公开(公告)号：US07768139B2

公开(公告)日：2010-08-03

申请号：US10535622

申请日：2003-10-27

申请人： Wolfgang Knapp ,  Helmut Keser

发明人： Wolfgang Knapp ,  Helmut Keser

IPC分类号： H01L23/28 ,  H01L23/34

CPC分类号： H01L23/293 ,  H01L23/3142 ,  H01L25/162 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01067 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/00

摘要： A power semiconductor module is disclosed with a housing that includes a hardenable plastic casting compound and a base plate, wherein electric power semiconductor components are arranged on a section of the surface of the base plate that faces the housing via an insulating layer. At least the section of the surface of the base plate that faces the housing and contains the electric power semiconductor components is encapsulated in the housing wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.

摘要翻译： 公开了一种功率半导体模块，其具有包括可硬化塑料浇铸复合物和基板的壳体，其中电功率半导体部件布置在经由绝缘层面向壳体的基板的表面的一部分上。 至少基板的面向壳体并且包含电力半导体部件的部分被封装在壳体中，其中可硬化塑料铸造化合物的硬度在30和95肖氏A之间。

公开(公告)号：US20060214186A1

公开(公告)日：2006-09-28

申请号：US10551763

申请日：2004-04-01

申请人： Amina Hamidi ,  Wolfgang Knapp ,  Luc Meysenc ,  Helmut Keser

发明人： Amina Hamidi ,  Wolfgang Knapp ,  Luc Meysenc ,  Helmut Keser

IPC分类号： H01L31/111 ,  H01L21/00

CPC分类号： H01L23/24 ,  H01L23/3142 ,  H01L23/3735 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/19041 ,  H01L2924/00012

摘要： A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method includes steps of bonding an insulating substrate onto a bottom plate; disposing a first conductive layer on a portion of said insulating substrate, so that at least one peripheral top region of said insulating substrate remains uncovered by the first conductive layer; bonding a semiconductor chip onto said first conductive layer; disposing a precursor of a first insulating material in a first corner formed by the first conductive layer and the peripheral region of the insulating substrate; polymerizing the precursor of the first insulating material to form the first insulating material; and covering the semiconductor chip, said substrate, the first conductive layer, and the first insulating material at least partially with a second insulating material. The precursor of the first insulating material can be a low viscosity monomer or oligomer, preferably a polyimide. Also disclosed is a semiconductor module with reduced partial discharge behavior.

摘要翻译： 描述了具有减小的局部放电行为的功率半导体模块的组装方法。 该方法包括将绝缘衬底粘合到底板上的步骤; 在所述绝缘衬底的一部分上设置第一导电层，使得所述绝缘衬底的至少一个外围顶部区域保持未被所述第一导电层覆盖; 将半导体芯片接合到所述第一导电层上; 在由第一导电层和绝缘基板的周边区域形成的第一拐角中设置第一绝缘材料的前体; 聚合第一绝缘材料的前体以形成第一绝缘材料; 并且至少部分地用第二绝缘材料覆盖半导体芯片，所述衬底，第一导电层和第一绝缘材料。 第一绝缘材料的前体可以是低粘度单体或低聚物，优选聚酰亚胺。 还公开了具有减小的局部放电特性的半导体模块。

公开(公告)号：US20060238983A1

公开(公告)日：2006-10-26

申请号：US10535622

申请日：2003-10-27

申请人： Wolfgang Knapp ,  Helmut Keser

发明人： Wolfgang Knapp ,  Helmut Keser

IPC分类号： H04R25/00 ,  H05K7/20

CPC分类号： H01L23/293 ,  H01L23/3142 ,  H01L25/162 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01067 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/00

摘要： The invention proposes a power semiconductor module with a housing (1) that consists of a hardenable plastic casting compound and a base plate (2), wherein electric power semiconductor components (4) are arranged on a section of the surface of the base plate (2) that faces the housing (1) by means of an insulating layer (5). At least the section of the surface of the base plate (2) that faces of the housing (1) and contains the electric power semiconductor components (4) is encapsulated in the housing( ), wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.

