公开(公告)号：US09425134B2

公开(公告)日：2016-08-23

申请号：US14339323

申请日：2014-07-23

申请人： XINTEC INC.

发明人： Yen-Shih Ho ,  Tsang-Yu Liu ,  Shu-Ming Chang ,  Yu-Lung Huang ,  Chao-Yen Lin ,  Wei-Luen Suen ,  Chien-Hui Chen

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  G06K9/00 ,  H01L25/065 ,  H01L23/525 ,  H01L23/532

CPC分类号： H01L23/49805 ,  G06K9/00006 ,  G06K9/00053 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A chip package is provided. The chip package includes a chip having an upper surface, a lower surface and a sidewall. The chip includes a sensing region or device region and a signal pad region adjacent to the upper surface. A shallow recess structure is located outside of the signal pad region and extends from the upper surface toward the lower surface along the sidewall. The shallow recess structure has at least a first recess and a second recess under the first recess. A redistribution layer is electrically connected to the signal pad region and extends into the shallow recess structure. A first end of a wire is located in the shallow recess structure and is electrically connected to the redistribution layer. A second end of the wire is used for external electrical connection. A method for forming the chip package is also provided.

摘要翻译： 提供芯片封装。 芯片封装包括具有上表面，下表面和侧壁的芯片。 芯片包括感测区域或器件区域以及与上表面相邻的信号焊盘区域。 浅凹陷结构位于信号垫区域的外侧，并且沿着侧壁从上表面向下表面延伸。 浅凹部结构在第一凹部下方具有至少第一凹部和第二凹部。 再分配层电连接到信号焊盘区域并延伸到浅凹陷结构中。 电线的第一端位于浅凹陷结构中，并且电连接到再分配层。 电线的第二端用于外部电气连接。 还提供了一种用于形成芯片封装的方法。

公开(公告)号：US08778707B2

公开(公告)日：2014-07-15

申请号：US14024564

申请日：2013-09-11

申请人： Xintec Inc.

发明人： Shang-Yi Wu ,  Chien-Hui Chen

IPC分类号： H01L21/00

CPC分类号： H01L33/60 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01S5/02236 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A method for fabricating a silicon submount for LED packaging. A silicon substrate is provided. A reflection layer is formed on the silicon substrate. Portions of the reflection layer and the silicon substrate are removed to form openings. A wafer backside grinding process is carried out to thin the silicon substrate thereby turning the openings into through silicon vias. An insulating layer is then deposited to cover the reflection layer and the silicon substrate. A seed layer is formed on the insulating layer. A resist pattern is then formed on the seed layer. A metal layer is formed on the seed layer not covered by the resist pattern. The resist pattern is then stripped. The seed layer not covered by the metal layer is then removed.

摘要翻译： 一种用于制造用于LED封装的硅基座的方法。 提供硅衬底。 在硅衬底上形成反射层。 去除反射层和硅衬底的部分以形成开口。 进行晶片背面研磨处理以使硅衬底变薄，从而将开口转变成通过硅通孔。 然后沉积绝缘层以覆盖反射层和硅衬底。 种子层形成在绝缘层上。 然后在种子层上形成抗蚀剂图案。 在未被抗蚀剂图案覆盖的种子层上形成金属层。 然后剥离抗蚀剂图案。 然后除去未被金属层覆盖的籽晶层。

公开(公告)号：US10388541B2

公开(公告)日：2019-08-20

申请号：US15098278

申请日：2016-04-13

申请人： XINTEC INC.

发明人： Yu-Tung Chen ,  Quan-Qun Su ,  Chuan-Jin Shiu ,  Chien-Hui Chen ,  Hsiao-Lan Yeh ,  Yen-Shih Ho

IPC分类号： H01L21/56 ,  H01L21/687 ,  H01L21/67 ,  H01L23/31 ,  H01L21/768 ,  H01L21/02 ,  H01L23/00

摘要： A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a rotating part, which the carrier part is mounted on the rotating part to carry a wafer, and the rotating part is configured to rotate with a predetermined axis. The flowing insulating material sprayer is above the wafer chuck and configured to spray a flowing insulating material to the wafer, and the wafer tilting lifting pin is configured to form a first acute angle between the wafer and direction of gravity.

公开(公告)号：US09209124B2

公开(公告)日：2015-12-08

申请号：US13964999

申请日：2013-08-12

申请人： XINTEC INC.

