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1.发明申请Muscular Strength Acquiring Method and Device Based on Musculoskeletal Model 有权基于肌肉骨骼模型的肌肉力量获取方法和装置公开(公告)号：US20070256494A1
公开(公告)日：2007-11-08
申请号：US11629694
申请日：2005-06-10
申请人： Yoshihiko Nakamura , Katsu Yamane , Yusuke Fujita , Akihiko Murai
发明人： Yoshihiko Nakamura , Katsu Yamane , Yusuke Fujita , Akihiko Murai
IPC分类号： A61B5/22
CPC分类号： A61B5/224 , A61B5/4523 , A61B5/4528 , A61B5/4533
摘要： The present invention provides a method capable of acquiring a physically and physiologically valid muscular strength from motion data based on a musculoskeletal model. The present invention relates to a method for obtaining muscular tension by performing inverse dynamics calculation of a musculoskeletal model. The method comprises a step for optimizing a contact force τC received from an environment using acquired floor reaction force data and a step for optimizing the muscle tension ƒ using acquired motion data, acquired myogenic potential data, and optimized contact force. The motion data, reaction force data and myogenic potential data can be measured at the same time by a behavior capture system.
摘要翻译： 本发明提供一种能够基于肌肉骨骼模型从运动数据获得身体和生理学上有效的肌肉力量的方法。 本发明涉及通过进行肌肉骨骼模型的逆动力学计算来获得肌张力的方法。 该方法包括使用获取的地面反作用力数据优化从环境接收的接触力τS的步骤，以及使用获取的运动数据，获取的肌原性潜能数据优化肌肉张力f的步骤，并优化 接触力 运动数据，反作用力数据和造血潜能数据可以通过行为捕获系统同时测量。
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2.发明授权Muscular strength acquiring method and device based on musculoskeletal model 有权基于肌肉骨骼模型的肌肉力量获取方法和装置公开(公告)号：US07308826B2
公开(公告)日：2007-12-18
申请号：US11629694
申请日：2005-06-10
申请人： Yoshihiko Nakamura , Katsu Yamane , Yusuke Fujita , Akihiko Murai
发明人： Yoshihiko Nakamura , Katsu Yamane , Yusuke Fujita , Akihiko Murai
IPC分类号： A61B5/22
CPC分类号： A61B5/224 , A61B5/4523 , A61B5/4528 , A61B5/4533
摘要： The present invention provides a method capable of acquiring a physically and physiologically valid muscular strength from motion data based on a musculoskeletal model. The present invention relates to a method for obtaining muscular tension by performing inverse dynamics calculation of a musculoskeletal model. The method comprises a step for optimizing a contact force τC received from an environment using acquired floor reaction force data and a step for optimizing the muscle tension f using acquired motion data, acquired myogenic potential data, and optimized contact force. The motion data, reaction force data and myogenic potential data can be measured at the same time by a behavior capture system.
摘要翻译： 本发明提供一种能够基于肌肉骨骼模型从运动数据获得身体和生理学上有效的肌肉力量的方法。 本发明涉及通过进行肌肉骨骼模型的逆动力学计算来获得肌张力的方法。 该方法包括使用获取的地面反作用力数据优化从环境接收的接触力τS的步骤，以及使用获取的运动数据，获取的肌原性潜能数据优化肌肉张力f的步骤，并优化 接触力 运动数据，反作用力数据和造血潜能数据可以通过行为捕获系统同时测量。
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公开(公告)号：US09162720B2
公开(公告)日：2015-10-20
申请号：US13311419
申请日：2011-12-05
IPC分类号： G05B15/02 , B62D57/032
CPC分类号： B62D57/032
摘要： Embodiments of the invention provide an approach for reproducing a human action with a robot. The approach includes receiving data representing motions and contact forces of the human as the human performs the action. The approach further includes approximating, based on the motions and contact forces data, the center of mass (CoM) trajectory of the human in performing the action. Finally, the approach includes generating a planned robot action for emulating the designated action by solving an inverse kinematics problem having the approximated human CoM trajectory as a hard constraint and the motion capture data as a soft constraint.
