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    Bond pad structure for bonding improvement
    2.
    发明授权
    Bond pad structure for bonding improvement 有权

    公开(公告)号：US11869916B2

    公开(公告)日：2024-01-09

    申请号：US17097360

    申请日：2020-11-13

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chin-Wei Liang ,  Sheng-Chau Chen ,  Hsun-Chung Kuang ,  Sheng-Chan Li

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14685 ,  H01L27/14698

    Abstract: A method of fabricating a semiconductor device includes receiving a device substrate; forming an interconnect structure on a front side of the device substrate; and etching a recess into a backside of the device substrate until a portion of the interconnect structure is exposed. The recess has a recess depth and an edge of the recess is defined by a sidewall of the device substrate. A conductive bond pad is formed in the recess, and a first plurality of layers cover the conductive bond pad, extend along the sidewall of the device substrate, and cover the backside of the device substrate. The first plurality of layers collectively have a first total thickness that is less than the recess depth. A first chemical mechanical planarization is performed to remove portions of the first plurality of layers so remaining portions of the first plurality of layers cover the conductive bond pad.

    Image sensor with dual trench isolation structure
    3.
    发明授权
    Image sensor with dual trench isolation structure 有权

    公开(公告)号：US11705360B2

    公开(公告)日：2023-07-18

    申请号：US17197330

    申请日：2021-03-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Tzu-Jui Wang ,  Sheng-Chan Li

    IPC: H01L21/762 ,  H01L27/146

    CPC classification number: H01L21/76224 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

    Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

    STACKED STRUCTURE FOR CMOS IMAGE SENSORS
    4.
    发明申请
    STACKED STRUCTURE FOR CMOS IMAGE SENSORS 有权

    公开(公告)号：US20220238568A1

    公开(公告)日：2022-07-28

    申请号：US17336852

    申请日：2021-06-02

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

    IPC: H01L27/146

    Abstract: Some embodiments relate to an image sensor. The image sensor includes a semiconductor substrate including a pixel region and a peripheral region. A backside isolation structure extends into a backside of the semiconductor substrate and laterally surrounds the pixel region. The backside isolation structure includes a metal core, and a dielectric liner separates the metal core from the semiconductor substrate. A conductive feature is disposed over a front side of the semiconductor substrate. A through substrate via extends from the backside of the semiconductor substrate through the peripheral region to contact the conductive feature. The through substrate via is laterally offset from the backside isolation structure. A conductive bridge is disposed beneath the backside of the semiconductor substrate and electrically couples the metal core of the backside isolation structure to the through substrate via.

    COMPOSITE DEEP TRENCH ISOLATION STRUCTURE IN AN IMAGE SENSOR
    5.
    发明申请
    COMPOSITE DEEP TRENCH ISOLATION STRUCTURE IN AN IMAGE SENSOR 有权

    公开(公告)号：US20220223634A1

    公开(公告)日：2022-07-14

    申请号：US17144757

    申请日：2021-01-08

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Che Wei Yang ,  Sheng-Chan Li ,  Tsun-Kai Tsao ,  Chih-Cheng Shih ,  Sheng-Chau Chen ,  Cheng-Yuan Tsai

    IPC: H01L27/146

    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.

    Image sensor scheme for optical and electrical improvement
    9.
    发明授权
    Image sensor scheme for optical and electrical improvement 有权

    公开(公告)号：US10319768B2

    公开(公告)日：2019-06-11

    申请号：US15688077

    申请日：2017-08-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Sheng-Chan Li ,  Cheng-Hsien Chou ,  Cheng-Yuan Tsai ,  Keng-Yu Chou ,  Yeur-Luen Tu

    IPC: H01L27/146

    Abstract: The present disclosure relates to an image sensor integrated chip having a deep trench isolation (DTI) structure having a reflective element. In some embodiments, the image sensor integrated chip includes an image sensing element arranged within a substrate. A plurality of protrusions are arranged along a first side of the substrate over the image sensing element and one or more absorption enhancement layers are arranged over and between the plurality of protrusions. A plurality of DTI structures are arranged within trenches disposed on opposing sides of the image sensing element and extend from the first side of the substrate to within the substrate. The plurality of DTI structures respectively include a reflective element having one or more reflective regions configured to reflect electromagnetic radiation. By reflecting electromagnetic radiation using the reflective elements, cross-talk between adjacent pixel regions is reduced, thereby improving performance of the image sensor integrated chip.

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