)日：2020-09-17

申请号：US16813952

申请日：2020-03-10

Applicant: Tokyo Electron Limited

Inventor： Yuji Mimura ,  Hiroshi Maeda ,  Satoshi Nishimura

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/18 ,  H01L21/66 ,  G06T7/00

Abstract: A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

公开(公告)号：US11626302B2

公开(公告)日：2023-04-11

申请号：US17813369

申请日：2022-07-19

Applicant: Tokyo Electron Limited

Inventor： Yuji Mimura ,  Hiroshi Maeda ,  Satoshi Nishimura

IPC: H01J9/48 ,  H01L21/67 ,  H01J37/36 ,  H01L21/304 ,  H01L21/66 ,  G06T7/00 ,  H01L21/18 ,  H01J37/32 ,  B32B37/00 ,  B24B7/00 ,  B24D3/00

Abstract: A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

公开(公告)号：US11315789B2

公开(公告)日：2022-04-26

申请号：US16573775

申请日：2019-09-17

Applicant: Tokyo Electron Limited

Inventor： Kiyotaka Imai ,  Hirokazu Aizawa ,  Hiroshi Maeda ,  Kaoru Maekawa ,  Yuji Mimura ,  Harunobu Suenaga

IPC: H01L21/20 ,  H01L21/50

Abstract: Described herein is a method of bonding and/or debonding substrates. In one embodiment, at least one of the surfaces of the substrates to be bonded is comprised of an oxide. In one embodiment, the surfaces of both substrates comprise an oxide. A wet etch may then be utilized to debond the substrates by etching away the layers that have been bonded. In one embodiment, a fusion bonding process is utilized to bond two substrates, at least one substrate having a silicon oxide surface. In one exemplary etch, a dilute hydrofluoric (DHF) etch is utilized to etch the bonded silicon oxide surface, allowing for two bonded substrates to be debonded. In another embodiment, the silicon oxide may be a low density silicon oxide. In one embodiment, both substrates may have a surface layer of the low density silicon oxide which may be fusion bonded together.

公开(公告)号：US09741595B2

公开(公告)日：2017-08-22

申请号：US14950281

申请日：2015-11-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji Sugakawa ,  Yuji Mimura ,  Shuhei Matsumoto ,  Takahiro Masunaga ,  Makoto Tsukishima

IPC: H01L21/67 ,  H01L21/66 ,  H01L23/00 ,  H01L21/68 ,  H01L21/822

CPC classification number: H01L21/67248 ,  H01L21/67092 ,  H01L21/681 ,  H01L21/8221 ,  H01L22/12 ,  H01L22/20 ,  H01L24/08 ,  H01L24/75 ,  H01L24/80 ,  H01L24/94 ,  H01L2224/08145 ,  H01L2224/7501 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75601 ,  H01L2224/7565 ,  H01L2224/75702 ,  H01L2224/75704 ,  H01L2224/75705 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75822 ,  H01L2224/75823 ,  H01L2224/75824 ,  H01L2224/759 ,  H01L2224/75981 ,  H01L2224/80003 ,  H01L2224/80013 ,  H01L2224/80048 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80201 ,  H01L2224/80894 ,  H01L2224/80908 ,  H01L2224/83201 ,  H01L2224/94 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/80 ,  H01L2924/00014

Abstract: There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.

公开(公告)号：US20240194478A1

公开(公告)日：2024-06-13

申请号：US18078302

申请日：2022-12-09

Applicant: Tokyo Electron Limited

Inventor： Satohiko Hoshino ,  Scott Lefevre ,  Yuji Mimura

IPC: H01L21/02 ,  H01L21/18 ,  H01L21/67

CPC classification number: H01L21/02252 ,  H01L21/187 ,  H01L21/67017

Abstract: A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.

公开(公告)号：US20240079222A1

公开(公告)日：2024-03-07

申请号：US18262444

申请日：2022-01-19

Applicant: Tokyo Electron Limited

Inventor： Takashi Terada ,  Yuji Mimura ,  Hiroshi Maeda ,  Takuro Masuzumi ,  Masaru Honda ,  Ryoichi Sakamoto

IPC: H01J37/32 ,  G01N21/71 ,  H01J49/42 ,  H01L21/67

CPC classification number: H01J37/32917 ,  G01N21/718 ,  H01J49/42 ,  H01L21/67092 ,  H01J2237/24571 ,  H01J2237/336 ,  H01L24/80

Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

公开(公告)号：US11791182B2

公开(公告)日：2023-10-17

申请号：US17049645

申请日：2019-04-10

Applicant: Tokyo Electron Limited

Inventor： Yuji Mimura ,  Shigeto Tsuruta ,  Eiji Manabe ,  Hisanori Hizume

IPC: H01L21/67 ,  G01N21/95 ,  G06T7/00 ,  H01L21/687

CPC classification number: H01L21/67259 ,  G01N21/9501 ,  G06T7/0004 ,  H01L21/6875 ,  G06T2207/30204

Abstract: A measuring method includes measuring a displacement A1, placing an imaging unit 20 at a position where the imaging unit is allowed to image a measurement mark MI and imaging the measurement mark M1. In the measuring of the displacement A1, the displacement A1 of a surface of a combined substrate, which is composed of two sheets of substrates bonded to each other, on a side of the imaging unit 20 at a position where the measurement mark M1 for position deviation measurement, which is provided within the combined substrate, is placed is measured. In the imaging of the measurement mark M1, the measurement mark M1 is imaged by the imaging unit 20 while putting the measurement mark M1 in focus by moving a focal position back and forth with respect to a focal position which is previously set based on the displacement A1.

公开(公告)号：US10340248B2

公开(公告)日：2019-07-02

申请号：US15644292

申请日：2017-07-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masataka Matsunaga ,  Takashi Koga ,  Takeshi Tamura ,  Takahiro Masunaga ,  Yuji Mimura ,  Masaru Honda ,  Toshifumi Inamasu ,  Satoshi Nishimura

IPC: H01L21/18 ,  H01L21/67 ,  H01L23/00 ,  H05K13/00 ,  H01L21/677

Abstract: A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate in a normal pressure atmosphere, a surface modifying apparatus configured to modify surfaces of the first substrate and the second substrate to be bonded with each other in a depressurized atmosphere, a load lock chamber in which the first substrate and the second substrate are delivered between the substrate transfer device and the surface modifying apparatus and in which an internal atmosphere of the load lock chamber is switchable between an atmospheric pressure atmosphere and the depressurized atmosphere, a surface hydrophilizing apparatus configured to hydrophilize the modified surfaces of the first substrate and the second substrate, and a bonding apparatus configured to bond the hydrophilized surfaces of the first substrate and the second substrate by an intermolecular force.

公开(公告)号：US20230055853A1

公开(公告)日：2023-02-23

申请号：US17820299

申请日：2022-08-17

Applicant: Tokyo Electron Limited

Inventor： Takashi Terada ,  Yuji Mimura ,  Hiroshi Maeda ,  Kazutaka Noda ,  Masaru Honda ,  Ryoichi Sakamoto ,  Yutaka Yamasaki ,  Tatsuya Kitayama ,  Akira Fukutomi

IPC: B32B43/00

Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.