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1.发明授权Semiconductor element, semiconductor device and method for manufacturing semiconductor element 有权半导体元件，半导体元件及半导体元件的制造方法公开(公告)号：US09553063B2
公开(公告)日：2017-01-24
申请号：US13885841
申请日：2011-04-18
IPC分类号： H01L23/488 , H01L23/00 , H01L29/45 , H01L23/482 , H01L21/04 , H01L29/16
CPC分类号： H01L24/13 , H01L21/0485 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/83 , H01L29/1608 , H01L29/45 , H01L29/452 , H01L2224/04026 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/0517 , H01L2224/05171 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/05678 , H01L2224/29006 , H01L2224/2908 , H01L2224/29339 , H01L2224/32013 , H01L2224/32245 , H01L2224/83192 , H01L2224/83203 , H01L2224/83439 , H01L2224/8384 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/15747 , H01L2924/00
摘要： The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.
摘要翻译： 所述半导体元件具有包括：形成在所述半导体元件构成部件的至少一个面的一侧的含有镍的Ni-夹杂金属层的电极， 在与所述半导体元件构成部分的一侧相反的所述Ni-夹杂物层的一侧向外形成的Ni阻挡金属层; 和与金属纳米粒子烧结层连接的与Ni半导体元件构成部分相反一侧的Ni阻挡金属层一侧向外形成的表面金属层; 其中所述Ni阻挡金属层含有用于抑制镍向所述表面金属层扩散的金属。
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公开(公告)号：US09224665B2
公开(公告)日：2015-12-29
申请号：US14233252
申请日：2012-07-06
申请人： Kenji Ohtsu , Yoshiji Ohtsu , Taku Kusunoki , Takeshi Araki , Hiroaki Tatsumi
发明人： Kenji Ohtsu , Taku Kusunoki , Takeshi Araki , Hiroaki Tatsumi
IPC分类号： H01L23/48 , H01L23/14 , H01L23/373 , H01L23/498 , H01L23/00
CPC分类号： H01L23/14 , H01L23/3735 , H01L23/498 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/89 , H01L2224/0345 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05644 , H01L2224/05655 , H01L2224/06181 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/73263 , H01L2224/83192 , H01L2224/83447 , H01L2224/8384 , H01L2224/92246 , H01L2924/01029 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/15787 , H01L2924/00
摘要： A semiconductor device includes a circuit substrate which is configured with an insulative substrate formed of a ceramic material and provided on its one surface with an electrode formed of a copper material, and a power semiconductor element bonded with the electrode using a sinterable silver-particle bonding material, wherein the electrode has a Vickers hardness of 70 HV or more in its portion from the bonding face with the power semiconductor element toward the insulative substrate to a depth of 50 μm, and has a Vickers hardness of 50 HV or less in its portion at the side toward the insulative substrate.
摘要翻译： 半导体器件包括电路基板，该电路基板由陶瓷材料形成的绝缘基板和在其一个表面上由铜材料形成的电极构成，功率半导体元件使用可烧结的银粒子接合 材料，其中所述电极在其与所述功率半导体元件的接合面朝向所述绝缘基板的部分中的维氏硬度为70HV以上的深度为50μm，并且其部分的维氏硬度为50HV以下 在朝向绝缘基板的一侧。
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3.发明申请SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 有权半导体元件，半导体器件及制造半导体元件的方法公开(公告)号：US20140312361A1
公开(公告)日：2014-10-23
申请号：US13885841
申请日：2011-04-18
申请人： Yoshiji Ohtsu
CPC分类号： H01L24/13 , H01L21/0485 , H01L23/4827 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/83 , H01L29/1608 , H01L29/45 , H01L29/452 , H01L2224/04026 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/0517 , H01L2224/05171 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/05678 , H01L2224/29006 , H01L2224/2908 , H01L2224/29339 , H01L2224/32013 , H01L2224/32245 , H01L2224/83192 , H01L2224/83203 , H01L2224/83439 , H01L2224/8384 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/15747 , H01L2924/00
摘要： The semiconductor element has an electrode including: a Ni-inclusion metal layer containing nickel formed on a side of at least one surface of the semiconductor-element constituting part; a Ni-barrier metal layer formed outwardly on a side of the Ni-inclusion metal layer opposite to the side toward the semiconductor-element constituting part; and a surface metal layer outwardly formed on a side of the Ni-barrier metal layer opposite to the side toward the semiconductor-element constituting part, to be connected to the metal nanoparticles sintered layer; wherein the Ni-barrier metal layer contains a metal for suppressing diffusion of nickel toward the surface metal layer.
摘要翻译： 所述半导体元件具有包括：形成在所述半导体元件构成部件的至少一个面的一侧的含有镍的Ni-夹杂金属层的电极， 在与所述半导体元件构成部分的一侧相反的所述Ni-夹杂物层的一侧向外形成的Ni阻挡金属层; 和与金属纳米粒子烧结层连接的与Ni半导体元件构成部分相反一侧的Ni阻挡金属层一侧向外形成的表面金属层; 其中所述Ni阻挡金属层含有用于抑制镍向所述表面金属层扩散的金属。
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公开(公告)号：US20140138710A1
公开(公告)日：2014-05-22
申请号：US14233252
申请日：2012-07-06
申请人： Yoshiji Ohtsu
发明人： Kenji Ohtsu , Taku Kusunoki , Takeshi Araki , Hiroaki Tatsumi
CPC分类号： H01L23/14 , H01L23/3735 , H01L23/498 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/89 , H01L2224/0345 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05644 , H01L2224/05655 , H01L2224/06181 , H01L2224/29294 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/73263 , H01L2224/83192 , H01L2224/83447 , H01L2224/8384 , H01L2224/92246 , H01L2924/01029 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/15787 , H01L2924/00
摘要： A semiconductor device includes a circuit substrate which is configured with an insulative substrate formed of a ceramic material and provided on its one surface with an electrode formed of a copper material, and a power semiconductor element bonded with the electrode using a sinterable silver-particle bonding material, wherein the electrode has a Vickers hardness of 70 HV or more in its portion from the bonding face with the power semiconductor element toward the insulative substrate to a depth of 50 μm, and has a Vickers hardness of 50 HV or less in its portion at the side toward the insulative substrate.
摘要翻译： 半导体器件包括电路基板，该电路基板由陶瓷材料形成的绝缘基板和在其一个表面上由铜材料形成的电极构成，功率半导体元件使用可烧结的银粒子接合 材料，其中所述电极在其与所述功率半导体元件的接合面朝向所述绝缘基板的部分中的维氏硬度为70HV以上的深度为50μm，并且其部分的维氏硬度为50HV以下 在朝向绝缘基板的一侧。
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