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    Light emitter device based on a photonic crystal with pillar- or wall-shaped semiconductor elements, and methods for the operation and production thereof
    3.
    发明授权
    Light emitter device based on a photonic crystal with pillar- or wall-shaped semiconductor elements, and methods for the operation and production thereof 有权

    公开(公告)号：US11152760B2

    公开(公告)日：2021-10-19

    申请号：US16469484

    申请日：2017-12-05

    申请人： Forschungsverbund Berlin e.V.

    发明人： Oliver Brandt ,  Lutz Geelhaar ,  Ivano Giuntoni

    IPC分类号： H01S5/0625 ,  H01S5/12 ,  H01S5/187 ,  H01S5/042 ,  H01S5/34 ,  H01S5/11 ,  H01S5/02 ,  H01S5/04 ,  H01S5/10

    摘要： A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d1), in a second resonator section (23) with a second period (d2) and in a third resonator section (24) with a third period (d3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d2) and the third period (d3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator section (22) can be coupled out of the resonator in a light outcoupling direction parallel to a substrate surface (11) of the substrate (10). Methods for operating and producing the light emitter device (100) are also described.

    Gate structure and method for producing same
    4.
    发明授权
    Gate structure and method for producing same 有权

    公开(公告)号：US11127863B2

    公开(公告)日：2021-09-21

    申请号：US16462650

    申请日：2017-11-20

    申请人： FORSCHUNGSVERBUND BERLIN E.V.

    发明人： Konstantin Osipov ,  Richard Lossy ,  Hans-Joachim Würfl

    IPC分类号： H01L29/812 ,  H01L29/66

    摘要： This invention concerns a gate structure and a process for its manufacturing. In particular, the present invention concerns the gate structuring of a field effect transistor with reduced thermo-mechanical stress and increased reliability (lower electromigration or diffusion of the gate metal). The gate structure according to the invention comprises a substrate; an active layer disposed on the substrate; an intermediate layer disposed on the active layer, the intermediate layer-having a recess extending through the entire intermediate layer towards the active layer; and a contact element which is arranged within the recess, the contact element completely filling the recess and extending to above the intermediate layer, the contact element resting at least in sections directly on the intermediate layer; the contact element being made of a Schottky metal and the contact element having an interior cavity completely enclosed by the Schottky metal.

    LASER DIODE WITH DISTRIBUTED FEEDBACK AND METHOD FOR PRODUCING
    7.
    发明申请
    LASER DIODE WITH DISTRIBUTED FEEDBACK AND METHOD FOR PRODUCING 审中-公开

    公开(公告)号：US20180145481A1

    公开(公告)日：2018-05-24

    申请号：US15736631

    申请日：2016-03-09

    申请人： FORSCHUNGSVERBUND BERLIN E.V.

    发明人： Jörg FRICKE ,  Götz ERBERT ,  Paul CRUMP ,  Jonathan DECKER

    IPC分类号： H01S5/12 ,  H01S5/026 ,  H01S5/20

    CPC分类号： H01S5/1225 ,  H01S5/026 ,  H01S5/1221 ,  H01S5/1231 ,  H01S5/2086

    摘要： Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for decoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grid operatively connected to the waveguiding region, wherein the grid comprises a plurality of webs and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grid is non-zero, wherein the coupling parameter P of a trench is defined by the formula, wherein dres is a distance of the trench to the active layer, w is a width of the trench and Δn is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

    METHOD AND APPARATUS FOR GENERATING PLASMA PULSES
    8.
    发明申请
    METHOD AND APPARATUS FOR GENERATING PLASMA PULSES 审中-公开
    用于产生等离子体脉冲的方法和装置

    公开(公告)号：US20160093475A1

    公开(公告)日：2016-03-31

    申请号：US14962680

    申请日：2015-12-08

    申请人： Forschungsverbund Berlin E.V.

    发明人： Roland GESCHE

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32293 ,  H01J37/3222 ,  H01J2237/327 ,  H05H1/46 ,  H05H1/48

    摘要： A method and apparatus generates pulses that can be used for high-precision three-dimensional plasma treatment. At least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function. In a method, the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method uses at least one source and at least one reflection element. An apparatus with at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device is configured such that one of the methods can be executed.

    摘要翻译： 一种方法和装置产生可用于高精度三维等离子体处理的脉冲。 至少两个源具有至少一个时间功能，其中至少两个源中的每一个辐射由时间函数之一产生的电磁场和至少一个时间函数。 在一种方法中，所述至少两个源以这样的方式协作，使得至少一个预定的场强在至少两个预定的时空点中以时间依次顺序地实现。 替代方法使用至少一个源和至少一个反射元件。 具有至少两个源和至少一个数据处理设备或至少一个源，至少一个反射元件和至少一个数据处理设备的设备被配置为使得可以执行其中一个方法。