摘要:
In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.
摘要:
A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.
摘要:
In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.
摘要:
A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.
摘要:
A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.
摘要:
A perpendicular magnetic recording medium includes a substrate, an underlayer formed on the substrate, and containing at least one element selected from the group A consisting of Pt, Pd, Rh, Ag, Au, Ir and Fe, and at least one element or compound selected from the group B consisting of C, Ta, Mo, W, Nb, Zr, Hf, V, Mg, Al, Zn, Sn, In, Bi, Pb, Cd, SiO2, MgO, Al2O3, TaC, TiC, TaN, TiN, B2O3, ZrO2, In2O3 and SnO2, and a magnetic layer formed on the underlayer, containing at least one element selected from the group consisting of Fe, Co, and Ni, and at least one element selected from the group consisting of Pt, Pd, Au and Ir, and containing crystal grains having an L10 structure.
摘要翻译:垂直磁记录介质包括衬底,形成在衬底上的底层,并且包含选自由Pt,Pd,Rh,Ag,Au,Ir和Fe组成的组A中的至少一种元素,以及至少一种元素或化合物 选自由C,Ta,Mo,W,Nb,Zr,Hf,V,Mg,Al,Zn,Sn,In,Bi,Pb,Cd,SiO 2,MgO组成的组B ,Al 2 O 3,TaC,TiC,TaN,TiN,B 2 O 3 3,ZrO 2 sub> 3 sub> 3< 2>和在底层上形成的含有至少一个元素的磁性层 选自Fe,Co和Ni中的至少一种元素,以及选自Pt,Pd,Au和Ir中的至少一种元素,并且含有具有L 1 O 3结构的晶粒。
摘要:
A magnetic recording media has recording cells formed of two-dimensionally arrayed magnetic material, a nonmagnetic layer surrounding the recording cells, an adhesive film formed on each of the recording cells, and a lubricant directly adhered to the adhesive film.
摘要:
There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.
摘要:
A magnetic recording media has recording cells formed of two-dimensionally arrayed magnetic material, a nonmagnetic layer surrounding the recording cells, an adhesive film formed on each of the recording cells, and a lubricant directly adhered to the adhesive film.
摘要:
The present invention provides a pattern forming method using phase separation structure of self-assembling block copolymer and minimizing variations in pattern. A substrate having groove structure pre-formed thereon, is coated with a solution of the block copolymer comprising at least one block having a mesogen group. The block copolymer is caused to self-assemble in the groove to form block copolymer assemblies, which are regularly arrayed. The invention also relates to a processing method of processing a substrate by the use of the pattern obtained by the pattern forming method as a template.