公开(公告)号：US11990318B2

公开(公告)日：2024-05-21

申请号：US17520500

申请日：2021-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32724

Abstract: There is provided a filter circuit provided in a plasma processing device for processing a substrate using plasma generated using power of a first frequency of 4 MHz or more and power of a second frequency of 100 Hz or more and less than 4 MHz. The filter circuit comprises: a first filter provided in a wiring between a conductive member provided in the plasma processing device and a power supply configured to supply power of a third frequency of less than 100 Hz or control power which is direct-current (DC) power, to the conductive member; and a second filter provided in a wiring between the first filter and the power supply.

公开(公告)号：US20210407771A1

公开(公告)日：2021-12-30

申请号：US16913548

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Yohei Yamazawa ,  Chelsea Dubose ,  Barton Lane

IPC: H01J37/32 ,  H01J37/244

Abstract: In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

公开(公告)号：US10529539B2

公开(公告)日：2020-01-07

申请号：US15290846

申请日：2016-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3065

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

公开(公告)号：US10381197B2

公开(公告)日：2019-08-13

申请号：US15494131

申请日：2017-04-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa

IPC: H01F27/00 ,  H03H7/00 ,  H01F38/14 ,  H01F38/18 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A transformer includes: a rotary shaft configured to rotate about a central axis of the rotary shaft as a rotational axis; a primary-side first coil configured to extend around a first axis perpendicular to the central axis; a secondary-side second coil configured to extend around a second axis and supported by the rotary shaft, the second axis being perpendicular to the rotational axis in an area surrounded by the first coil; and a secondary-side third coil configured to extend around a third axis and supported by the rotary shaft, the third axis being perpendicular to the rotational axis and forming a predetermined angle with the second axis in the area.

公开(公告)号：US20140326409A1

公开(公告)日：2014-11-06

申请号：US14331690

申请日：2014-07-15

Applicant: Tokyo Electron Limited

Inventor： Akira KOSHIISHI ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制从可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US12176183B2

公开(公告)日：2024-12-24

申请号：US18486220

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

IPC: H01J37/32 ,  G01R29/08

Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

公开(公告)号：US20240203713A1

公开(公告)日：2024-06-20

申请号：US18066078

申请日：2022-12-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Jun Shinagawa ,  Merritt Funk ,  Yohei Yamazawa

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/3341 ,  H01J2237/335

Abstract: A method for processing a substrate that includes: processing a series of substrates using a plasma processing system having a plasma processing chamber by reactive ion etching (RIE) according to a RIE process condition; and after the processing, performing an in-situ diagnosis of the plasma processing system, the in-situ diagnosis including loading a substrate in the plasma processing chamber, depositing a film over the substrate, purging the plasma processing chamber with an inert gas, generating a RF plasma in the plasma processing chamber from the inert gas, sputtering the film to generate an etch product, the sputtering including exposing the substrate to the RF plasma, determining a rate of the sputtering of the film, and based on the rate of the sputtering of the film, determining a usability condition of the plasma processing system for processing another substrate.

公开(公告)号：US20230282446A1

公开(公告)日：2023-09-07

申请号：US17649823

申请日：2022-02-03

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa ,  Kazuki Moyama ,  Barton Lane ,  Merritt Funk

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32577

Abstract: An antenna includes an inner structure, an outer structure, and a plurality of interconnecting structures coupling the inner structure to the outer structure. The plurality of interconnecting structures is axisymmetric with respect to a center of the antenna. Each interconnecting structure has an azimuthal component of at least 30 degrees.

公开(公告)号：US20230054430A1

公开(公告)日：2023-02-23

申请号：US17664607

申请日：2022-05-23

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Yohei Yamazawa ,  Jason Mehigan ,  Merritt Funk

IPC: H01J37/32

Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes an interface, a radiating structure, and conductive offsets. The interface includes a first conductive plate couplable to an RF source, a second conductive plate disposed between the RF source and the first conductive plate, and conductive concentric ring structures disposed between the second conductive plate and a substrate holder. The conductive offsets are arranged to couple the conductive concentric ring structures to the radiating structure.

公开(公告)号：US10593517B2

公开(公告)日：2020-03-17

申请号：US15593861

申请日：2017-05-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa

IPC: H01J37/32

Abstract: A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high frequency power supply; a transformer including a primary coil coupled to the high frequency power supply via the matcher, first and second secondary coils; and at least one impedance adjusting circuit having a variable impedance, and installed in at least one of a first serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, and a second serial circuit between the second electrode and a ground connected to the other end of the second secondary coil.