发明人： Yu-Lung Huang ,  Chao-Yen Lin ,  Wei-Luen Suen ,  Chien-Hui Chen

IPC分类号： H01L23/498 ,  H01L21/768 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/58 ,  H01L23/525 ,  H01L29/06 ,  H01L21/683

CPC分类号： H01L23/585 ,  H01L21/283 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/768 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/49838 ,  H01L23/525 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/06165 ,  H01L2224/06167 ,  H01L2224/1302 ,  H01L2224/131 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24226 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： An embodiment of the invention provides a chip package including a semiconductor substrate having a first surface and a second surface opposite thereto. A conducting pad is located on the first surface. A side recess is on at least a first side of the semiconductor substrate, wherein the side recess extends from the first surface toward the second surface and across the entire length of the first side. A conducting layer is located on the first surface and electrically connected to the conducting pad, wherein the conducting layer extends to the side recess.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括具有第一表面和与其相对的第二表面的半导体衬底。 导电垫位于第一表面上。 侧凹部位于半导体衬底的至少第一侧上，其中侧凹部从第一表面朝向第二表面延伸并跨越第一侧的整个长度。 导电层位于第一表面上并电连接到导电焊盘，其中导电层延伸到侧凹槽。

公开(公告)号：US08951836B2

公开(公告)日：2015-02-10

申请号：US14214389

申请日：2014-03-14

申请人： Xintec Inc.

发明人： Yu-Lin Yen ,  Chien-Hui Chen ,  Tsang-Yu Liu ,  Long-Sheng Yeou

IPC分类号： H01L21/44 ,  H01L21/768 ,  B81B7/00 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/13025 ,  H01L2224/9202 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for forming a chip package, in which a substrate has a plurality of conducting pads located below its lower surface, and a dielectric layer located between the conducting pads. A hole is formed extending from the upper surface of the substrate towards the conducting pads. After the hole is formed, a trench is formed extending from the upper surface towards the lower surface of the substrate, with the trench connecting with the hole. An insulating layer is formed on a sidewall of the trench and a sidewall and a bottom of the hole, and a portion of the insulating layer and a portion of the dielectric layer are removed to expose a portion of the conducting pads. A conducting layer is formed on the sidewall of the trench and the sidewall and the bottom of the hole, electrically contacting with the conducting pads.

摘要翻译： 一种用于形成芯片封装的方法，其中衬底具有位于其下表面下方的多个导电焊盘以及位于导电焊盘之间的电介质层。 形成从衬底的上表面朝向导电垫延伸的孔。 在形成孔之后，形成从衬底的上表面向下表面延伸的沟槽，沟槽与孔连接。 绝缘层形成在沟槽的侧壁和孔的侧壁和底部上，绝缘层的一部分和电介质层的一部分被去除以暴露导电垫的一部分。 导电层形成在沟槽的侧壁和孔的侧壁和底部，与导电垫电接触。

公开(公告)号：US09275963B2

公开(公告)日：2016-03-01

申请号：US14199640

申请日：2014-03-06

申请人： XINTEC INC.

发明人： Yung-Tai Tsai ,  Shu-Ming Chang ,  Chun-Wei Chang ,  Chien-Hui Chen ,  Tsang-Yu Liu ,  Yen-Shih Ho

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L21/78

CPC分类号： H01L24/05 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/3192 ,  H01L24/03 ,  H01L2224/02371 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00014

摘要： A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

摘要翻译： 半导体结构包括晶片，至少一个非金属氧化物层，焊盘，钝化层，隔离层和导电层。 晶片具有连接在第二和第三表面之间的第一表面，第二表面，第三表面，第一阶段差异表面以及连接在第一和第三表面之间的第二阶段差异表面。 非金属氧化物层位于晶片的第一表面上。 垫位于非金属氧化物层上并电连接到晶片。 钝化层位于非金属氧化物层上。 隔离层位于钝化层，非金属氧化物层，晶片的第一，第二和第三表面以及晶片的第一和第二级差分表面上。 导电层位于隔离层上并电接触焊盘。

公开(公告)号：US08963312B2

公开(公告)日：2015-02-24

申请号：US14339341

申请日：2014-07-23

申请人： Xintec Inc.

发明人： Yen-Shih Ho ,  Tsang-Yu Liu ,  Shu-Ming Chang ,  Yu-Lung Huang ,  Chao-Yen Lin ,  Wei-Luen Suen ,  Chien-Hui Chen

IPC分类号： H01L23/02 ,  H01L23/48 ,  H01L21/44 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/49 ,  G06K9/00053 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06135 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/43 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A stacked chip package including a device substrate having an upper surface, a lower surface and a sidewall is provided. The device substrate includes a sensing region or device region, a signal pad region and a shallow recess structure extending from the upper surface toward the lower surface along the sidewall. A redistribution layer is electrically connected to the signal pad region and extends into the shallow recess structure. A wire has a first end disposed in the shallow recess structure and electrically connected to the redistribution layer, and a second end electrically connected to a first substrate and/or a second substrate disposed under the lower surface. A method for forming the stacked chip package is also provided.