摘要翻译： 本发明的实施例提供了一种用机器人再现人的动作的方法。 该方法包括接收表示人类执行动作的人的动作和接触力的数据。 该方法进一步包括基于运动和接触力数据近似，人类在执行动作时的质心（CoM）轨迹。 最后，该方法包括通过将具有近似人类CoM轨迹的逆运动学问题解决为硬约束并将运动捕捉数据作为软约束来生成用于模拟指定动作的计划机器人动作。
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公开(公告)号：US09018656B2
公开(公告)日：2015-04-28
申请号：US13201853
申请日：2010-02-23
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
摘要翻译： 发光装置包括安装基板和LED芯片，其包括n型氮化物半导体层，n型氮化物半导体层上的氮化物发光层，氮化物发光层上的p型氮化物半导体层， 与p型氮化物半导体层的氮化物发光层相反的阳极电极以及n型氮化物半导体层上的阴极电极。 安装基板具有图案化的导体，其通过凸块连接到阴极电极，并且还通过凸块连接到阳极电极。 LED芯片还包括在p型氮化物半导体层和阳极之间的一个或多个介电层，以具有类似于岛的布置。 p型氮化物半导体层具有与凸块重叠的第一区域。 电介质层不形成在第一区域内。
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5.发明申请公开(公告)号：US20130075776A1
公开(公告)日：2013-03-28
申请号：US13701998
申请日：2011-07-04
申请人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
发明人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
CPC分类号： G09F13/04 , G02B19/0028 , G02B19/0066 , G02B19/0071 , H01L33/005 , H01L33/50 , H01L33/58
摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.
摘要翻译： 发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。 第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。 在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。 在第一光学构件的外侧，形成各自具有梯形形状的外壁面。 第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。
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公开(公告)号：US20110248239A1
公开(公告)日：2011-10-13
申请号：US13141217
申请日：2009-12-21
申请人： Akihiko Murai
发明人： Akihiko Murai
摘要： A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
摘要翻译： 发光器件包括衬底和安装在衬底上的LED芯片。 芯片包括：主体，其包括透明导体，该透明导体包括基部并从基部伸出以从基部渐尖; 光源，其包括分别形成在所述基座上的发光部; 形成在基座上的第一端子; 以及分别形成在发光部分上的第二端子。 基板的导体图案包括：与第一端子电连接的第一导体; 以及分别与第二端子电连接的第二导体。
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公开(公告)号：US07994527B2
公开(公告)日：2011-08-09
申请号：US11593268
申请日：2006-11-06
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译： 一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料 表面，进入成形塑料光学元件被抽取到空气中。
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公开(公告)号：US08410471B2
公开(公告)日：2013-04-02
申请号：US13141217
申请日：2009-12-21
申请人： Akihiko Murai
发明人： Akihiko Murai
IPC分类号： H01L33/06
摘要： A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
摘要翻译： 发光器件包括衬底和安装在衬底上的LED芯片。 芯片包括：主体，其包括透明导体，该透明导体包括基部并从基部伸出以从基部渐尖; 光源，其包括分别形成在所述基座上的发光部; 形成在基座上的第一端子; 以及分别形成在发光部分上的第二端子。 基板的导体图案包括：与第一端子电连接的第一导体; 以及分别与第二端子电连接的第二导体。
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9.发明授权公开(公告)号：US08395173B2
公开(公告)日：2013-03-12
申请号：US13126525
申请日：2009-10-28
申请人： Akihiko Murai , Hiroshi Fukshima
发明人： Akihiko Murai , Hiroshi Fukshima
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/507
摘要： A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
摘要翻译： 提供了半导体发光元件及其制造方法以及能够提高发光效率的发光元件。 根据本发明的半导体发光元件1包括：具有p型GaN膜24和n型GaN膜22的层叠结构的发光层2; 由ZnO形成的导电六角锥形基座3，并且在底面31上与发光层一起安装; 在离开发光层2的位置处接合到基座3的底面31的阳极5; 以及安装在发光层2上的阴极4.在半导体发光元件1中，p型GaN膜24与基体3的底面31接合，阴极4与N n型GaN膜22的极性面，n型GaN膜22的N极平面与p型GaN膜24相反。在半导体发光元件1中， n型GaN膜22的极性面在与阴极4接合的部分的外侧具有微细的峰谷结构22c。
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10.发明授权Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications 失效用于光电子应用的晶片接合方法（A1，In，Ga）N和Zn（S，Se）公开(公告)号：US07344958B2
公开(公告)日：2008-03-18
申请号：US11175761
申请日：2005-07-06
申请人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
发明人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
CPC分类号： H01L21/2007 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
摘要翻译： （Al，In，Ga）N和Zn（S，Se）之间的晶片接合结构的制造方法。 可以使用Zn（S，Se）和MgS /（Zn，Cd）Se材料制造用于相对短的光波长的高反射和导电分布布拉格反射器（DBR）。 使用晶片接合技术，这些高质量的DBR结构可以与GaN基光学器件结构组合。
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