Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making
    3.
    发明授权
    Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making 有权
    具有多层不同压电材料的薄膜体声共振器及制作方法

    公开(公告)号:US09065421B2

    公开(公告)日:2015-06-23

    申请号:US13362321

    申请日:2012-01-31

    摘要: A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

    摘要翻译: 薄膜体声波谐振器(FBAR)包括第一电极,具有第一c轴取向的第一压电层,在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层,以及 在第二压电层上的第二电极。 第一和第二压电层由相应的不同的压电材料制成。 通过选择第一和第二c轴取向分别相同或不同,可以将FBAR设置为具有不同的谐振频率。 因此可以扩展FBAR的高低频范围。

    Acoustic wave device and multilayered substrate
    4.
    发明授权
    Acoustic wave device and multilayered substrate 有权
    声波装置和多层基板

    公开(公告)号:US09035535B2

    公开(公告)日:2015-05-19

    申请号:US13666520

    申请日:2012-11-01

    发明人: Takashi Yamashita

    摘要: An acoustic wave device includes: a substrate; a functional element that is located on the substrate and excites acoustic waves; a side wall portion that is made of a metal and is located on the substrate so as to surround the functional element; a metal plate that is located above the functional element and the side wall portion, and seals the functional element so that a space is formed above the functional element; and a terminal that is located on the substrate and further out than the side wall portion, and is electrically connected to the functional element.

    摘要翻译: 声波装置包括:基板; 功能元件位于基板上并激发声波; 侧壁部,其由金属制成并且位于所述基板上以围绕所述功能元件; 金属板,其位于功能元件和侧壁部分上方,并且密封功能元件,使得在功能元件上方形成空间; 以及位于所述基板上并且比所述侧壁部更远的端子,并且与所述功能元件电连接。

    Tuning fork-type piezoelectric resonator plate and tuning fork-type piezoelectric resonator
    6.
    发明授权
    Tuning fork-type piezoelectric resonator plate and tuning fork-type piezoelectric resonator 有权
    调谐叉式压电谐振器板和音叉式压电谐振器

    公开(公告)号:US08928208B2

    公开(公告)日:2015-01-06

    申请号:US13639149

    申请日:2012-02-02

    摘要: A tuning fork-type piezoelectric resonator plate has a resonator blank comprising a pair of vibrating leg portions and a base portion from which the leg portions protrude. The pair of leg portions are arranged in parallel protrudingly from one end face of the base portion, and a pronged portion is formed between the pair of leg portions in an intermediate position in a width direction of the one end face of the base portion. The base portion has a pair of through holes along the one end face of the base portion, and on another end face side opposite to the one end face of the base portion, a joining region that joins to an external portion. The pair of through holes are specially positioned and have special wall surface configurations.

    摘要翻译: 音叉式压电谐振器板具有共振器坯体,其包括一对振动腿部和腿部突出的基部。 一对腿部从基部的一个端面突出地平行地布置,并且在基部的一个端面的宽度方向上的中间位置处,在一对腿部之间形成有叉形部分。 基部具有沿着基部的一个端面的一对通孔,在与基部的一个端面相反的另一个端面侧具有与外部连接的接合区域。 这对通孔是特别定位的,具有特殊的墙面配置。

    Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same
    7.
    发明授权
    Thin-film piezoelectric resonator and thin-film piezoelectric filter using the same 有权
    薄膜压电谐振器和使用其的薄膜压电滤波器

    公开(公告)号:US08854156B2

    公开(公告)日:2014-10-07

    申请号:US13202442

    申请日:2010-02-17

    摘要: A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1

    摘要翻译: 1.一种薄膜压电谐振器,包括基板(6); 压电层(2),具有顶部电极(10)和底部电极(8)的压电谐振器叠层(12)和空腔(4)。 压电谐振器叠层(12)具有顶部电极和底部电极在厚度方向上重叠的振动区域(40),振动区域包括第一振动区域,第二振动区域和第三振动区域。 当从厚度方向观察时,第一振动区域存在于最外侧,第三振动区域存在于最内侧并且不与第一振动区域接触,并且第二振动区域介于第一振动区域和第二振动区域之间, 第三振动区域。 振动区域(40)的初始厚度 - 纵向振动的共振频率在第一振动区域为f1,在第三振动区域为f2,其中f1和f2满足f1

    Crystal oscillator piece and method for manufacturing the same
    10.
    发明授权
    Crystal oscillator piece and method for manufacturing the same 失效
    晶体振荡片及其制造方法

    公开(公告)号:US08347469B2

    公开(公告)日:2013-01-08

    申请号:US12532979

    申请日:2008-03-26

    IPC分类号: H01L41/22 H04R17/00

    摘要: An object of the present invention is to provide a crystal oscillator piece in which the generation of leakage vibration is suppressed, and a method for manufacturing such a crystal oscillator piece. More specifically, a method for manufacturing a crystal oscillator piece according to the present invention includes the steps of forming a first etching mask on an upper surface of a crystal wafer and a second etching mask on a lower surface of the crystal wafer, and forming a vibrating tine by immersing the crystal wafer in an etching solution thereby dissolving crystal portions not covered with the first and second etching masks, wherein the second etching mask is designed to have a first protruding portion protruding from a position corresponding to a first edge of the first etching mask, the first protruding portion being chosen to have such a length that a first residue is formed in a predetermined shape on a first side face, irrespective of a positional displacement between the first and second etching masks, and wherein the first and second etching masks are designed so that a second residue formed on a second side face is adjusted so as to ensure that one of two principal axes passing through a centroid and dynamically perpendicular to each other in a cross section taken perpendicularly to a longitudinal direction of the vibrating tine is oriented substantially parallel to the upper or lower surface of the crystal wafer.

    摘要翻译: 本发明的目的在于提供抑制泄漏振动的产生的晶体振荡片及其制造方法。 更具体地说,根据本发明的制造晶体振荡片的方法包括在晶片的上表面上形成第一蚀刻掩模和在晶片的下表面上形成第二蚀刻掩模的步骤, 通过将晶体晶片浸渍在蚀刻溶液中从而溶解未被第一和第二蚀刻掩模覆盖的晶体部分,其中第二蚀刻掩模被设计为具有从对应于第一和第二蚀刻掩模的第一边缘的位置突出的第一突出部分, 蚀刻掩模,第一突出部分被选择为具有在第一侧面上以预定形状形成第一残留物的长度,而与第一和第二蚀刻掩模之间的位置偏移无关,并且其中第一和第二蚀刻 掩模被设计成使得形成在第二侧面上的第二残留物被调节以确保两个主轴之一 在垂直于振动齿的纵向方向截取的横截面中通过质心并且彼此动态地垂直的方向取向为大致平行于晶体晶片的上表面或下表面。