摘要:
Column address A0-A11 is once predecoded by a first predecoder PD1, a second predecoder PD2, and a CDE buffer CDB and then applied to a column decoder CD. Column decoder CD selectively drives one of a plurality of column selecting lines CSL on the basis of the applied predecoded signals. This causes corresponding bit lines in respective memory cell arrays MCA1-MCA4 to be simultaneously selected. Column decoder CD includes a plurality of column drivers corresponding to the plurality of column selecting lines, and the column drivers are divided into a plurality of groups. The predecoded signals applied from second predecoder PD2 and CDE buffer CDB to column decoder CD are generated independently for respective groups, and signal lines for them are also distributed to respective groups. This causes the length of wiring of each predecoded signal line to be shortened.
摘要:
Column address A0-A11 is once predecoded by a first predecoder PD1, a second predecoder PD2, and a CDE buffer CDB and then applied to a column decoder CD. Column decoder CD selectively drives one of a plurality of column selecting lines CSL on the basis of the applied predecoded signals. This causes corresponding bit lines in respective memory cell arrays MCA1-MCA4 to be simultaneously selected. Column decoder CD includes a plurality of column drivers corresponding to the plurality of column selecting lines, and the column drivers are divided into a plurality of groups. The predecoded signals applied from second predecoder PD2 and CDE buffer CDB to column decoder CD are generated independently for respective groups, and signal lines for them are also distributed to respective groups. This causes the length of wiring of each predecoded signal line to be shortened.
摘要:
An n channel driver circuit comprised of an N channel MOS transistor is provided in parallel to a driver circuit comprised of a P channel MOS transistor. Normally, n channel driver circuit supplies an internal supply voltage, to activate driver circuit only at the time of current peak. Thus, an insufficient capability of n.sup.- channel driver circuit to supply current is supplemented.
摘要:
A power supply line is disposed parallel to a sense amplifier train including a plurality of sense amplifiers at the side of each subarray. The power supply line is connected to the sense amplifier included in the sense amplifier train via a plurality of drive transistors and a sense amplifier drive line.
摘要:
The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.
摘要:
The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.
摘要:
A semiconductor device having first and second digit line drivers and a bit line driver. When the address of one segment has been input from the outside, a segment decoder selects one segment corresponding to the address and couples the same to the selected first digit line driver. When the addresses of two or more segments have been input from the outside, the segment decoder selects two or more segments corresponding to the addresses and couples the selected two or more segments to the respective digital line drivers.
摘要:
In a DRAM, a boosted voltage Vpp is applied to a selected word line WL1 in a normal mode. In a test mode, a power supply voltage Vcc at a level lower than Vpp level is applied onto selected word line WL1. High data written into memory cell in the test mode of the DRAM is at the level lower than that of the high data written into memory cell in the normal mode. Therefore, a time before an H.fwdarw.L error occurs can be reduced, and a test time can be reduced.
摘要:
A switching circuit is provided which activates a shallow level detector and inactivates a deep level detector when a disturb test signal or a self refresh signal is activated. Accordingly, a shallow substrate voltage at the same level as a detection level of the shallow level detector can be generated by a substrate voltage generating circuit not only in a disturb test mode but also in a self refresh mode. As a result, the area penalty due to the shallow level detector is reduced.
摘要:
A pulse signal generating circuit includes a ring oscillator and an internal voltage generating circuit. The internal voltage generating circuit generates an internal voltage depending on an operation temperature. The internal voltage is low at a normal temperature, and is high at a high temperature. Each inverter in the ring oscillator is driven by the internal voltage supplied from the internal voltage generating circuit. Thereby, a period of a pulse signal increases at a normal temperature, and decreases at a high temperature.