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公开(公告)号:US20150214162A1
公开(公告)日:2015-07-30
申请号:US14604525
申请日:2015-01-23
Applicant: XINTEC INC.
Inventor: Jiun-Yen LAI , Yu-Wen HU , Bai-Yao LOU , Chia-Sheng LIN , Yen-Shih HO , Hsin KUAN
IPC: H01L23/00
CPC classification number: H01L24/81 , H01L23/5227 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/48 , H01L28/10 , H01L2224/03462 , H01L2224/0347 , H01L2224/03902 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05005 , H01L2224/05007 , H01L2224/05022 , H01L2224/05026 , H01L2224/05027 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05562 , H01L2224/05564 , H01L2224/05571 , H01L2224/05583 , H01L2224/05644 , H01L2224/13021 , H01L2224/1308 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13562 , H01L2224/13644 , H01L2224/48 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/014
Abstract: A manufacturing method of a passive component structure includes the following steps. A protection layer is formed on a substrate, and bond pads of the substrate are respectively exposed through protection layer openings. A conductive layer is formed on the bond pads and the protection layer. A patterned photoresist layer is formed on the conductive layer, and the conductive layer adjacent to the protection layer openings is exposed through photoresist layer openings. Copper bumps are respectively electroplated on the conductive layer. The photoresist layer and the conductive layer not covered by the copper bumps are removed. A passivation layer is formed on the copper bumps and the protection layer, and at least one of the copper bumps is exposed through a passivation layer opening. A diffusion barrier layer and an oxidation barrier layer are chemically plated in sequence on the copper bump.
Abstract translation: 无源元件结构的制造方法包括以下步骤。 保护层形成在基板上,并且基板的接合焊盘分别通过保护层开口露出。 在接合焊盘和保护层上形成导电层。 在导电层上形成图案化的光致抗蚀剂层,并且与保护层开口相邻的导电层通过光致抗蚀剂层开口露出。 铜凸块分别电镀在导电层上。 除去未被铜凸块覆盖的光致抗蚀剂层和导电层。 在铜凸块和保护层上形成钝化层,并通过钝化层开口露出至少一个铜凸块。 扩散阻挡层和氧化阻挡层依次化学镀在铜凸块上。
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公开(公告)号:US20170271432A1
公开(公告)日:2017-09-21
申请号:US15613083
申请日:2017-06-02
Applicant: XINTEC INC.
Inventor: Wei-Ming LAI , Yu-Wen HU
IPC: H01L49/02 , H01L23/522 , H01L23/31 , H01L23/00 , H01L23/64
CPC classification number: H01L28/10 , H01L23/3171 , H01L23/5227 , H01L23/53238 , H01L23/645 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/0391 , H01L2224/03912 , H01L2224/0401 , H01L2224/05084 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11474 , H01L2224/11825 , H01L2224/11903 , H01L2224/13083 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1355 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01079 , H01L2924/1206
Abstract: A manufacturing method of an inductor structure includes the following steps. A protection layer is formed on a substrate, such that bond pads of the substrate are respectively exposed form protection layer openings of the protection layer. A conductive layer is formed on the bond pads and the protection layer. A patterned first photoresist layer is formed on the conductive layer. Copper bumps are respectively formed on the conductive layer located in the first photoresist layer openings. A patterned second photoresist layer is formed on the first photoresist layer, such that at least one of the copper bumps is exposed through second photoresist layer opening and the corresponding first photoresist layer opening. A diffusion barrier layer and an oxidation barrier layer are formed on the copper bump. The first and second photoresist layers, and the conductive layer not covered by the copper bumps are removed.
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公开(公告)号:US20150097268A1
公开(公告)日:2015-04-09
申请号:US14483656
申请日:2014-09-11
Applicant: XINTEC INC.
Inventor: Wei-Ming LAI , Yu-Wen HU
IPC: H01L49/02
CPC classification number: H01L28/10 , H01L23/5227 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: An inductor structure includes a substrate, a protection layer, a patterned first conductive layer, copper bumps, a passivation layer, a diffusion barrier layer, and an oxidation barrier layer. The protection layer is located on the substrate. The bond pads of the substrate are respectively exposed through protection layer openings. The first conductive layer is located on the surfaces of the bond pads and the protection layer adjacent to the protection layer openings. The copper bumps are located on the first conductive layer. The passivation layer is located on the protection layer and the copper bumps. At least one of the copper bumps is exposed through a passivation layer opening. The diffusion barrier layer is located on the copper bump that is exposed through the passivation layer opening. The oxidation barrier layer is located on the diffusion barrier layer.
Abstract translation: 电感器结构包括衬底,保护层,图案化的第一导电层,铜凸块,钝化层,扩散阻挡层和氧化阻挡层。 保护层位于基板上。 衬底的接合焊盘分别通过保护层开口露出。 第一导电层位于接合焊盘和与保护层开口相邻的保护层的表面上。 铜凸块位于第一导电层上。 钝化层位于保护层和铜凸块上。 铜凸块中的至少一个通过钝化层开口露出。 扩散阻挡层位于通过钝化层开口暴露的铜凸块上。 氧化阻挡层位于扩散阻挡层上。
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公开(公告)号:US20150054124A1
公开(公告)日:2015-02-26
申请号:US14462490
申请日:2014-08-18
Applicant: XINTEC INC.
Inventor: Wei-Ming LAI , Yu-Wen HU
IPC: H01L49/02 , H01L21/768 , H01L21/3213 , H01L23/00
CPC classification number: H01L28/10 , H01L23/3171 , H01L23/5227 , H01L23/53238 , H01L23/645 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/0391 , H01L2224/03912 , H01L2224/0401 , H01L2224/05084 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/11462 , H01L2224/11474 , H01L2224/11825 , H01L2224/11903 , H01L2224/13083 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1355 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01079 , H01L2924/1206
Abstract: A manufacturing method of an inductor structure includes the following steps. A protection layer is formed on a substrate, such that bond pads of the substrate are respectively exposed form protection layer openings of the protection layer. A conductive layer is formed on the bond pads and the protection layer. A patterned first photoresist layer is formed on the conductive layer. Copper bumps are respectively formed on the conductive layer located in the first photoresist layer openings. A patterned second photoresist layer is formed on the first photoresist layer, such that at least one of the copper bumps is exposed through second photoresist layer opening and the corresponding first photoresist layer opening. A diffusion barrier layer and an oxidation barrier layer are formed on the copper bump. The first and second photoresist layers, and the conductive layer not covered by the copper bumps are removed.
Abstract translation: 电感器结构的制造方法包括以下步骤。 保护层形成在基板上,使得基板的接合焊盘分别从保护层的保护层开口露出。 在接合焊盘和保护层上形成导电层。 在导电层上形成图案化的第一光致抗蚀剂层。 铜凸点分别形成在位于第一光致抗蚀剂层开口中的导电层上。 图案化的第二光致抗蚀剂层形成在第一光致抗蚀剂层上,使得铜凸块中的至少一个通过第二光致抗蚀剂层开口和相应的第一光致抗蚀剂层开口暴露。 在铜凸块上形成扩散阻挡层和氧化阻挡层。 去除第一和第二光致抗蚀剂层以及未被铜凸块覆盖的导电层。
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