公开(公告)号：US20230369288A1

公开(公告)日：2023-11-16

申请号：US18359890

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Chih Chen ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Hung-Chun Cho

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538 ,  H01L21/56

CPC分类号： H01L25/0655 ,  H01L23/3128 ,  H01L21/4857 ,  H01L24/18 ,  H01L23/5383 ,  H01L24/13 ,  H01L21/56 ,  H01L2224/11821 ,  H01L2224/11822 ,  H01L2224/1369

摘要： A semiconductor package includes a semiconductor die and a redistribution structure. The semiconductor die is laterally surrounded by a molding compound, and the semiconductor die has a conductive pillar and a complex compound sheath sandwiched between the conductive pillar and the molding compound. The redistribution structure is electrically connected with the semiconductor die and comprises a first via portion at a first side of the redistribution structure and a second via portion at a second side of the redistribution structure, and a base angle of the second via portion is greater than a base angle of the first via portion.

公开(公告)号：US09230927B2

公开(公告)日：2016-01-05

申请号：US14508989

申请日：2014-10-07

申请人： XINTEC INC.

发明人： Chuan-Jin Shiu ,  Tsang-Yu Liu ,  Chih-Wei Ho ,  Shih-Hsing Chan ,  Ching-Jui Chuang

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L21/32139 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05583 ,  H01L2224/056 ,  H01L2224/11821 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

摘要： A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend from the upper surface to the lower surface, which the recess exposes the conducting pad. A part of the isolation layer is disposed in the recess with an opening to expose the conducting pad. A conductive layer is formed on the isolation layer and the conductive pad, and a photo-resist layer is spray coated on the conductive layer. The photo-resist layer is exposed and developed to expose the conductive layer, and the conductive layer is etched to form a redistribution layer. After stripping the photo-resist layer, a solder layer is formed on the isolation layer and the redistribution layer.

摘要翻译： 提供了制造晶片级芯片封装的方法。 首先，提供具有两个相邻芯片的晶片，所述晶片具有上表面和下表面，并且每个芯片的一侧在下表面上包括导电焊盘。 凹部和隔离层从上表面延伸到下表面，凹部暴露导电垫。 隔离层的一部分设置在具有开口的凹部中以暴露导电垫。 在隔离层和导电焊盘上形成导电层，并且将光致抗蚀剂层喷涂在导电层上。 曝光和显影光致抗蚀剂层以暴露导电层，并且蚀刻导电层以形成再分布层。 在剥离光刻胶层之后，在隔离层和再分布层上形成焊料层。

公开(公告)号：US11791313B2

公开(公告)日：2023-10-17

申请号：US17884524

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Chih Chen ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao ,  Hung-Chun Cho

IPC分类号： H01L23/495 ,  H01L25/065 ,  H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48

CPC分类号： H01L25/0655 ,  H01L21/4857 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/5383 ,  H01L24/13 ,  H01L24/18 ,  H01L2224/11821 ,  H01L2224/11822 ,  H01L2224/1369

摘要： A semiconductor package includes a semiconductor die and a redistribution structure. The semiconductor die is laterally surrounded by a molding compound, and the semiconductor die has a conductive pillar and a complex compound sheath sandwiched between the conductive pillar and the molding compound. The redistribution structure is electrically connected with the semiconductor die and comprises a first via portion at a first side of the redistribution structure and a second via portion at a second side of the redistribution structure, and a base angle of the second via portion is greater than a base angle of the first via portion.

公开(公告)号：US20160020160A1

公开(公告)日：2016-01-21

申请号：US14337977

申请日：2014-07-22

申请人： International Business Machines Corporation

发明人： Daniel J. BUVID ,  Eric J. CAMPBELL ,  Tyler JANDT ,  Joseph KUCZYNSKI

IPC分类号： H01L23/31 ,  H01L23/367

CPC分类号： H01L23/3107 ,  H01L23/29 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/315 ,  H01L23/3171 ,  H01L23/367 ,  H01L23/373 ,  H01L23/44 ,  H01L23/473 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05009 ,  H01L2224/11821 ,  H01L2224/11823 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/742 ,  H01L2224/8192 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15313 ,  H01L2924/16151 ,  H01L2924/16251 ,  H01L2924/181 ,  H05K1/0203 ,  H05K7/20236 ,  H05K2201/064 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01048 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues.

