公开(公告)号：US10811283B2

公开(公告)日：2020-10-20

申请号：US15904539

申请日：2018-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako Kaneko ,  Keiji Tanouchi ,  Takehiko Orii ,  Itaru Kanno ,  Meitoku Aibara ,  Satoru Tanaka

IPC: H01L21/02 ,  H01L21/67

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

公开(公告)号：US10811264B2

公开(公告)日：2020-10-20

申请号：US16111792

申请日：2018-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro Wagatsuma ,  Miyako Kaneko ,  Naotaka Noro

IPC: H01L21/285 ,  C23C16/458 ,  C23C16/44 ,  C23C16/34 ,  C23C16/24

Abstract: There is provided a film-forming method, including: a pre-coating process of supplying a first gas containing silicon into a processing container in which a substrate is not loaded, and coating surfaces of members installed inside the processing container, including a mounting table configured to mount the substrate thereon, with a film made of silicon; subsequently, a mounting process of mounting the substrate on the mounting table so that a back surface of the substrate is in contact with the film made of silicon; and subsequently, a film-forming process of supplying a second gas containing an organometallic compound into the processing container, and forming a film made of a metal constituting the organometallic compound on the substrate.

公开(公告)号：US10535528B2

公开(公告)日：2020-01-14

申请号：US15730127

申请日：2017-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Shindo ,  Toshio Hasegawa ,  Naotaka Noro ,  Miyako Kaneko

IPC: H01L21/308 ,  H01L21/02

Abstract: A method for forming a titanium oxide film on a substrate to be processed, which has a silicon portion on a surface thereof, the method including: forming a first titanium oxide film on the surface of the substrate to be processed, which includes the silicon portion, by means of thermal ALD by alternately supplying a titanium-containing gas and a gas containing hydrogen and oxygen serving as an oxidizing agent in a first stage; and forming a second titanium oxide film on the first titanium oxide film by means of plasma ALD by alternately supplying a titanium-containing gas and plasma of an oxygen-containing gas as an oxidizing agent in a second stage.

公开(公告)号：US09799538B2

公开(公告)日：2017-10-24

申请号：US14025218

申请日：2013-09-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/68728 ,  H01L21/68792

Abstract: A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.

公开(公告)号：US20150064911A1

公开(公告)日：2015-03-05

申请号：US14468796

申请日：2014-08-26

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/67 ,  B05B9/00 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02

CPC classification number: B05B9/00 ,  B05B7/2497 ,  B05B12/14 ,  B05B13/0228 ,  B05B16/20 ,  H01L21/02063 ,  H01L21/6715 ,  H01L21/76814

Abstract: Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

Abstract translation: 生产力可以提高。 基板处理方法包括：处理液供给处理，其将含有挥发性成分的处理液供给到在基板上形成膜的基板上，在预处理后，在预处理之后， 治疗，执行; 以及在转印容器中容纳处理液体通过挥发性成分的挥发固化或固化的基板的收纳工序。

公开(公告)号：US10392698B2

公开(公告)日：2019-08-27

申请号：US15667817

申请日：2017-08-03

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Naotaka Noro ,  Tsuyoshi Takahashi ,  Kazuyoshi Yamazaki

IPC: C01C1/00 ,  C01G23/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/54 ,  C23C28/04 ,  C23C16/455

Abstract: A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO2 film by bringing a fluid containing O and H into contact with the surface of the SiO2 film; and performing a film forming processing of forming the Ti-containing film on the SiO2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

公开(公告)号：US20180047647A1

公开(公告)日：2018-02-15

申请号：US15673599

申请日：2017-08-10

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Naotaka Noro

IPC: H01L21/66 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/34 ,  C09D1/00 ,  G01N31/22

CPC classification number: H01L22/20 ,  C09D1/00 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  G01N31/22 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/32051 ,  H01L22/12

Abstract: A silanol group on a surface of a substrate having silicon on the surface thereof can be quantitatively analyzed with high accuracy. An analysis method for a silanol group on a substrate surface includes chemically modifying the silanol group by supplying a gas of a metal compound to a substrate having silicon on a surface thereof and allowing the gas of the metal compound to react with the silanol group existing on the surface of the substrate; measuring a concentration of a metal contained in the metal compound which is adsorbed to the surface of the substrate; and calculating a concentration of the silanol group based on the measured concentration of the metal and a ratio in which the metal compound is allowed to be adsorbed to the silanol group on the substrate surface.

公开(公告)号：US20180037989A1

公开(公告)日：2018-02-08

申请号：US15667817

申请日：2017-08-03

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Naotaka Noro ,  Tsuyoshi Takahashi ,  Kazuyoshi Yamazaki

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/34

CPC classification number: C23C16/402 ,  C01C1/00 ,  C01G23/022 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/54 ,  C23C28/04 ,  C23C28/042

Abstract: A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO2 film by bringing a fluid containing O and H into contact with the surface of the SiO2 film; and performing a film forming processing of forming the Ti-containing film on the SiO2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

公开(公告)号：US20150064910A1

公开(公告)日：2015-03-05

申请号：US14461869

申请日：2014-08-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/02 ,  B05B15/12 ,  B05B7/00 ,  B05B12/14 ,  H01L21/306 ,  H01L21/67

CPC classification number: B05B12/14 ,  B05B7/00 ,  B05B7/2497 ,  B05B13/0228 ,  B05B16/20 ,  H01L21/02063 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate.

Abstract translation: 基板处理方法包括向基板供给包含挥发性成分并形成膜的处理液，蒸发处理液中的挥发性成分，使得处理液在基板上固化或固化，并在基板上形成膜， 向形成在基板上的膜供应除去处理液体的去除液体。 在干蚀刻或灰化施加到基板上之后，将处理液体供给到基板上。

公开(公告)号：US20140144464A1

公开(公告)日：2014-05-29

申请号：US14025085

申请日：2013-09-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/02

CPC classification number: H01L21/02052 ,  B08B3/04 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/0209 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/68728

Abstract: A method for cleaning a substrate includes supplying a treatment solution which includes a volatile component onto the front surface of a substrate, solidifying or curing the treatment solution through vaporization of the volatile component of the treatment solution such that a treatment film is formed on the entire portion of the front surface of the substrate, treating a different surface of the substrate while the entire portion of the front surface of the substrate is covered with the treatment film, and supplying to the substrate a removal solution which removes the treatment film in the amount sufficient such that the treatment film covering the entire portion of the front surface of the substrate is removed substantially in entirety after the treating of the different surface of the substrate is finished.

Abstract translation: 清洗基板的方法包括将含有挥发性成分的处理液供给到基板的前表面，通过使处理液的挥发成分蒸发而固化或固化处理液，使得整个处理膜形成 基板的表面的一部分，在基板的前表面的整个部分被处理膜覆盖的同时处理基板的不同表面，并向该基板供给以该量除去处理膜的去除溶液 足以使得在基板的不同表面的处理完成之后基本上完全去除覆盖基板的正面的整个部分的处理膜。