Petri dish for cultivating bacteria and method of inspecting drug
susceptibility
    1.
    发明授权
    Petri dish for cultivating bacteria and method of inspecting drug susceptibility 失效
    培养细菌的培养皿和检测药物敏感性的方法

    公开(公告)号:US4801548A

    公开(公告)日:1989-01-31

    申请号:US123141

    申请日:1987-11-20

    CPC分类号: C12M23/10

    摘要: A Petri dish for cultivating bacteria used for isolating the bacteria in an enrichment culture for performing drug susceptibility tests, etc. having a mouth covered with at least one sheet and at least one small opening provided on the bottom of the Petri dish, partitions having a height equal to the distance between the bottom of the Petri dish and the sheet may be provided in the Petri dish, and a sealing lid may be fitted over the small openings. A method of inspecting drug susceptibility of bacteria which are isolated from clinical specimens etc. or purely cultured after their isolation using the Petri dish. The method using the fractionized Petri dish having a pervious sheet as the cultivation surface assorts different kinds of media from each other, the media being different in the kind of drug contained in each media or media containing the same drug but in different concentrations in each section of the Petri dish into which the bacteria is inoculated.

    Petri dish for cultivating bacteria and method of inspecting drug
susceptibility
    2.
    发明授权
    Petri dish for cultivating bacteria and method of inspecting drug susceptibility 失效
    培养细菌的培养皿和检测药物敏感性的方法

    公开(公告)号:US4775628A

    公开(公告)日:1988-10-04

    申请号:US774757

    申请日:1985-09-11

    IPC分类号: C12M3/00 C12M1/22 C12Q1/04

    CPC分类号: C12M23/10

    摘要: A Petri dish for cultivating bacteria used for isolating the bacteria in an enrichment culture for performing drug susceptibility tests, etc. having a mouth covered with at least one sheet and at least one small opening provided on the bottom of the Petri dish, partitions having a height equal to the distance between the bottom of the Petri dish and the sheet may be provided in the Petri dish, and a sealing lid may be fitted over the small openings. A method of inspecting drug susceptibility of bacteria which are isolated from clinical specimens etc. or purely cultured after their isolation using the Petri dish. The method using the fractionized Petri dish having a pervious sheet as the cultivation surface assorts different kinds of media from each other, the media being different in the kind of drug contained in each media or media containing the same drug but in different concentrations in each section of the Petri dish into which the bacteria is inoculated.

    摘要翻译: 一种用于培养细菌的培养皿,用于在富集培养物中分离细菌以进行药物敏感性试验等,其具有覆盖有至少一片的口和设置在培养皿底部的至少一个小开口,具有 可以在培养皿中设置等于培养皿的底部和片材之间的距离的高度,并且可以在小开口上安装密封盖。 检查临床标本中分离的细菌的药物敏感性的方法,或使用培养皿分离后纯化培养的细菌的方法。 使用具有透视片作为培养表面的分级培养皿的方法将不同种类的培养基彼此分配,所述培养基在每个培养基中含有的药物种类不同,每个培养基或含有相同药物的培养基在每个部分中具有不同的浓度 的培养皿中接种细菌。

    Chondroitin Synthase, Method for Producing The Same and Method for Producing Saccharide Chain-Extended Chondroitin
    3.
    发明申请
    Chondroitin Synthase, Method for Producing The Same and Method for Producing Saccharide Chain-Extended Chondroitin 失效
    软骨素合酶,其生产方法和生产糖链扩展软骨素的方法

    公开(公告)号:US20130034878A1

    公开(公告)日:2013-02-07

    申请号:US13648130

    申请日:2012-10-09

    IPC分类号: C12P19/26

    CPC分类号: C12N9/1051 C12P19/26

    摘要: A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

    摘要翻译: 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA,该蛋白质含有SEQ ID NO:47至802的氨基酸序列。 ID。 NO:2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶,可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

    Method for producing saccharide chain-extended chondroitin
    4.
    发明授权
    Method for producing saccharide chain-extended chondroitin 失效
    生产糖链延长软骨素的方法

    公开(公告)号:US07354741B2

    公开(公告)日:2008-04-08

    申请号:US11599371

    申请日:2006-11-15

    CPC分类号: C12N9/1051 C12P19/26

    摘要: A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

    摘要翻译: 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA,该蛋白质含有SEQ ID NO:47至802的氨基酸序列。 ID。 NO:2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶,可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07262433B2

    公开(公告)日:2007-08-28

    申请号:US11137660

    申请日:2005-05-26

    IPC分类号: H01L27/12

    摘要: A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.