摘要翻译： 公开了采用具有疏水涂层的半导体芯片的器件以及相关的冷却方法。 器件可以包括通过电接触元件电耦合到衬底的至少一个半导体管芯。 在操作期间，半导体管芯和电接触元件产生热量。 通过向半导体管芯和电接触元件施加疏水涂层，可以使用冷却流体来直接冷却半导体管芯和电接触元件，以将这些部件保持在温度范围内并且没有电短路和腐蚀。 以这种方式，半导体管芯和相关联的电接触元件可以被冷却以避免产生有害的局部热点和温度敏感的半导体性能问题。

公开(公告)号：US09220183B1

公开(公告)日：2015-12-22

申请号：US14332690

申请日：2014-07-16

申请人： International Business Machines Corporation

发明人： Daniel J. Buvid ,  Eric J. Campbell ,  Tyler Jandt ,  Joseph Kuczynski

IPC分类号： H01L21/02 ,  H01L21/64 ,  H01L23/36 ,  H01L23/29 ,  H05K7/20 ,  H01L25/00 ,  H01L25/065 ,  H01L23/31 ,  H01L23/473 ,  H01L23/00 ,  H01L23/48 ,  H01L23/367 ,  H05K1/02

CPC分类号： H01L23/3107 ,  H01L23/29 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/315 ,  H01L23/3171 ,  H01L23/367 ,  H01L23/373 ,  H01L23/44 ,  H01L23/473 ,  H01L23/564 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05009 ,  H01L2224/11821 ,  H01L2224/11823 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/742 ,  H01L2224/8192 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15313 ,  H01L2924/16151 ,  H01L2924/16251 ,  H01L2924/181 ,  H05K1/0203 ,  H05K7/20236 ,  H05K2201/064 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01048 ,  H01L2224/85399 ,  H01L2224/05599

摘要： Devices employing semiconductor die having hydrophobic coatings, and related cooling methods are disclosed. A device may include at least one semiconductor die electrically coupled to a substrate by electrical contact elements. During operation the semiconductor die and the electrical contact elements generate heat. By applying hydrophobic coatings to the semiconductor die and the electrical contact elements, a cooling fluid may be used to directly cool the semiconductor die and the electrical contact elements to maintain these components within temperature limits and free from electrical shorting and corrosion. In this manner, the semiconductor die and associated electrical contact elements may be cooled to avoid the creation of damaging localized hot spots and temperature-sensitive semiconductor performance issues.

摘要翻译： 公开了采用具有疏水涂层的半导体芯片的器件以及相关的冷却方法。 器件可以包括通过电接触元件电耦合到衬底的至少一个半导体管芯。 在操作期间，半导体管芯和电接触元件产生热量。 通过向半导体管芯和电接触元件施加疏水涂层，可以使用冷却流体来直接冷却半导体管芯和电接触元件，以将这些部件保持在温度范围内并且没有电短路和腐蚀。 以这种方式，半导体管芯和相关联的电接触元件可以被冷却以避免产生有害的局部热点和温度敏感的半导体性能问题。

公开(公告)号：US09397063B2

公开(公告)日：2016-07-19

申请号：US14707465

申请日：2015-05-08

申请人： Tessera, Inc.

发明人： Belgacem Haba

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L21/50 ,  H01L23/52 ,  B82Y40/00

CPC分类号： H01L24/17 ,  B82Y40/00 ,  H01L21/4853 ,  H01L21/50 ,  H01L23/49811 ,  H01L23/52 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/116 ,  H01L2224/1182 ,  H01L2224/11821 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13644 ,  H01L2224/13794 ,  H01L2224/13911 ,  H01L2224/13944 ,  H01L2224/13947 ,  H01L2224/16057 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/29111 ,  H01L2224/73104 ,  H01L2224/81026 ,  H01L2224/81099 ,  H01L2224/81143 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15321 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  Y10S977/773 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.

