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    Quantum tunnelling transducer device
    3.
    发明授权
    Quantum tunnelling transducer device 有权
    量子隧道传感器装置

    公开(公告)号：US08033091B2

    公开(公告)日：2011-10-11

    申请号：US10554312

    申请日：2004-04-22

    申请人： Marek Michalewicz ,  Zygmunt Rymuza

    发明人： Marek Michalewicz ,  Zygmunt Rymuza

    IPC分类号： G01D5/14

    CPC分类号： B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

    摘要： A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

    摘要翻译： 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

    Field effect devices having a gate controlled via a nanotube switching element
    5.
    发明授权
    Field effect devices having a gate controlled via a nanotube switching element 有权
    具有通过纳米管开关元件控制的栅极的场效应器件

    公开(公告)号：US07709880B2

    公开(公告)日：2010-05-04

    申请号：US11742290

    申请日：2007-04-30

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L29/78

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

    摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

    摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

    Nanomechanical computer
    8.
    发明授权
    Nanomechanical computer 有权
    纳米机械电脑

    公开(公告)号：US07414437B1

    公开(公告)日：2008-08-19

    申请号：US11749533

    申请日：2007-05-16

    申请人： Robert H. Blick ,  Robert A. Marsland

    发明人： Robert H. Blick ,  Robert A. Marsland

    IPC分类号： H03K19/00 ,  H03K19/20 ,  H01L23/58

    CPC分类号： H01H1/0094 ,  Y10S977/724 ,  Y10S977/732 ,  Y10S977/94

    摘要： An electromechanical switching device employs a first nanoscale pillar shuttling charge between opposed charged electrodes. Motion of the first pillar is coupled to a second set of pillars providing controlled charge transfer between a second isolated set of electrodes. Standard logic elements may be constructed using this switching device.

    摘要翻译： 机电开关装置在相对的带电电极之间采用第一纳米级柱穿梭电荷。 第一支柱的运动耦合到第二组支柱，以在第二隔离的电极组之间提供受控的电荷转移。 可以使用该开关装置来构造标准逻辑元件。

    FIELD EFFECT DEVICES HAVING A GATE CONTROLLED VIA A NANOTUBE SWITCHING ELEMENT
    10.
    发明申请
    FIELD EFFECT DEVICES HAVING A GATE CONTROLLED VIA A NANOTUBE SWITCHING ELEMENT 有权
    具有通过纳米管开关元件控制的门的场效应器件

    公开(公告)号：US20080079027A1

    公开(公告)日：2008-04-03

    申请号：US11742290

    申请日：2007-04-30

    申请人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

    发明人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

    IPC分类号： H01L27/11 ,  H01L29/78

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

    摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

    摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。