摘要翻译： 本发明提出了一种功率半导体模块，其具有由可硬化塑料铸造复合物和基板（2）组成的壳体（1），其中电功率半导体部件（4）布置在基板的表面的一部分上 2）通过绝缘层（5）面向壳体（1）。 至少所述基板（2）的面对所述壳体（1）并且包含所述电力半导体部件（4）的部分被封装在所述壳体（）中，其中所述可硬化塑料浇铸复合材料之间的硬度介于 30和95 ShoreA。

公开(公告)号：US20080153211A1

公开(公告)日：2008-06-26

申请号：US12068212

申请日：2008-02-04

申请人： Amina Hamidi ,  Wolfgang Knapp ,  Luc Meysenc ,  Helmut Keser

发明人： Amina Hamidi ,  Wolfgang Knapp ,  Luc Meysenc ,  Helmut Keser

IPC分类号： H01L21/56

CPC分类号： H01L23/24 ,  H01L23/3142 ,  H01L23/3735 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/19041 ,  H01L2924/00012

摘要： A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the steps of bonding an insulating substrate (2) onto a bottom plate (11); disposing a first conductive layer (4) on a portion of said insulating substrate (2), so that at least one peripheral top region of said insulating substrate (2) remains uncovered by the first conductive layer (4); bonding a semiconductor chip (6) onto said first conductive layer (4); disposing a precursor (51) of a first insulating material (5) in a first corner (24) formed by said first conductive layer (4) and said peripheral region of said insulating substrate (2); polymerizing the precursor (51) of the first insulating material (5) to form the first insulating material (5): and covering said semiconductor chip (6), said substrate (2), said first conductive layer (4), and said first insulating material (5) at least partially with a second insulating material. According to the invention, the precursor (51) of the first insulating material is a low viscosity monomer or oligomer, which forms a polyimide when polymerizing. Also disclosed is a semiconductor module with reduced partial discharge behavior.

摘要翻译： 描述了具有减小的局部放电行为的功率半导体模块的组装方法。 该方法包括以下步骤：将绝缘衬底（2）接合到底板（11）上; 在所述绝缘基板（2）的一部分上设置第一导电层（4），使得所述绝缘基板（2）的至少一个周边顶部区域保持未被所述第一导电层（4）覆盖; 将半导体芯片（6）接合到所述第一导电层（4）上; 在由所述第一导电层（4）和所述绝缘基板（2）的所述周边区域形成的第一角（24）中设置第一绝缘材料（5）的前体（51） 聚合第一绝缘材料（5）的前体（51）以形成第一绝缘材料（5）;并且覆盖所述半导体芯片（6），所述基板（2），所述第一导电层（4）和所述第一绝缘材料 绝缘材料（5）至少部分地具有第二绝缘材料。 根据本发明，第一绝缘材料的前体（51）是聚合时形成聚酰亚胺的低粘度单体或低聚物。 还公开了具有减小的局部放电特性的半导体模块。

公开(公告)号：US20100155924A1

公开(公告)日：2010-06-24

申请号：US12488196

申请日：2009-06-19

申请人： Wolfgang Knapp ,  Christoph Häderli

发明人： Wolfgang Knapp ,  Christoph Häderli

IPC分类号： H01L23/48 ,  H01L23/34

CPC分类号： H01L25/115 ,  H01L24/72 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/48247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/014 ,  H01L2924/00

摘要： A semiconductor module includes first and second sub-units, each including at least one semiconductor chip, a first contact element having a first contact side, and a second or third contact element having a second or third contact side, respectively. The semiconductor chip has opposing first and second main electrode sides. The first main electrode side of the chip is thermally connected to the first contact side, and the second main electrode side is thermally connected to the second or third contact side. In the first sub-unit, a first fixation means connects the first and second contact elements and the chip together. In the second sub-unit, a second fixation means connects the first and third contact elements and the chip together. A flexible element, which is arranged between the first contact element and the first contact element, is electrically and thermally connected to the first contact elements.