公开(公告)号：US20140212678A1

公开(公告)日：2014-07-31

申请号：US14004204

申请日：2012-04-16

申请人： Katsumori Taniguro

发明人： Katsumori Taniguro

IPC分类号： B23K3/06 ,  B23K1/20 ,  B23K3/08

CPC分类号： B23K3/0607 ,  B23K1/0016 ,  B23K1/08 ,  B23K1/20 ,  B23K1/203 ,  B23K3/0646 ,  B23K3/0669 ,  B23K3/082 ,  B23K35/262 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/741 ,  H01L24/742 ,  H01L2224/03312 ,  H01L2224/03418 ,  H01L2224/036 ,  H01L2224/0381 ,  H01L2224/03821 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/0569 ,  H01L2224/11312 ,  H01L2224/116 ,  H01L2224/11821 ,  H01L2224/13111 ,  H01L2224/1369 ,  H01L2224/741 ,  H01L2924/381 ,  H05K3/0085 ,  H05K3/282 ,  H05K3/3468 ,  H05K2203/081 ,  H05K2203/122 ,  H05K2203/1366 ,  H05K2203/1518 ,  Y10T428/31678 ,  H01L2224/1141 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01051 ,  H01L2224/03

摘要： Provided are a soldering device and method which allow for oldering at low cost with high yield and high reliability. To solve the above problems, the soldering device has: a first processing section that immerses workpiece member 10 having copper electrode 2 in organic fatty acid-containing solution, and horizontally move immersed workpiece member 10 in organic fatty acid-containing solution 31; a second processing section having ejection unit 33 to spray a jet stream of molten solder 5a to workpiece member 10 while pulling out workpiece member 10 processed in the first processing section to space section 24 that has a pressurized steam atmosphere and is provided above organic fatty acid-containing solution 31; a third processing section having ejection unit 34 to spray organic fatty acid-containing solution 31 to excess molten solder 5a on workpiece member 10 for removal while pulling down workpiece member 10 processed in the second processing section after horizontally moving in space section 24; and a fourth processing section that picks up workpiece member 10 processed in the third processing section by pulling out from organic fatty acid-containing solution 31 after horizontally moving in organic fatty acid-containing solution 31.

摘要翻译： 提供了一种能够以低成本，高产率和高可靠性老化的焊接装置和方法。 为了解决上述问题，焊接装置具有：将具有铜电极2的工件10浸渍在含有有机脂肪酸的溶液中的水平移动浸渍的有机脂肪酸溶液31中的浸渍工件10的第一处理部， 第二处理部分具有喷射单元33，以将熔融焊料5a的喷射流喷射到工件10上，同时将在第一处理部分中加工的工件10拉出到具有加压蒸汽气氛的空间部分24并且设置在有机脂肪酸之上 含有溶液31; 具有喷射单元34的喷射单元34，用于在空间部24中水平移动之后，将在第二处理部中处理的工件10拉下的同时，将含有机脂肪酸的溶液31喷射到工件10上的多余的熔融焊料5a以进行除去; 以及第四处理部，其通过在含有有机脂肪酸的溶液31中水平移动之后从含有机脂肪酸的溶液31中拉出而拾取在第三处理部中处理的工件10。

公开(公告)号：US08580607B2

公开(公告)日：2013-11-12

申请号：US12844463

申请日：2010-07-27

申请人： Belgacem Haba

发明人： Belgacem Haba

IPC分类号： H01L21/00

CPC分类号： H01L24/17 ,  B82Y40/00 ,  H01L21/4853 ,  H01L21/50 ,  H01L23/49811 ,  H01L23/52 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/116 ,  H01L2224/1182 ,  H01L2224/11821 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13644 ,  H01L2224/13794 ,  H01L2224/13911 ,  H01L2224/13944 ,  H01L2224/13947 ,  H01L2224/16057 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/29111 ,  H01L2224/73104 ,  H01L2224/81026 ,  H01L2224/81099 ,  H01L2224/81143 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15321 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  Y10S977/773 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.