摘要翻译： 提供了包括具有上表面，下表面和侧壁的器件衬底的堆叠芯片封装。 器件衬底包括感测区域或器件区域，信号焊盘区域和沿着侧壁从上表面向下表面延伸的浅凹陷结构。 再分配层电连接到信号焊盘区域并延伸到浅凹陷结构中。 电线具有设置在浅凹陷结构中并电连接到再分布层的第一端，以及电连接到设置在下表面下方的第一基板和/或第二基板的第二端。 还提供了一种用于形成堆叠芯片封装的方法。

公开(公告)号：US08952501B2

公开(公告)日：2015-02-10

申请号：US13950101

申请日：2013-07-24

申请人： Xintec Inc.

发明人： Yu-Lung Huang ,  Chao-Yen Lin ,  Wei-Luen Suen ,  Chien-Hui Chen

IPC分类号： H01L29/06 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/683

CPC分类号： H01L23/49805 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L24/95 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An embodiment of the invention provides a chip package which includes: a semiconductor substrate having an upper surface and a lower surface; a device region or sensing region defined in the semiconductor substrate; a conducting pad located on the upper surface of the semiconductor substrate; at least two recesses extending from the upper surface towards the lower surface of the semiconductor substrate, wherein sidewalls and bottoms of the recesses together form a sidewall of the semiconductor substrate; a conducting layer electrically connected to the conducting pad and extending from the upper surface of the semiconductor substrate to the sidewall of the semiconductor substrate; and an insulating layer located between the conducting layer and the semiconductor substrate.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：具有上表面和下表面的半导体衬底; 限定在所述半导体衬底中的器件区域或感测区域; 导电焊盘，位于所述半导体衬底的上表面上; 至少两个从所述半导体衬底的上表面向下表面延伸的凹槽，其中所述凹槽的侧壁和底部一起形成所述半导体衬底的侧壁; 导电层，电连接到导电焊盘并从半导体衬底的上表面延伸到半导体衬底的侧壁; 以及位于导电层和半导体衬底之间的绝缘层。

公开(公告)号：US09305843B2

公开(公告)日：2016-04-05

申请号：US14596185

申请日：2015-01-13

申请人： XINTEC INC.

发明人： Bing-Siang Chen ,  Chien-Hui Chen ,  Shu-Ming Chang ,  Tsang-Yu Liu ,  Yen-Shih Ho

IPC分类号： H01L23/48 ,  H01L21/00 ,  H01L21/44 ,  H01L21/78 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L21/78 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06582 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An embodiment of the invention provides a chip package which includes: a first chip; a second chip disposed on the first chip, wherein a side surface of the second chip is a chemically-etched surface; and a bonding bulk disposed between the first chip and the second chip such that the first chip and the second chip are bonded with each other.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：第一芯片; 设置在所述第一芯片上的第二芯片，其中所述第二芯片的侧表面是化学蚀刻表面; 以及设置在所述第一芯片和所述第二芯片之间的结合体，使得所述第一芯片和所述第二芯片彼此结合。

公开(公告)号：US09184092B2

公开(公告)日：2015-11-10

申请号：US14214408

申请日：2014-03-14

申请人： XINTEC INC.

发明人： Yu-Lin Yen ,  Chien-Hui Chen ,  Tsang-Yu Liu ,  Long-Sheng Yeou

IPC分类号： H01L21/44 ,  H01L21/768 ,  B81B7/00 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68377 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for forming a chip package, by providing a substrate having a plurality of conducting pads below a lower surface, and a dielectric layer located between the conducting pads, forming a recess in an upper surface of the substrate, forming a hole extending through the bottom of the recess, forming an insulating layer on the sidewall of the recess and in the hole, exposing a portion of the conducting pads through the insulating layer, and forming a conducting layer on the insulating layer and through the hole to contact with the conducting pads.

摘要翻译： 一种用于形成芯片封装的方法，通过提供在下表面下方具有多个导电焊盘的衬底以及位于导电焊盘之间的电介质层，在衬底的上表面中形成凹陷，形成贯穿 在所述凹部的所述侧壁上形成绝缘层，并且在所述孔中形成绝缘层，使所述导电焊盘的一部分通过所述绝缘层露出，并且在所述绝缘层上形成导电层，并且穿过所述孔与所述导电体 垫