摘要翻译： 半导体模块包括第一和第二子单元，每个子单元包括至少一个半导体芯片，具有第一接触侧的第一接触元件和具有第二或第三接触侧的第二或第三接触元件。 半导体芯片具有相对的第一和第二主电极侧。 芯片的第一主电极侧热连接到第一接触侧，第二主电极侧热连接到第二或第三接触侧。 在第一子单元中，第一固定装置将第一和第二接触元件和芯片连接在一起。 在第二子单元中，第二固定装置将第一和第三接触元件和芯片连接在一起。 布置在第一接触元件和第一接触元件之间的柔性元件电连接和热连接到第一接触元件。

公开(公告)号：US20080283579A1

公开(公告)日：2008-11-20

申请号：US12149410

申请日：2008-05-01

申请人： Satish Gunturi ,  Raymond Zehringer ,  Wolfgang Knapp

发明人： Satish Gunturi ,  Raymond Zehringer ,  Wolfgang Knapp

IPC分类号： B23K31/02

CPC分类号： H01L24/80 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/7511 ,  H01L2224/75251 ,  H01L2224/75315 ,  H01L2224/83209 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/00 ,  H01L2924/3512

摘要： A first electronic component, e.g., a semiconductor die and a second electronic component, e.g., a substrate, each with a main surface, are bonded to each other by applying at least one metal layer comprising an indium layer on each of the main surfaces. Then the semiconductor die and the substrate are aligned against each other with their main surfaces facing each other. The die and substrate with the metal layers in between form an arrangement, which is introduced into a compression means. Afterwards the arrangement is compressed in the compression means at a pressure in a range of 10 to 35 MPa, and heat in a range of 230 to 275° C. is applied to the arrangement, by which temperature and pressure the electronic components are bonded to each other. The compression process is performable in oxygeneous gas atmosphere inside the compression means.

摘要翻译： 通过在每个主表面上施加包含铟层的至少一个金属层，将第一电子部件（例如半导体管芯）和第二电子部件（例如，各自具有主表面的基板）彼此接合。 然后半导体管芯和衬底彼此对准，其主表面彼此相对。 在其间具有金属层的管芯和衬底形成被引入到压缩装置中的布置。 之后，在10〜35MPa的压力下，在压缩机构中压缩该配置，在该结构中施加230〜275℃的范围内的热量，将电子部件的温度和压力结合到 彼此。 压缩过程在压缩装置内的氧气气氛中是可执行的。

公开(公告)号：US06921969B2

公开(公告)日：2005-07-26

申请号：US10315086

申请日：2002-12-10

申请人： Wolfgang Knapp

发明人： Wolfgang Knapp

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/13 ,  H01L23/498 ,  H01L25/04 ,  H01L25/07 ,  H01L25/18 ,  H01L23/06

CPC分类号： H01L21/4875 ,  H01L23/13 ,  H01L23/49861 ,  H01L24/45 ,  H01L24/48 ,  H01L24/72 ,  H01L25/072 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： The semiconductor module comprises a base element (1), an insulating element (2), which is metallized on both sides and rests on the base element by one of the two metallizations, and at least one semiconductor element (6) arranged on the other of the two metallizations. An electrically insulating layer (51) is arranged in the edge region of the insulating element (2), the surface of this insulating layer forming a common planar surface with the surface of the second metallization. The blunting of the edges and corners of the metallization by level embedding of the entire metallized insulating element improves the insulating property of semiconductor module in the area of the critical electrical field region. Moreover, the arrangement in one plane permits simple and low-cost production.

摘要翻译： 半导体模块包括基底元件（1），绝缘元件（2），其在两侧金属化并且由两个金属化之一搁置在基底元件上，并且至少一个半导体元件（6）布置在另一个上 的两个金属化。 绝缘层（51）布置在绝缘元件（2）的边缘区域中，该绝缘层的表面与第二金属化层的表面形成共同的平坦表面。 通过整个金属化绝缘元件的水平嵌入，金属化的边缘和角部钝化改善了半导体模块在临界电场区域的区域中的绝缘性能。 此外，一个飞机的安排允许简单和低成本的生产。

公开(公告)号：US20090239408A1

公开(公告)日：2009-09-24

申请号：US12405277

申请日：2009-03-17

申请人： Robert Sacher ,  Wolfgang Knapp

发明人： Robert Sacher ,  Wolfgang Knapp

IPC分类号： H01R13/64 ,  H01R29/00

CPC分类号： H01R4/28

摘要： The disclosure relates to a connection device, in particular a heavy-duty plug-type connection, with a first connector and a second connector, which each have a contact-making element in order to produce an electrical connection in the connected state of the connectors; the connectors bearing against one another at a connection region in the connected state; at least one of the connectors comprising a coolant line with one or more access points for the supply and discharge, respectively, of a coolant; the coolant line being provided at the contact-making element in order to dissipate heat from a contact point between the contact-making elements; all of the access points of the coolant line being arranged outside of the connection region.

