公开(公告)号：US11869750B2

公开(公告)日：2024-01-09

申请号：US17272771

申请日：2019-08-23

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Takehiro Tanikawa ,  Shuhei Yamabe ,  Yuki Machida ,  Jun Young Chung

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32504

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

公开(公告)号：US11715630B2

公开(公告)日：2023-08-01

申请号：US16409347

申请日：2019-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Hayasaka ,  Shuhei Yamabe ,  Naoki Tamaru ,  Keisuke Yoshimura ,  Kyo Tsuboi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32522 ,  H01J37/32495 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32834 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/334

Abstract: A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

公开(公告)号：US10529599B2

公开(公告)日：2020-01-07

申请号：US14527464

申请日：2014-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshinori Kitabata ,  Yusuke Hayasaka ,  Kazuya Matsumoto

IPC: H01L21/67 ,  H01J37/32 ,  F16C29/02 ,  F16K3/02 ,  H01L21/677

Abstract: In a substrate processing apparatus of the present disclosure, a bearing member includes a decaying mechanism provided with a connecting shaft inserted therein and configured to decay radicals or ions; a first member configured to cover the decaying mechanism; and a second member disposed at the connecting shaft and provided with the connecting shaft inserted therein while being in contact with a sealing member. Further, an end of the first member and an end of the second member are connected to be engaged with each other, an invasion path is formed to allow the radicals to invade from the connected portion of the end of the first member and the end of the second member, and the invasion path is formed to be folded back in an extending direction of the connecting shaft. The sealing member is made of a material having a tensile strength larger than 12.1 MPa.

公开(公告)号：US11978614B2

公开(公告)日：2024-05-07

申请号：US16903571

申请日：2020-06-17

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Jun Young Chung ,  Shuhei Yamabe ,  Keiichi Yamaguchi ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32651 ,  H01J37/32743 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber having a plasma processing space, a sidewall of the chamber having an opening for transferring a substrate into the plasma processing space; and a shutter disposed at an inner side than the sidewall and configured to open or close the opening, the shutter having a flow path for a temperature-controlled fluid.

公开(公告)号：US12243723B2

公开(公告)日：2025-03-04

申请号：US17804027

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke Hayasaka ,  Atsushi Sasaki ,  Kazuya Matsumoto ,  Shingo Takahashi ,  Koichi Nagami

IPC: H01J37/32

Abstract: In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

公开(公告)号：US20150122422A1

公开(公告)日：2015-05-07

申请号：US14532175

申请日：2014-11-04

Applicant: Tokyo Electron Limited ,  Fuji Polymer Industries Co., Ltd.

Inventor： Yusuke Hayasaka ,  Katsuyuki Suzumura

IPC: C09K5/14 ,  H01J37/32

CPC classification number: C09K5/14 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32724

Abstract: A plasma processing apparatus includes a thermally conductive silicone sheet between a mounting table and a focus ring. The thermally conductive silicone sheet has 100 parts by weight to 2000 parts by weight of thermally conductive particles with respect to 100 parts by weight of polyorganosiloxane, and the sheet has a thermal conductivity of 0.2 W/m·K to 5 W/m·K. Further, when the sheet has a shape of 38 mm in length, 38 mm in width, and 3 mm in thickness and is interposed between filter papers each having a diameter of 70 mm and kept under a load of 1 kg at 70° C. for 1 week, a bleed-out amount of a liquid component is 30 mg or less.

Abstract translation: 等离子体处理装置包括在安装台和聚焦环之间的导热硅胶片。 导热硅酮片相对于100重量份的聚有机硅氧烷为100重量份〜2000重量份的导热性粒子，该片的导热率为0.2W / m·K〜5W / m·K 。 此外，当片材具有长度为38mm，宽度为38mm，厚度为3mm的形状时，插入在70℃的直径为70mm并保持在1kg的负荷下的滤纸之间。 1周时，液体成分的渗出量为30mg以下。