公开(公告)号：US20250113605A1

公开(公告)日：2025-04-03

申请号：US18496941

申请日：2023-10-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wan-Tien Chou ,  Gang Ren ,  Xingxing Chen ,  Ji Feng ,  Guohai Zhang

IPC: H01L21/84 ,  H01L21/8234 ,  H01L27/12

Abstract: A method for fabricating a radio-frequency (RF) device includes the steps of first providing a substrate comprising a core region and a non-core region, forming a shallow trench isolation (STI) in the substrate between the core region and the non-core region, forming a first gate oxide layer on the core region and the non-core region, forming a patterned mask on the non-core region and the STI, removing the first gate oxide layer on the core region, and then forming a second gate oxide layer on the core region.

公开(公告)号：US11605648B2

公开(公告)日：2023-03-14

申请号：US17383283

申请日：2021-07-22

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US20190355812A1

公开(公告)日：2019-11-21

申请号：US16017840

申请日：2018-06-25

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.

公开(公告)号：US12249607B2

公开(公告)日：2025-03-11

申请号：US18152781

申请日：2023-01-11

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84 ,  H01L21/02

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US11955292B2

公开(公告)日：2024-04-09

申请号：US17987766

申请日：2022-11-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Xingxing Chen ,  Chao Jin

IPC: H01G4/38 ,  H01G4/008 ,  H01L21/288 ,  H01L21/321 ,  H01L23/522 ,  H01L23/528 ,  H01L27/01 ,  H01L49/02

CPC classification number: H01G4/385 ,  H01G4/008 ,  H01L21/2885 ,  H01L21/3212 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/01 ,  H01L28/75 ,  H01L28/91

Abstract: A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.

公开(公告)号：US10903314B2

公开(公告)日：2021-01-26

申请号：US16017840

申请日：2018-06-25

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306 ,  H01L21/285

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.

公开(公告)号：US11929213B2

公开(公告)日：2024-03-12

申请号：US16854887

申请日：2020-04-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Purakh Raj Verma ,  Ching-Yang Wen ,  Xingxing Chen ,  Chao Jin

IPC: H01G4/38 ,  H01G4/008 ,  H01L21/288 ,  H01L21/321 ,  H01L23/522 ,  H01L23/528 ,  H01L27/01 ,  H01L49/02

CPC classification number: H01G4/385 ,  H01G4/008 ,  H01L21/2885 ,  H01L21/3212 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/01 ,  H01L28/75 ,  H01L28/91

Abstract: A structure of capacitors connected in parallel includes a substrate. A trench embedded in the substrate. Numerous electrode layers respectively conformally fill in and cover the trench. The electrode layers are formed of numerous nth electrode layers, wherein n is a positive integer from 1 to M, and M is not less than 3. The nth electrode layer with smaller n is closer to the sidewall of the trench. When n equals to M, the Mth electrode layer fills in the center of the trench, and the top surface of the Mth electrode is aligned with the top surface of the substrate. A capacitor dielectric layer is disposed between the adjacent electrode layers. A first conductive plug contacts the nth electrode layer with odd-numbered n. A second conductive plug contacts the nth electrode layer with even-numbered n.

公开(公告)号：US20230154926A1

公开(公告)日：2023-05-18

申请号：US18152781

申请日：2023-01-11

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan QI ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/84 ,  H01L21/762

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L21/76256 ,  H01L21/02274

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US20220415926A1

公开(公告)日：2022-12-29

申请号：US17383283

申请日：2021-07-22

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Chunyuan Qi ,  Xingxing Chen ,  Chien-Kee Pang

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/84

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a carrier substrate, a trap-rich layer, a dielectric layer, an interconnect structure, a device structure layer and a circuit structure. The trap-rich layer is disposed on the carrier substrate. The dielectric layer is disposed on the trap-rich layer. The interconnect structure is disposed on the dielectric layer. The device structure layer is disposed on the interconnect structure and electrically connected to the interconnect structure. The circuit structure is disposed on the device structure layer and electrically connected to the device structure layer.

公开(公告)号：US20210104602A1

公开(公告)日：2021-04-08

申请号：US17124124

申请日：2020-12-16

Applicant: United Microelectronics Corp.

Inventor： Wen-Shen Li ,  Ching-Yang Wen ,  Purakh Raj Verma ,  Xingxing Chen ,  Chee-Hau Ng

IPC: H01L29/06 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an insulating layer, a semiconductor layer, a plurality of isolation structures, a transistor, a first contact, a plurality of silicide layers, and a protective layer. The semiconductor layer is disposed on a front side of the insulating layer. The plurality of isolation structures are disposed in the semiconductor layer. The transistor is disposed on the semiconductor layer. The first contact is disposed beside the transistor and passes through one of the plurality of isolation structures and the insulating layer therebelow. The plurality of silicide layers are respectively disposed on a bottom surface of the first contact and disposed on a source, a drain, and a gate of the transistor. The protective layer is disposed between the first contact and the insulating layer.