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49 条记录 (耗时 0.031 秒)

    Photoelectric device
    1.
    发明授权
    Photoelectric device 失效
    光电器件

    公开(公告)号：US4556816A

    公开(公告)日：1985-12-03

    申请号：US510910

    申请日：1983-07-05

    申请人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    发明人： Yoshinori Imamura ,  Saburo Ataka ,  Yukio Takasaki ,  Yasuo Tanaka ,  Tadaaki Hirai ,  Eiichi Maruyama

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H01J31/00 ,  H01J31/26

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233

    摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.

    摘要翻译： 公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的 层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物 ，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

    Storage type photosensor containing silicon and hydrogen
    2.
    发明授权
    Storage type photosensor containing silicon and hydrogen 失效
    含硅和氢的存储型光电传感器

    公开(公告)号：US4255686A

    公开(公告)日：1981-03-10

    申请号：US39580

    申请日：1979-05-16

    申请人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    发明人： Eiichi Maruyama ,  Yoshinori Imamura ,  Saburo Ataka ,  Kiyohisa Inao ,  Yukio Takasaki ,  Toshihisa Tsukada ,  Tadaaki Hirai

    IPC分类号： H01J29/45 ,  H01L31/0248 ,  H01J31/38

    CPC分类号： H01J29/45

    摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.

    摘要翻译： 在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于 至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

    Method of production of image pickup device
    4.
    发明授权
    Method of production of image pickup device 失效
    图像拾取装置的制造方法

    公开(公告)号：US4380557A

    公开(公告)日：1983-04-19

    申请号：US287554

    申请日：1981-07-28

    申请人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

    发明人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

    IPC分类号： G03G5/08 ,  B05D3/02 ,  B05D3/04 ,  H01J9/233 ,  H01L21/205 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10

    CPC分类号： H01J9/233

    摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

    摘要翻译： 在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性 通过这种热处理高度改善了层。 例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。 当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为 观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。 增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

    Photoelectric device and method of producing the same
    6.
    发明授权
    Photoelectric device and method of producing the same 失效
    光电器件及其制造方法

    公开(公告)号：US4394749A

    公开(公告)日：1983-07-19

    申请号：US154999

    申请日：1980-05-30

    申请人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    发明人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

    IPC分类号： H01L27/146 ,  G11C13/00

    CPC分类号： H01L27/14665

    摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

    摘要翻译： 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖 电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

    Solid-state imaging device
    7.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4323912A

    公开(公告)日：1982-04-06

    申请号：US152690

    申请日：1980-05-23

    申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Photosensor having impurity concentration gradient
    9.
    发明授权
    Photosensor having impurity concentration gradient 失效
    具有杂质浓度梯度的光电传感器

    公开(公告)号：US4626885A

    公开(公告)日：1986-12-02

    申请号：US518658

    申请日：1983-07-29

    申请人： Sachio Ishioka ,  Yoshinori Imamura ,  Tsuyoshi Uda ,  Yukio Takasaki ,  Chushirou Kusano ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

    发明人： Sachio Ishioka ,  Yoshinori Imamura ,  Tsuyoshi Uda ,  Yukio Takasaki ,  Chushirou Kusano ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

    IPC分类号： H01J29/45 ,  H01L31/0376 ,  H01L31/08 ,  H01L31/09 ,  H01J31/00 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/095 ,  H01J29/456 ,  H01L31/03762 ,  Y02E10/548

    摘要： A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.

    摘要翻译： 公开了一种光电传感器，其包括用于透射入射光的透明电极和从用于进行光电转换的透明电极接收光的光电导层，其中光电导层由非晶硅制成，非晶硅含有5至30原子％的氢，并且是 掺杂有选自属于II和III族的元素中的至少一种，使得远离透明电极的区域的选择元素的浓度高于邻近透明电极的另一区域的浓度，并施加电压 横跨光电导层，使得面向透明电极的光电导层的表面相对于与面向透明电极的表面相反的光电导层的另一表面处于正电位。