公开(公告)号：US4556817A

公开(公告)日：1985-12-03

申请号：US547962

申请日：1983-11-02

申请人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： H01J29/45 ,  H01L31/02 ,  H01J31/26

CPC分类号： H01J29/456 ,  H01J29/45

摘要： An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.

摘要翻译： 一种具有目标的高速电子束扫描和负电荷系统的图像拾取管，在透明基板上至少包括透明导电膜，光电导层，用于发射二次电子的层和条形电极。 透明基板可以由非晶硅制成。

公开(公告)号：US4636682A

公开(公告)日：1987-01-13

申请号：US491921

申请日：1983-05-05

申请人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

发明人： Chushirou Kusano ,  Sachio Ishioka ,  Yoshinori Imamura ,  Yukio Takasaki ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

IPC分类号： H01J29/36 ,  H01J29/45 ,  H01J31/38 ,  H01L31/08 ,  H01J31/00

CPC分类号： H01J29/456

摘要： A high velocity electron beam scanning negatively charge biased image pickup tube has a target which includes at least a transparent conductive layer, a photoconductor layer and a layer for secondary electron emission on a light-transmissive insulating substrate, and in which the transparent conductive layer is arranged on a light incidence side, the photoconductor layer being made of amorphous silicon.

摘要翻译： 高速电子束扫描带负电荷偏压的图像拾取管具有至少包括透明导电层，光电导体层和在透光绝缘基板上用于二次电子发射的层的目标，并且其中透明导电层为 布置在光入射侧，感光体层由非晶硅制成。

公开(公告)号：US4626885A

公开(公告)日：1986-12-02

申请号：US518658

申请日：1983-07-29

申请人： Sachio Ishioka ,  Yoshinori Imamura ,  Tsuyoshi Uda ,  Yukio Takasaki ,  Chushirou Kusano ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

发明人： Sachio Ishioka ,  Yoshinori Imamura ,  Tsuyoshi Uda ,  Yukio Takasaki ,  Chushirou Kusano ,  Hirofumi Ogawa ,  Tatsuo Makishima ,  Tadaaki Hirai

IPC分类号： H01J29/45 ,  H01L31/0376 ,  H01L31/08 ,  H01L31/09 ,  H01J31/00 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L31/095 ,  H01J29/456 ,  H01L31/03762 ,  Y02E10/548

摘要： A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.

摘要翻译： 公开了一种光电传感器，其包括用于透射入射光的透明电极和从用于进行光电转换的透明电极接收光的光电导层，其中光电导层由非晶硅制成，非晶硅含有5至30原子％的氢，并且是 掺杂有选自属于II和III族的元素中的至少一种，使得远离透明电极的区域的选择元素的浓度高于邻近透明电极的另一区域的浓度，并施加电压 横跨光电导层，使得面向透明电极的光电导层的表面相对于与面向透明电极的表面相反的光电导层的另一表面处于正电位。

公开(公告)号：US4609846A

公开(公告)日：1986-09-02

申请号：US652459

申请日：1984-09-20

申请人： Chushirou Kusano ,  Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Hirofumi Ogawa

发明人： Chushirou Kusano ,  Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/28 ,  H01J31/30 ,  H01J29/82

CPC分类号： H01J29/45

摘要： An image pick-up tube has a photoelectric conversion target including a transparent substrate, and a transparent electrode and a photoconductive layer formed on the transparent substrate. An electron beam is scanned on the photoelectric conversion target. A first electrode is formed on a beam scanning surface of the photoconductive layer so as to be segmented in stripe or grid with its electrode segments electrically connected to each other. A second electrode is formed on the first electrode through an insulating layer with its electrode segments electrically connected to each other. An insulating layer may be interposed between the first electrode and the photoconductive layer.

摘要翻译： 图像拾取管具有包括透明基板的光电转换目标，以及形成在透明基板上的透明电极和光电导层。 在光电转换靶上扫描电子束。 第一电极形成在光电导层的光束扫描表面上，以便以带状或栅格分割，其电极段彼此电连接。 第二电极通过绝缘层形成在第一电极上，其电极段彼此电连接。 可以在第一电极和光电导层之间插入绝缘层。

公开(公告)号：US4330733A

公开(公告)日：1982-05-18

申请号：US152291

申请日：1980-05-22

申请人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

发明人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

IPC分类号： H01J29/45 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/02725 ,  H01J29/45

摘要： A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

摘要翻译： 一种光电导体，其具有主要由Se制成的电极和P型导电层，并在与电极的界面处进行整流接触，至少在P型导电层的一部分中掺杂有Te。 在大部分P型导电层产生信号电流的区域中掺杂有至少一种金属氟化物，平均浓度不低于50ppm且不超过5重量％。 金属氟化物优选为选自LiF，NaF，MgF 2，CaF 2，BaF 2，AlF 3，CrF 3，MnF 2，CoF 2，PbF 2，CeF 3和TlF中的至少一种。 因此可以显着地降低光导目标的高光粘附。

公开(公告)号：US4463279A

公开(公告)日：1984-07-31

申请号：US380779

申请日：1982-05-21

申请人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

发明人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

IPC分类号： H01L31/0248 ,  H01J29/45 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/08 ,  H01J29/456

摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.

