公开(公告)号：US20110248268A1

公开(公告)日：2011-10-13

申请号：US13167762

申请日：2011-06-24

申请人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

发明人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC分类号： H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20120132719A1

公开(公告)日：2012-05-31

申请号：US13368380

申请日：2012-02-08

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

IPC分类号： G06K19/073

CPC分类号： G06K19/07749 ,  G06K7/0008 ,  G06K19/0716 ,  G06K2017/0045

摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.

摘要翻译： 半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路 由无线信号产生。 这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。 通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

公开(公告)号：US20110261864A1

公开(公告)日：2011-10-27

申请号：US13177583

申请日：2011-07-07

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

IPC分类号： H04B1/56

CPC分类号： G06K19/07749

摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

摘要翻译： 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US20090218568A1

公开(公告)日：2009-09-03

申请号：US12391398

申请日：2009-02-24

申请人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

发明人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20080002454A1

公开(公告)日：2008-01-03

申请号：US11762146

申请日：2007-06-13

申请人： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： G11C11/40

CPC分类号： G11C7/12 ,  H01L21/84 ,  H01L27/112 ,  H01L27/12

摘要： In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.

摘要翻译： 关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。 包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。 为每个位线提供预充电电路并连接到位线。 此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

公开(公告)号：US20120154337A1

公开(公告)日：2012-06-21

申请号：US13325497

申请日：2011-12-14

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Takeshi AOKI

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Takeshi AOKI

IPC分类号： G06F3/042 ,  H01L27/146 ,  H01L31/12

CPC分类号： G06F3/042 ,  G06F3/0412 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/323 ,  H01L27/3234 ,  H01L29/7869

摘要： A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided.

摘要翻译： 提供了一种具有高清晰度的半导体器件，其包括多个组，每组包括光电传感器和包括以矩阵形式布置的发光元件的显示元件，其中电连接到显示元件的电源线也用作功率 电源线与光电传感器电连接。 因此，可以提供具有高清晰度的半导体器件而不减小每个电源线的宽度。 因此，可以在确保电源线的电位的稳定性的同时改善半导体器件的定义。 电源线的电位的稳定性导致显示元件的驱动电压的稳定性和光电传感器的驱动电压的稳定性。 因此，可以提供具有高清晰度，高显示质量以及对象的成像或检测的高精度的半导体器件。

公开(公告)号：US20120001878A1

公开(公告)日：2012-01-05

申请号：US13160865

申请日：2011-06-15

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： G09G5/00

CPC分类号： G09G3/3648 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/2003 ,  G09G3/3413 ,  G09G3/3655 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235 ,  G09G2310/08 ,  G09G2320/0242 ,  H01L29/7869

摘要： In a field-sequential liquid crystal display device, image quality and detection accuracy in image capture are improved by increasing the frequency of input of image signals and securing a sufficient imaging period. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix. Further, image capture is concurrently performed in pixels provided in a plurality of rows among pixels arranged in matrix. Thus, the frequency of input of an image signal to each pixel of the liquid crystal display device can be increased and a sufficient imaging period can be secured. As a result, in the liquid crystal display device, display deterioration such as color break which is caused in a field-sequential liquid crystal display device can be suppressed and improvements in image quality and detection accuracy in image capture can be realized.

摘要翻译： 在场顺序液晶显示装置中，通过增加图像信号的输入频率并确保足够的成像周期来提高图像捕获中的图像质量和检测精度。 图像信号同时提供给以矩阵排列的像素之间的多行中提供的像素。 此外，以矩阵排列的像素之间的多行中提供的像素同时执行图像捕获。 因此，可以增加对液晶显示装置的每个像素的图像信号的输入频率，并且可以确保足够的成像周期。 结果，在液晶显示装置中，可以抑制在场顺序液晶显示装置中引起的诸如色差的显示劣化，并且可以实现图像质量的提高和图像捕获中的检测精度。

公开(公告)号：US20110215323A1

公开(公告)日：2011-09-08

申请号：US13037889

申请日：2011-03-01

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Munehiro KOZUMA ,  Masataka IKEDA ,  Takeshi AOKI

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Munehiro KOZUMA ,  Masataka IKEDA ,  Takeshi AOKI

IPC分类号： H01L27/148 ,  H03B1/00

CPC分类号： H01L27/14616 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L29/7869 ,  H01L31/1055 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

摘要翻译： 在其中多个像素以矩阵形式布置的CMOS图像传感器中，其中沟道形成区域包括氧化物半导体的晶体管被​​用于处于像素部分的电荷累积控制晶体管和复位晶体管。 在矩阵中排列的所有像素中执行信号电荷累积部分的复位操作之后，在所有像素中执行光电二极管的电荷累积操作，并且每行执行来自像素的信号的读取操作。 因此，可以采取没有失真的图像。

公开(公告)号：US20100085331A1

公开(公告)日：2010-04-08

申请号：US12569400

申请日：2009-09-29

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： G06F3/042 ,  G09G3/36

CPC分类号： G06F3/0412 ,  G06F1/1616 ,  G06F1/1626 ,  G06F1/1643 ,  G06F3/03547 ,  G06F3/042

摘要： A touch panel having high reading accuracy of an object to be detected is provided. In a method for driving a touch panel which is provided with a photo sensor in a pixel, an image is displayed in a display portion of a touch panel, a detection region is determined by detecting approach or contact of an object to be detected in a state in which the image is displayed, and the object to be detected is read while substantially equalizing the intensity of light of pixels in the detection region per unit time and unit area. The intensity of light of the pixels per unit time and unit area, which is to be substantially equal, is preferably the maximum intensity of light in the detection region before adjustment, more preferably, the intensity of light for white display.

摘要翻译： 提供了具有待检测对象的高读取精度的触摸面板。 在用于驱动在像素中设置有光传感器的触摸面板的方法中，在触摸面板的显示部分中显示图像，通过检测检测对象的接近或接触来确定检测区域 显示图像的状态，并且在每单位时间和单位面积基本均衡检测区域中的像素的光强度的同时读取要检测的对象。 每单位时间和单位面积的像素的光强度基本上相等，优选是调整前的检测区域中的最大光强度，更优选白色显示的光强度。

公开(公告)号：US20120146027A1

公开(公告)日：2012-06-14

申请号：US13313539

申请日：2011-12-07

申请人： Hikaru TAMURA ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Hikaru TAMURA ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： H01L31/112 ,  H01L31/0376

CPC分类号： H01L27/14692

摘要： An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.

摘要翻译： 抑制寄生电容对光检测器电路的光数据输出的不良影响。 光检测器电路包括光电转换元件; 第一场效应晶体管; 第二场效应晶体管; 用作第一场效应晶体管的栅极的第一导电层; 设置在所述第一导电层上的绝缘层; 半导体层与第一导电层重叠，绝缘层插入其间; 电连接到半导体层的第二导电层; 电连接到所述半导体层的第三导电层，所述第三导电层与所述半导体层相对，所述第一导电层的一对侧表面与包括所述第一导电层的至少一个导电层重叠，所述第一导电层的绝缘层位于所述半导体层之间，并且其作为源和 第一场效应晶体管的漏极。