公开(公告)号：US20110226841A1

公开(公告)日：2011-09-22

申请号：US13131818

申请日：2008-11-27

申请人： Jun Wei ,  Xiao Fang Ang ,  Chee Cheong Wong ,  Zhong Chen

发明人： Jun Wei ,  Xiao Fang Ang ,  Chee Cheong Wong ,  Zhong Chen

IPC分类号： B23K31/02 ,  B23K20/02 ,  B32B15/04 ,  B32B5/16 ,  C09D7/12 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L21/2007 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11821 ,  H01L2224/11822 ,  H01L2224/11823 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13793 ,  H01L2224/13824 ,  H01L2224/13839 ,  H01L2224/13844 ,  H01L2224/13847 ,  H01L2224/13855 ,  H01L2224/13886 ,  H01L2224/1389 ,  H01L2224/13893 ,  H01L2224/1607 ,  H01L2224/16145 ,  H01L2224/81099 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81207 ,  H01L2224/8182 ,  H01L2225/06513 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3512 ,  H01L2924/36 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/31678 ,  H01L2924/01074 ,  H01L2924/00

摘要： A method for forming direct metal-metal bond between metallic surfaces is disclosed. The method comprises depositing a first nanostructured organic coating (118) on a first metallic surface (116) to form a first passivation layer thereon, the first nanostructured organic coating (118) comprising an organic phase with nanoparticles dispersed within the organic phase, contacting the first nanostructured organic coating (118) with a second metallic surface (126), and applying on the first and second metallic surfaces (116, 126) at least a bonding temperature of at least room temperature and/or a bonding pressure for a bonding period to bond the first and second metallic surfaces (116, 126) thereby forming the direct metal-metal bond therebetween. A second nanostructured organic coating (128) comprising an organic phase with nanoparticles dispersed within the organic phase may also be deposited on the second metallic surface (126).

摘要翻译： 公开了在金属表面之间形成直接金属 - 金属结合的方法。 该方法包括在第一金属表面（116）上沉积第一纳米结构化有机涂层（118）以在其上形成第一钝化层，第一纳米结构有机涂层（118）包含有机相，纳米颗粒分散在有机相内， 具有第二金属表面（126）的第一纳米结构有机涂层（118），并且在第一和第二金属表面（116,126）上至少施加至少室温的粘结温度和/或粘合时间段的粘合压力 以接合第一和第二金属表面（116,126），从而在它们之间形成直接金属 - 金属粘合。 包含分散在有机相内的纳米颗粒的有机相的第二纳米结构有机涂层（128）也可沉积在第二金属表面（126）上。

公开(公告)号：US07629202B2

公开(公告)日：2009-12-08

申请号：US11532551

申请日：2006-09-18

申请人： Jonas R Weiss ,  Thomas E. Morf ,  Heike E Riel

发明人： Jonas R Weiss ,  Thomas E. Morf ,  Heike E Riel

IPC分类号： H10L21/44

CPC分类号： H01L23/60 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/10126 ,  H01L2224/11821 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/13109 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13171 ,  H01L2224/13172 ,  H01L2224/13184 ,  H01L2224/13187 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13601 ,  H01L2224/13617 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13687 ,  H01L2224/1369 ,  H01L2224/165 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30205 ,  H01L2924/04941 ,  H01L2924/01003 ,  H01L2924/0535 ,  H01L2924/07812

摘要： A method and apparatus for providing ESD protection of an integrated circuit using a temporary conductive coating. The method deposits a temporary conductive coating upon a chip die between contacts to be protected such that a conductive path is created between contacts, provides a carrier substrate that is then bonded to the chip die and then the conductive coating is deactivated to ready the device for use. The deactivation of the conductive coating may involve physical removal of the conductive coating (or a portion thereof), oxidation of the conductive coating to form a non-conductive coating, or some other process to interrupt the conductive path between contacts. The apparatus of the invention is a chip having a temporary conductive coating deposited thereon to protect the integrated circuit from ESD events.

摘要翻译： 一种用于使用临时导电涂层提供集成电路的ESD保护的方法和装置。 该方法将待保护的触点之间的临时导电涂层沉积在芯片芯片上，使得在触点之间产生导电路径，提供随后结合到芯片模具的载体基板，然后导电涂层停用以准备该装置 使用。 导电涂层的失活可以涉及导电涂层（或其一部分）的物理去除，导电涂层的氧化以形成非导电涂层，或者一些其它中断接触之间的导电路径的过程。 本发明的装置是其上沉积有临时导电涂层的芯片，以保护集成电路免受ESD事件的影响。