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    Magnetic recording medium
    1.
    发明授权
    Magnetic recording medium 有权
    磁记录介质

    公开(公告)号：US07740961B2

    公开(公告)日：2010-06-22

    申请号：US11434519

    申请日：2006-05-16

    申请人： Hiroyuki Hieda ,  Naoko Kihara ,  Yoshitaka Yanagita

    发明人： Hiroyuki Hieda ,  Naoko Kihara ,  Yoshitaka Yanagita

    IPC分类号： G11B5/66

    CPC分类号： G11B5/855

    摘要： A magnetic recording media has recording cells formed of two-dimensionally arrayed magnetic material, a nonmagnetic layer surrounding the recording cells, an adhesive film formed on each of the recording cells, and a lubricant directly adhered to the adhesive film.

    摘要翻译： 磁记录介质具有由二维排列的磁性材料形成的记录单元，围绕记录单元的非磁性层，形成在每个记录单元上的粘合膜，以及直接附着在粘合膜上的润滑剂。

    Magnetic recording media
    2.
    发明申请
    Magnetic recording media 有权
    磁记录媒体

    公开(公告)号：US20060257694A1

    公开(公告)日：2006-11-16

    申请号：US11434519

    申请日：2006-05-16

    申请人： Hiroyuki Hieda ,  Naoko Kihara ,  Yoshitaka Yanagita

    发明人： Hiroyuki Hieda ,  Naoko Kihara ,  Yoshitaka Yanagita

    IPC分类号： G11B5/64

    CPC分类号： G11B5/855

    摘要： A magnetic recording media has recording cells formed of two-dimensionally arrayed magnetic material, a nonmagnetic layer surrounding the recording cells, an adhesive film formed on each of the recording cells, and a lubricant directly adhered to the adhesive film.

    摘要翻译： 磁记录介质具有由二维排列的磁性材料形成的记录单元，围绕记录单元的非磁性层，形成在每个记录单元上的粘合膜，以及直接附着在粘合膜上的润滑剂。

    Method of forming a pattern
    3.
    发明申请
    Method of forming a pattern 有权
    形成图案的方法

    公开(公告)号：US20090078673A1

    公开(公告)日：2009-03-26

    申请号：US12222916

    申请日：2008-08-19

    申请人： Naoko Kihara ,  Hiroyuki Hieda ,  Yoshiyuki Kamata

    发明人： Naoko Kihara ,  Hiroyuki Hieda ,  Yoshiyuki Kamata

    IPC分类号： C25F3/14

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855

    摘要： A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.

    摘要翻译： 提供了图案形成方法，其包括在基底上形成含有至少PS和PEO的二嵌段共聚物组合物层，使该层相分离以获得相分离层，由此形成易于 蚀刻区域由PS构成并且具有在第一方向上延伸的圆柱形或层状结构，在相分离层上形成刻印抗蚀剂层，使压印抗蚀剂层压印以在压印抗蚀剂层上形成不均匀图案，该不均匀图案包括 在与第一方向相交的第二方向上延伸的突起和凹部，从压印抗蚀剂层选择性地去除凹部，从而仅留下突起，并且同时从相分离层选择性地去除PS 获得含有PEO的蚀刻电阻图案，并且使用不仅突起而且还具有抗蚀刻性，作为掩模来蚀刻基板 ve模式。

    Method of forming a pattern
    4.
    发明授权
    Method of forming a pattern 有权
    形成图案的方法

    公开(公告)号：US08105952B2

    公开(公告)日：2012-01-31

    申请号：US12222916

    申请日：2008-08-19

    申请人： Naoko Kihara ,  Hiroyuki Hieda ,  Yoshiyuki Kamata

    发明人： Naoko Kihara ,  Hiroyuki Hieda ,  Yoshiyuki Kamata

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855

    摘要： A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.

    摘要翻译： 提供了图案形成方法，其包括在基底上形成含有至少PS和PEO的二嵌段共聚物组合物层，使该层相分离以获得相分离层，由此形成易于 蚀刻区域由PS构成并且具有在第一方向上延伸的圆柱形或层状结构，在相分离层上形成刻印抗蚀剂层，使压印抗蚀剂层压印以在压印抗蚀剂层上形成不均匀图案，该不均匀图案包括 在与第一方向相交的第二方向上延伸的突起和凹部，从压印抗蚀剂层选择性地去除凹部，从而仅留下突起，并且同时从相分离层选择性地去除PS 获得含有PEO的蚀刻电阻图案，并且使用不仅突起而且还具有抗蚀刻性，作为掩模来蚀刻基板 ve模式。

    Method for pattern formation
    7.
    发明授权
    Method for pattern formation 有权
    图案形成方法

    公开(公告)号：US07931819B2

    公开(公告)日：2011-04-26

    申请号：US11727158

    申请日：2007-03-23

    申请人： Naoko Kihara ,  Hiroyuki Hieda

    发明人： Naoko Kihara ,  Hiroyuki Hieda

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3086 ,  B82Y10/00 ,  Y10S438/942

    摘要： There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.

    摘要翻译： 提供了一种形成图案的方法，其包括将包含嵌段共聚物，硅化合物和溶剂的组合物涂布到物体上以形成该物质层的步骤， 所述组合物层自组织所述嵌段共聚物以引起相分离成其中所述硅化合物定位的第一相，通过热处理或/和氧等离子体处理具有较高的耐蚀刻性，以及第二相，其包含 聚合物相，并且通过热处理或/和氧等离子体处理具有较低的耐腐蚀性，从而形成具有精细图案的图案层，以及使用由此形成的图案层作为掩模蚀刻该物体的步骤。

    Pattern forming method and method of processing a structure by use of same
    10.
    发明授权
    Pattern forming method and method of processing a structure by use of same 有权
    图案形成方法及其结构的处理方法

    公开(公告)号：US07618675B2

    公开(公告)日：2009-11-17

    申请号：US11248587

    申请日：2005-10-13

    申请人： Hiroyuki Hieda ,  Naoko Kihara ,  Katsuyuki Naito

    发明人： Hiroyuki Hieda ,  Naoko Kihara ,  Katsuyuki Naito

    IPC分类号： B05D1/34

    CPC分类号： G11B5/855

    摘要： The present invention provides a pattern forming method using phase separation structure of self-assembling block copolymer and minimizing variations in pattern. A substrate having groove structure pre-formed thereon, is coated with a solution of the block copolymer comprising at least one block having a mesogen group. The block copolymer is caused to self-assemble in the groove to form block copolymer assemblies, which are regularly arrayed. The invention also relates to a processing method of processing a substrate by the use of the pattern obtained by the pattern forming method as a template.

    摘要翻译： 本发明提供使用自组装嵌段共聚物的相分离结构并使图案变化最小化的图案形成方法。 在其上预先形成有凹槽结构的基底上涂覆有包含至少一个具有介晶基团的嵌段的嵌段共聚物溶液。 导致嵌段共聚物在槽中自组装形成嵌段共聚物组合物，其被规则地排列。 本发明还涉及通过使用通过图案形成方法获得的图案作为模板来处理基板的处理方法。