公开(公告)号：US10388541B2

公开(公告)日：2019-08-20

申请号：US15098278

申请日：2016-04-13

Applicant: XINTEC INC.

Inventor： Yu-Tung Chen ,  Quan-Qun Su ,  Chuan-Jin Shiu ,  Chien-Hui Chen ,  Hsiao-Lan Yeh ,  Yen-Shih Ho

IPC: H01L21/56 ,  H01L21/687 ,  H01L21/67 ,  H01L23/31 ,  H01L21/768 ,  H01L21/02 ,  H01L23/00

Abstract: A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a rotating part, which the carrier part is mounted on the rotating part to carry a wafer, and the rotating part is configured to rotate with a predetermined axis. The flowing insulating material sprayer is above the wafer chuck and configured to spray a flowing insulating material to the wafer, and the wafer tilting lifting pin is configured to form a first acute angle between the wafer and direction of gravity.

公开(公告)号：US09613904B2

公开(公告)日：2017-04-04

申请号：US15140289

申请日：2016-04-27

Applicant: XINTEC INC.

Inventor： Yu-Tung Chen ,  Chien-Min Lin ,  Chuan-Jin Shiu ,  Chih-Wei Ho ,  Yen-Shih Ho

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/04 ,  H01L23/52 ,  H01L23/528 ,  H01L21/027 ,  H01L23/522 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/5283 ,  H01L21/0271 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/0557

Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

公开(公告)号：US20130187263A1

公开(公告)日：2013-07-25

申请号：US13738082

申请日：2013-01-10

Applicant: Xintec Inc.

Inventor： Po-Shen Lin ,  Chuan-Jin Shiu ,  Bing-Siang Chen ,  Chen-Han Chiang ,  Chien-Hui Chen ,  Hsi-Chien Lin ,  Yen-Shih Ho

IPC: H01L21/78 ,  H01L23/12

CPC classification number: H01L21/78 ,  B81C1/00888 ,  H01L21/561 ,  H01L23/12 ,  H01L23/3114 ,  H01L23/562 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor stacked package is provided. A singulation process is performed on a wafer and a substrate, on which the wafer is stacked. A portion of the wafer on a cutting region is removed, to form a stress concentrated region on an edge of a chip of the wafer. The wafer and the substrate are then cut, and a stress is forced to be concentrated on the edge of the chip of the wafer. As a result, the edge of the chip is warpaged. Therefore, the stress is prevented from extending to the inside of the chip. A semiconductor stacked package is also provided.

Abstract translation: 提供一种制造半导体堆叠封装的方法。 在晶片和基板上进行单晶化处理，晶片和晶片被堆叠在其上。 去除切割区域上的晶片的一部分，以在晶片的芯片的边缘上形成应力集中区域。 然后切割晶片和基板，并且迫使应力集中在晶片的芯片的边缘上。 结果，芯片的边缘变形。 因此，防止了应力延伸到芯片的内部。 还提供半导体堆叠封装。

公开(公告)号：US09230927B2

公开(公告)日：2016-01-05

申请号：US14508989

申请日：2014-10-07

Applicant: XINTEC INC.

Inventor： Chuan-Jin Shiu ,  Tsang-Yu Liu ,  Chih-Wei Ho ,  Shih-Hsing Chan ,  Ching-Jui Chuang

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L21/32139 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05583 ,  H01L2224/056 ,  H01L2224/11821 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend from the upper surface to the lower surface, which the recess exposes the conducting pad. A part of the isolation layer is disposed in the recess with an opening to expose the conducting pad. A conductive layer is formed on the isolation layer and the conductive pad, and a photo-resist layer is spray coated on the conductive layer. The photo-resist layer is exposed and developed to expose the conductive layer, and the conductive layer is etched to form a redistribution layer. After stripping the photo-resist layer, a solder layer is formed on the isolation layer and the redistribution layer.

Abstract translation: 提供了制造晶片级芯片封装的方法。 首先，提供具有两个相邻芯片的晶片，所述晶片具有上表面和下表面，并且每个芯片的一侧在下表面上包括导电焊盘。 凹部和隔离层从上表面延伸到下表面，凹部暴露导电垫。 隔离层的一部分设置在具有开口的凹部中以暴露导电垫。 在隔离层和导电焊盘上形成导电层，并且将光致抗蚀剂层喷涂在导电层上。 曝光和显影光致抗蚀剂层以暴露导电层，并且蚀刻导电层以形成再分布层。 在剥离光刻胶层之后，在隔离层和再分布层上形成焊料层。