    摘要翻译: 在TFT阵列基板的第一区域形成包括栅极,源极区,漏极区,GOLD区和沟道区的第一薄膜晶体管。 在第二区域形成包括栅电极,源极区,漏极区,GOLD区和沟道区的第二薄膜晶体管。 第二薄膜晶体管的GOLD区域的GOLD长度(0.5μm)被设定为比第一薄膜晶体管的GOLD区域的GOLD长度(1.5μm)短。 因此,获得了旨在减小半导体元件所占的面积的半导体器件。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20070087535A1

    公开(公告)日:2007-04-19

    申请号:US11565429

    申请日:2006-11-30

    IPC分类号: H01L21/28 H01L21/44

    摘要: A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

    摘要翻译: 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管T,该薄膜晶体管T包括源极区,漏极区,具有预定沟道长度的沟道区,具有低于源区杂质浓度的杂质浓度的第一GOLD区, GOLD区域的杂质浓度低于漏极区域的杂质浓度,栅极绝缘膜和栅电极。 在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度 金地区。

    Semiconductor device having active region in semiconductor layer on
insulator layer and manufacturing method thereof
    8.
    发明授权
    Semiconductor device having active region in semiconductor layer on insulator layer and manufacturing method thereof 失效
    在半导体层绝缘体层上具有有源区的半导体器件及其制造方法

    公开(公告)号:US5528054A

    公开(公告)日:1996-06-18

    申请号:US416110

    申请日:1995-04-03

    摘要: Generation of new crystal defects in a monocrystalline semiconductor layer caused by heat treatment, oxidation treatment or polishing treatment is prevented in a method of manufacturing a semiconductor device of an SOI structure. Thus, unevenness in the properties of active devices formed on the monocrystalline semiconductor layers and their malfunctions can be restrained. A non-monocrystalline semiconductor layer formed on an insulator layer is melted to have a prescribed temperature distribution, and monocrystallized. The region of the obtained monocrystalline semiconductor layer corresponding to a high temperature portion in melting is selectively removed before the monocrystalline semiconductor layer is subjected to heat-treatment. Active devices are formed on the resultant island shaped monocrystalline semiconductor layers. The surface of the island shaped monocrystalline semiconductor layer may be polished to be planarized before the formation of the active device.

    摘要翻译: 在SOI结构的半导体器件的制造方法中,防止了由热处理,氧化处理或抛光处理引起的单晶半导体层中的新的晶体缺陷的产生。 因此,可以抑制在单晶半导体层上形成的有源器件的特性及其故障的不均匀性。 形成在绝缘体层上的非单晶半导体层被熔化成具有规定的温度分布,并进行单晶化。 在对单晶半导体层进行热处理之前,选择性地去除与熔融温度高的部分相对应的所获得的单晶半导体层的区域。 在所形成的岛状单晶半导体层上形成有源器件。 在形成有源器件之前,岛状单晶半导体层的表面可以被抛光以被平坦化。

    METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 有权
    制造半导体薄膜和半导体器件的方法

    公开(公告)号:US20100112790A1

    公开(公告)日:2010-05-06

    申请号:US12596453

    申请日:2007-12-05

    IPC分类号: H01L21/20 H01L21/268

    摘要: On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

    摘要翻译: 在半透明基板上,依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜,从非晶硅膜的与绝缘膜相对的侧面多次, 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离,由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界,并且以沿长度方向测量的平均间隔设置,范围为(λ/ n)×0.95〜(λ/ n)×1.05, 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中,在长度方向上延伸并沿宽度方向测量的平均间隔设置在(λ/ n)×0.95〜( λ/ n)×1.05(含)。