公开(公告)号：US20240079483A1

公开(公告)日：2024-03-07

申请号：US18124980

申请日：2023-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hung LIN ,  I-Hsieh WONG ,  Tzu-Hua CHIU ,  Cheng-Yi PENG ,  Chia-Pin LIN

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66439

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, and an isolation structure disposed between the S/D region and the second portion of the fin base. The isolation structure includes an undoped semiconductor layer disposed on the second portion of the fin base, a silicon-rich dielectric layer disposed on the undoped semiconductor layer, and an air spacer disposed on the silicon-rich dielectric layer.

公开(公告)号：US20170342561A1

公开(公告)日：2017-11-30

申请号：US15169037

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo LIN ,  Yi-Hung LIN ,  Jr-Hung LI ,  Tze-Liang LEE ,  Ting-Gang CHEN ,  Chung-Ting KO

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/509 ,  H01J37/32 ,  H01L21/285 ,  H01L21/02

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US20170221739A1

公开(公告)日：2017-08-03

申请号：US15010935

申请日：2016-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Chieh HUNG ,  Ming-Hua YU ,  Yi-Hung LIN ,  Jet-Rung CHANG

IPC: H01L21/67 ,  G01B11/06 ,  H01L21/02 ,  H01L21/66 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L21/67253 ,  G01B11/0625 ,  G01B2210/56 ,  H01L21/02694 ,  H01L21/265 ,  H01L21/324 ,  H01L22/12

Abstract: A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.

公开(公告)号：US20170131084A1

公开(公告)日：2017-05-11

申请号：US14935006

申请日：2015-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Chieh HUNG ,  Yi-Hung LIN ,  Yu-Wei CHOU

IPC: G01B11/00 ,  G01B15/00 ,  G01B11/03

CPC classification number: G01B11/002 ,  G01B11/03 ,  G01B15/00 ,  G01B2210/56 ,  H01L21/823431 ,  H01L22/12 ,  H01L29/66795

Abstract: A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into a estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.