Gas sensor for measuring air-fuel ratio and method of manufacturing the
gas sensor
    2.
    发明授权
    Gas sensor for measuring air-fuel ratio and method of manufacturing the gas sensor 失效
    用于测量空燃比的气体传感器和制造气体传感器的方法

    公开(公告)号:US5032248A

    公开(公告)日:1991-07-16

    申请号:US362619

    申请日:1989-06-07

    IPC分类号: G01N27/407 G01N27/416

    CPC分类号: G01N27/4075 G01N27/4077

    摘要: The invention relates to a gas sensor for measuring an air-fuel ratio of an air-fuel mixture of an internal combustion engine and to a method of manufacturing the gas sensor. The sensor of the invention comprises: a solid state electrolyte layer made of an oxygen ion conductive metal oxide; a first electrode of a porous thin film having the catalyst function which was coated on one surface of the solid state electrolyte layer; a second electrode of a porous thin film having the catalyst function which was coated on the other surface of the solid state electrolyte layer; an electrode shielding layer made of a sintered material of ultra fine particulates whose average grain diameter is 1 .mu.m or less which covers the surface other than the region of a predetermined area of the second electrode; and a gas diffusion layer made of a porous electric insulative metal oxide which covers the region of the predetermined area of at least the second electrode.

    Slider unit controllably actuated at a surface of a moving information
recording medium
    4.
    发明授权
    Slider unit controllably actuated at a surface of a moving information recording medium 失效
    滑块单元可控制地在移动信息记录介质的表面上致动

    公开(公告)号:US5276573A

    公开(公告)日:1994-01-04

    申请号:US801352

    申请日:1991-12-02

    IPC分类号: G11B5/60 G11B21/21

    摘要: A slider unit having a reading or reproducing head, with the head being adapted to float over a surface of an information recording disc. The slider unit includes a slider body having a flying height sensor with float surfaces on an underside thereof to generate a lifting force. A piezoelectrically or electrostatically controlled valve layer may be positioned over a vent communicating between an upper surface of the slider, with the vent opening to a recess for generating a negative lift component at an underside of the slider unit. The slider body is made from a ceramic base portion and includes a semiconductive insert portion of, for example, silicon or a photosensitive glass with an adjustment device being formed by utilization of microfabrication techniques such as deposition and etching.

    摘要翻译: 具有读取或再现头的滑块单元,其头部适于在信息记录盘的表面上浮动。 滑块单元包括具有飞行高度传感器的滑块体,浮体表面在其下侧以产生提升力。 压电或静电控制的阀层可以位于在滑块的上表面之间连通的通风口上,通气口通向凹槽,用于在滑块单元的下侧产生负提升部件。 滑块体由陶瓷基部制成,并且包括例如硅或感光玻璃的半导体插入部分,其中调整装置通过利用诸如沉积和蚀刻的微细加工技术形成。

    Apparatus for diagnosing temperature state of carrier of catalyst converter
    7.
    发明授权
    Apparatus for diagnosing temperature state of carrier of catalyst converter 有权
    用于诊断催化转化器载体温度状态的装置

    公开(公告)号:US08775051B2

    公开(公告)日:2014-07-08

    申请号:US13096344

    申请日:2011-04-28

    IPC分类号: F02D41/00 G06F11/00

    摘要: An apparatus is used for diagnosing the temperature state of a catalyst converter. The catalyst converter includes a catalyst for cleaning an emission, and a conductive carrier for carrying the catalyst. The conductive carrier is energized for temperature rise of the catalyst, and the conductive carrier has a characteristic in which resistance drops with temperature increase. In the apparatus, a first obtaining unit obtains a first parameter having a first correlation with supply power to the conductive carrier for energization of the conductive carrier. A second obtaining unit obtains a second parameter having a second correlation with a temperature of the conductive carrier. A diagnosing unit diagnoses the temperature state of the conductive carrier based on a comparison between the first parameter and the second parameter.

    摘要翻译: 一种装置用于诊断催化转化器的温度状态。 催化剂转化器包括用于清洁发射的催化剂和用于承载催化剂的导电载体。 导电载体通电用于催化剂的升温,并且导电载体具有其中电阻随温度升高而下降的特性。 在该装置中,第一获取单元获得与导电载体具有与供电功率的第一相关性的第一参数,以对导电载体通电。 第二获取单元获得与导电载体的温度具有第二相关性的第二参数。 诊断单元基于第一参数和第二参数之间的比较来诊断导电载体的温度状态。

    Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp
    8.
    发明授权
    Method for manufacturing group III nitride semiconductor light emitting element, group III nitride semiconductor light emitting element and lamp 有权
    III族氮化物半导体发光元件,III族氮化物半导体发光元件和灯的制造方法

    公开(公告)号:US08772060B2

    公开(公告)日:2014-07-08

    申请号:US13119127

    申请日:2009-09-14

    摘要: The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

    摘要翻译: 本发明提供一种制造III族氮化物半导体发光元件的方法,可以在基板上形成各层的同时抑制翘曲,可以形成包括具有优异结晶性的发光层的半导体层,并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法,其中中间层,下层,n型接触层,n型包覆层,发光层,p型包覆层 和p型接触层依次层叠在基板的主平面上,其中直径为4英寸(100mm)以上的基板,其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; (0002)面的X射线摇摆曲线半峰全宽(FWHM)为100弧秒以下,(10-10)面的X射线摇摆曲线FWHM为300arcsec以下,处于 其中中间层已经形成在衬底上,然后在中间层上形成底层和n型接触层; 此外,在n型接触层上形成n型包覆层,发光层,p型覆层和p型接触层。

    Side release buckle
    9.
    发明授权
    Side release buckle 有权
    侧扣扣

    公开(公告)号:US08677576B2

    公开(公告)日:2014-03-25

    申请号:US13258133

    申请日:2009-12-25

    IPC分类号: A44B11/25

    摘要: A side release buckle includes a plug and a socket into which the plug is inserted for engagement. The plug includes: a base provided with a belt attachment; a pair of legs projecting from the base; an engaging portion formed to the legs; and a connecting portion connecting the legs to each other. The socket includes: a body provided with a belt attachment and an insertion opening; a housing space formed in the body and housing the legs inserted from the insertion opening; an engaged portion formed in the body and engageable with the engaging portion; and a cutout dented toward the insertion opening from an edge of the belt attachment. The cutout is formed over an area surrounded by the legs and the connecting portion when the legs and the connecting portion are housed in the housing space while the engaging portion and the engaged portion are engaged.

    摘要翻译: 侧释放带扣包括插头和插座,插头插入插座中用于接合。 插头包括:带有皮带附件的底座; 一对从基座突出的腿; 形成于所述腿部的卡合部; 以及将腿彼此连接的连接部。 插座包括:设置有皮带附件和插入开口的主体; 形成在所述主体中并容纳从所述插入开口插入的所述腿部的容纳空间; 接合部,形成在主体中并与接合部接合; 以及从皮带附件的边缘朝向插入开口凹陷的切口。 当接合部和接合部接合时,当腿和连接部容纳在容纳空间中时,切口形成在由腿和连接部围绕的区域上。