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1.发明申请DUAL SUBSTRATE ELECTROSTATIC MEMS SWITCH WITH MULTIPLE HINGES AND METHOD OF MANUFACTURE 有权具有多个铰链的双基板静电MEMS开关及其制造方法公开(公告)号：US20160268084A1
公开(公告)日：2016-09-15
申请号：US15060630
申请日：2016-03-04
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Paul J. RUBEL , Marin Sigurdson
CPC classification number: H01H59/0009 , B81B7/00 , B81B2201/012 , B81C1/00341 , H01H49/00 , H01H2001/0084
Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.
Abstract translation: 用于形成静电MEMS开关的系统和方法包括在第一基板上形成可移动的悬臂梁，在第二基板上形成电触点，并且使用气密密封来连接两个基板。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。 可以通过蚀刻SOI衬底的器件层中的周边形状来形成悬臂梁。 可移动梁中可能形成一个额外的空隙，使其由于附加的空隙而围绕另外的铰链线弯曲。 这可以给出光束并切换有利的运动特性。
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公开(公告)号：US20180111825A1
公开(公告)日：2018-04-26
申请号：US15834185
申请日：2017-12-07
Applicant: Ciena Corporation
Inventor： Michael Y. FRANKEL , John P. MATEOSKY
CPC classification number: B81B7/008 , B81B7/04 , B81B2201/012 , H01H59/0009 , H04Q11/00 , H04Q11/0005 , H04Q2011/0039 , H04Q2213/1302 , H04Q2213/1304 , Y10T307/747
Abstract: An electrical cross-point switch N inputs, each at least 10 Gbps, connected to input transmission lines; M outputs, each at least 10 Gbps, connected to output transmission lines; at least two Radio Frequency (RF) Microelectromechanical systems (MEMS) switches selectively interconnecting each input transmission line and each output transmission line; and control and addressing circuitry configured to selectively control interconnection of each input transmission line and each output transmission line via the at least two RF MEMS switches. The at least two RF MEMS switches can be embedded in each input transmission line and each output transmission line. The input transmission lines and the output transmission lines can each be partially shielded microwave transmission lines.
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公开(公告)号：US20170347174A1
公开(公告)日：2017-11-30
申请号：US15604414
申请日：2017-05-24
Applicant: Knowles Electronics, LLC
Inventor： Venkataraman Chandrasekaran , Claus Furst , Joshua Watson , John Szczech
CPC classification number: H04R1/028 , B81B7/0061 , B81B7/02 , B81B2201/012 , B81B2201/0257 , B81B2201/0264 , B81C1/00238 , G01L23/125 , G01L27/005 , H01L2224/48091 , H01L2924/15151 , H01L2924/16152 , H04R1/04 , H04R3/005 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2430/21 , H01L2924/00014
Abstract: A microphone device comprises a microphone die including a first microphone motor and a second microphone motor, an acoustic integrated circuit structured to process signals produced by the first microphone motor and the second microphone motor, and a sensor die stacked on top of the acoustic integrated circuit, wherein the sensor die comprises a pressure sensor. Another microphone comprises a microphone die including a first microphone motor and a second microphone motor and an integrated circuit die. The integrated circuit die comprises an acoustic integrated circuit structured to process signals produced by the first microphone motor and the second microphone motor, a pressure sensor, and a pressure integrated circuit structured to press signals produced by the pressure sensor.
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公开(公告)号：US09953787B2
公开(公告)日：2018-04-24
申请号：US15060630
申请日：2016-03-04
Applicant: Innovative Micro Technology
Inventor： Christopher S. Gudeman , Paul J. Rubel , Marin Sigurdson
CPC classification number: H01H59/0009 , B81B7/00 , B81B2201/012 , B81C1/00341 , H01H49/00 , H01H2001/0084
Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.