摘要翻译： 本公开涉及一种具有第一连接器和第二连接器的连接装置，特别是重型插头式连接器，每个连接器和第二连接器均具有接触元件，以便在连接器的连接状态下产生电连接 ; 所述连接器在连接状态下的连接区域彼此抵接; 所述连接器中的至少一个包括分别具有用于冷却剂的供给和排出的一个或多个接入点的冷却剂管线; 所述冷却剂管线设置在所述接触元件处，以便从所述接触元件之间的接触点散发热量; 冷却液管路的所有接入点均设置在连接区域的外侧。

公开(公告)号：US20060138452A1

公开(公告)日：2006-06-29

申请号：US11304703

申请日：2005-12-16

申请人： Wolfgang Knapp ,  Stefanie Apeldoorn

发明人： Wolfgang Knapp ,  Stefanie Apeldoorn

IPC分类号： H01L31/111

CPC分类号： H01L25/072 ,  H01L23/051 ,  H01L23/36 ,  H01L23/4006 ,  H01L2224/48091 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16152 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power semiconductor module (1) with a housing (2) and at least one semiconductor chip (3, 3′) located in it is devised. At least one semiconductor chip (3, 3′) has a first main electrode side (31) and a second main electrode side (32) opposite the first main electrode side, the first main electrode side (31) making thermal and electrical contact with the first base plate (4, 4′). The first cooling device (6) makes thermal and electrical contact with the side of the first base plate (41) facing away from the first main electrode side. The second main electrode side (32) makes thermal and electrical contact with a second base plate (5, 5′). A second cooling device (7) makes thermal contact with the side of the second base plate (51) facing away from the second main electrode side. The heat sink (65) of the first cooling device is supported against the housing (2).

摘要翻译： 设计了具有壳体（2）和位于其中的至少一个半导体芯片（3,3'）的功率半导体模块（1）。 至少一个半导体芯片（3,3'）具有与第一主电极侧相对的第一主电极侧（31）和第二主电极侧（32），第一主电极侧（31）与第一主电极侧 第一基板（4,4'）。 第一冷却装置（6）与第一基板（41）的离开第一主电极侧的一侧进行热电接触。 第二主电极侧（32）与第二基板（5,5'）进行热电接触。 第二冷却装置（7）与第二基板（51）背离第二主电极侧的一侧进行热接触。 第一冷却装置的散热器（65）支撑在壳体（2）上。

公开(公告)号：US06935556B2

公开(公告)日：2005-08-30

申请号：US10192630

申请日：2002-07-11

申请人： Wolfgang Knapp

发明人： Wolfgang Knapp

IPC分类号： H01L21/52 ,  H01L21/00 ,  H01L21/60 ,  H01L21/603 ,  B23K31/02

CPC分类号： H01L21/67121 ,  H01L21/67092 ,  H01L24/29 ,  H01L24/33 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29339 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： In the method for mounting electronic components on substrates by means of pressure sintering, a paste which is composed of a metal powder and a solvent is applied between the component and the substrate. Once the paste has dried completely, the component is placed on the substrate. A number of such arrangements (4) together with a substrate and component are then compressed at the sintering temperature in an isostatic press (6). A large number of complex and/or fragile parts can be connected at the same time, and with very high precision.

摘要翻译： 在通过压力烧结将电子部件安装在基板上的方法中，将由金属粉末和溶剂构成的糊料施加在部件和基板之间。 一旦浆料完全干燥，将组分放置在基材上。 然后将许多这样的布置（4）与基底和部件一起在等静压机（6）中在烧结温度下被压缩。 大量的复杂和/或脆弱的零件可以同时连接，并具有非常高的精度。