摘要翻译： 一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有 碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。 这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。 可以显着提高归因于高强度入射光的后图像特性。

公开(公告)号：US5017973A

公开(公告)日：1991-05-21

申请号：US287738

申请日：1988-12-21

申请人： Hiroshi Mizuta ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

发明人： Hiroshi Mizuta ,  Tomonori Tanoue ,  Chushirou Kusano ,  Susumu Takahashi

IPC分类号： H01L29/15 ,  H01L29/201 ,  H01L29/205 ,  H01L29/68 ,  H01L29/88

CPC分类号： B82Y10/00 ,  H01L29/155 ,  H01L29/882

摘要： A resonant tunneling device includes a superlattice layer which includes an interlaminated structure of three semiconductor layers each having a narrow energy bandgap and serving as a quantum well layer and four semiconductor layers each having a wide energy bandgap and serving as a barrier layer and in which three quantum levels are formed in the quantum well layers. A resonant tunneling phenomenon produced between the quantum levels provides peak current values which are substantially equal to each other, peak voltages which can be set independently from each other, and peak-to-valley (P/V) ratios which are high, thereby realizing a resonant tunneling device which has an excellent performance as a three state logic element for a logic circuit. By increasing the number of quantum well layers and the number of barrier layers, a logic element of four or more states can be realized for a logic circuit.

公开(公告)号：US5668402A

公开(公告)日：1997-09-16

申请号：US66635

申请日：1993-05-24

申请人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

发明人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  A61F7/02 ,  H01L21/20 ,  H01L21/331 ,  H01L21/338 ,  H01L29/04 ,  H01L29/205 ,  H01L29/737 ,  H01L29/812

CPC分类号： H01L29/045 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02609 ,  A61F2007/0265

摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.

摘要翻译： 半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。 半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

公开(公告)号：US5399230A

公开(公告)日：1995-03-21

申请号：US72407

申请日：1993-06-07

申请人： Shinichiro Takatani ,  Takeshi Kikawa ,  Chushirou Kusano ,  Masatoshi Nakazawa

发明人： Shinichiro Takatani ,  Takeshi Kikawa ,  Chushirou Kusano ,  Masatoshi Nakazawa

IPC分类号： C23F4/00 ,  H01L21/285 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/331 ,  H01L21/335 ,  H01L23/14 ,  B44C1/22

CPC分类号： H01L29/66318 ,  H01L21/28587 ,  H01L21/30617 ,  H01L29/66462

摘要： A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not by etching time, but by the number of runs (repetitions) of the etching step, and thus can be precisely controlled.

摘要翻译： 通过用化合物半导体的复合元件代替其它元件的步骤来蚀刻化合物半导体，从而在化合物半导体的表面上形成化合物层，以及从表面除去化合物层的步骤。 蚀刻深度不受蚀刻时间控制，而是通过蚀刻步骤的次数（重复）来控制，因此可以精确地控制。

公开(公告)号：US4407010A

公开(公告)日：1983-09-27

申请号：US290570

申请日：1981-08-06

申请人： Toru Baji ,  Toshihisa Tsukada ,  Norio Koike ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Shigeru Shimada ,  Chushirou Kusano ,  Shinya Ohba ,  Haruo Matsumaru

发明人： Toru Baji ,  Toshihisa Tsukada ,  Norio Koike ,  Toshiyuki Akiyama ,  Iwao Takemoto ,  Shigeru Shimada ,  Chushirou Kusano ,  Shinya Ohba ,  Haruo Matsumaru

IPC分类号： H01L27/14 ,  H01L21/8234 ,  H01L23/62 ,  H01L23/64 ,  H01L27/02 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L27/146 ,  H01L29/78 ,  H01L31/08 ,  H02H7/20 ,  H03F1/42 ,  H03F1/52 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H04N3/14

CPC分类号： H01L23/62 ,  H01L23/647 ,  H01L27/0251 ,  H01L27/14654 ,  H04N3/1512 ,  H04N3/1568 ,  H01L2924/0002

摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.

摘要翻译： 具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。 每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。 为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。 第三场效应晶体管耦合到光电转换元件，用于复位它。