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公开(公告)号：US09868631B2
公开(公告)日：2018-01-16
申请号：US14027818
申请日：2013-09-16
Applicant: Michael Y. Frankel , John P. Mateosky
Inventor： Michael Y. Frankel , John P. Mateosky
CPC classification number: B81B7/008 , B81B7/04 , B81B2201/012 , H01H59/0009 , H04Q11/00 , H04Q11/0005 , H04Q2011/0039 , H04Q2213/1302 , H04Q2213/1304 , Y10T307/747
Abstract: A Microelectromechanical systems (MEMS)-based N×M cross-point switch, a MEMS-based system, and a method provide MEMS-based cross-point electrical switching for a Layer 0 flow-based switch. The N×M cross-point switch includes N inputs each at least 10 Gbps, M output each at least 10 Gbps, a plurality of Radio Frequency (RF) MEMS switches selectively interconnecting the N inputs to the M outputs; and control and addressing circuitry to selectively control the plurality of RF MEMS switches to switch each of the N inputs to a corresponding output of the M outputs. The systems and methods provide an electrical switching fabric for flow-based switching of wavelengths that can be part of a Reconfigurable Electrical Add/Drop Multiplexer (READM) with similar functionality as a ROADM in the electronic domain.
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Patent Agency Ranking
公开(公告)号：US20170166438A1
公开(公告)日：2017-06-15
申请号：US14969329
申请日：2015-12-15
Applicant: Bucknell C. Webb
Inventor： Bucknell C. Webb
CPC classification number: B81B3/0056 , B81B2201/012 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C1/00619 , B81C2201/0112 , B81C2201/0132 , B81C2201/0178 , B81C2203/0109 , B81C2203/0136 , H01H59/0009 , H01H2001/0078
Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.
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公开(公告)号：US20050248424A1
公开(公告)日：2005-11-10
申请号：US10841385
申请日：2004-05-07
Applicant: Tsung-Kuan Chou , John Heck
Inventor： Tsung-Kuan Chou , John Heck
CPC classification number: B81B3/0072 , B81B2201/012 , B81B2203/0118
Abstract: A cantilevered beam radio frequency microelectro-mechanical switch may be formed of low stress gradient polysilicon with a metallic contact. The region between the beam and the substrate may be free of dielectric in some embodiments. Oxide layers may be protected by a nitride protection layer in some cases.
Abstract translation: 悬臂梁射频微电子机械开关可以由具有金属接触的低应力梯度多晶硅形成。 在一些实施例中，光束和衬底之间的区域可以不具有电介质。 在某些情况下，氧化物层可以被氮化物保护层保护。
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公开(公告)号：US20190104351A1
公开(公告)日：2019-04-04
申请号：US16206916
申请日：2018-11-30
Applicant: Knowles Electronics, LLC
Inventor： Venkataraman Chandrasekaran , Claus Furst , Joshua Watson , John Szczech
IPC: H04R1/02 , B81B7/02 , H04R1/04 , H04R19/00 , H04R19/04 , H04R3/00 , B81B7/00 , B81C1/00 , G01L27/00 , G01L23/12
CPC classification number: H04R1/028 , B81B7/0061 , B81B7/02 , B81B2201/012 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81C1/00238 , G01L23/125 , G01L27/005 , H01L2224/48091 , H01L2924/15151 , H01L2924/16152 , H04R1/04 , H04R3/005 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2430/21 , H01L2924/00014
Abstract: A microphone device comprises a microphone die including a microphone motor, an acoustic integrated circuit structured to process signals produced by the microphone motor, and a sensor die stacked on top of the acoustic integrated circuit, wherein the sensor die comprises a pressure sensor. Another microphone comprises a microphone die including a microphone motor and an integrated circuit die. The integrated circuit die comprises an acoustic integrated circuit structured to process signals produced by the microphone motor, a pressure sensor, and a pressure integrated circuit structured to press signals produced by the pressure sensor.
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公开(公告)号：US20170341931A1
公开(公告)日：2017-11-30
申请号：US15650953
申请日：2017-07-16
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Bucknell C. Webb
CPC classification number: B81B3/0056 , B81B2201/012 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C1/00619 , B81C2201/0112 , B81C2201/0132 , B81C2201/0178 , B81C2203/0109 , B81C2203/0136 , H01H59/0009 , H01H2001/0078
Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.
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公开(公告)号：US20170341930A1
公开(公告)日：2017-11-30
申请号：US15650788
申请日：2017-07-14
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Bucknell C. Webb
CPC classification number: B81B3/0056 , B81B2201/012 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C1/00619 , B81C2201/0112 , B81C2201/0132 , B81C2201/0178 , B81C2203/0109 , B81C2203/0136 , H01H59/0009 , H01H2001/0078
Abstract: Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.
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