公开(公告)号：US08782586B2

公开(公告)日：2014-07-15

申请号：US12582366

申请日：2009-10-20

申请人： Abdurrahman Sezginer ,  David Cooke Noice ,  Jason Sweis ,  Vassilios Gerousis ,  Sozen Yao

发明人： Abdurrahman Sezginer ,  David Cooke Noice ,  Jason Sweis ,  Vassilios Gerousis ,  Sozen Yao

IPC分类号： G06F17/50

CPC分类号： G06F17/5077 ,  G06F2217/12 ,  Y02P90/265

摘要： Disclosed are a method, apparatus, and program product for routing an electronic design using double patterning that is correct by construction. The layout that has been routed will by construction be designed to allow successful manufacturing with double patterning, since the router will not allow a routing configuration in the layout that cannot be successfully manufactured with double patterning.

摘要翻译： 公开了一种使用通过构造正确的双重图案化来布线电子设计的方法，装置和程序产品。 已经布线的布局将通过结构设计，以允许双重图案化的成功制造，因为路由器将不允许布局中的路由配置不能用双重图案化成功制造。

公开(公告)号：US08572517B2

公开(公告)日：2013-10-29

申请号：US12136277

申请日：2008-06-10

申请人： Dipankar Pramanik ,  Michiel Victor Paul Kruger ,  Roy V. Prasad ,  Abdurrahman Sezginer

发明人： Dipankar Pramanik ,  Michiel Victor Paul Kruger ,  Roy V. Prasad ,  Abdurrahman Sezginer

IPC分类号： G06F17/50

CPC分类号： G06F17/50 ,  G03F1/144 ,  G03F1/36

摘要： The present invention provides a method for compensating infidelities of a process that transfers a pattern to a layer of an integrated circuit, by minimizing, with respect to a photomask pattern, a cost function that quantifies the deviation between designed and simulated values of circuit parameters of the pattern formed on a semiconductor wafer.

摘要翻译： 本发明提供了一种用于补偿将图案转移到集成电路层的不完备性的方法，通过使关于光掩模图案最小化成本函数，该成本函数量化电路参数的设计值和模拟值之间的偏差 形成在半导体晶片上的图案。

公开(公告)号：US08423928B2

公开(公告)日：2013-04-16

申请号：US13271194

申请日：2011-10-11

申请人： Justin Ghan ,  Abdurrahman Sezginer

发明人： Justin Ghan ,  Abdurrahman Sezginer

IPC分类号： G06F17/50

CPC分类号： G03F7/70466 ,  G03F1/70

摘要： Some embodiments provide a method for optimally decomposing patterns within particular spatial regions of interest on a particular layer of a design layout for a multi-exposure photolithographic process. Specifically, some embodiments model the spatial region using a mathematical equation in terms of two or more intensities. Some embodiments then optimize the model across a set of feasible intensities. The optimization yields a set of intensities such that the union of the patterns created/printed from each exposure intensity most closely approximates the patterns within the particular regions. Based on the set of intensities, some embodiments then determine a decomposition solution for the patterns that satisfies design constraints of a multi-exposure photolithographic printing process. In this manner, some embodiments achieve an optimal photolithographic printing of the particular regions of interest without performing geometric rule based decomposition.

摘要翻译： 一些实施例提供了一种用于在用于多曝光光刻工艺的设计布局的特定层上的特定空间区域内最佳分解图案的方法。 具体地，一些实施例使用两个或更多个强度的数学方程来建模空间区域。 一些实施例然后在一组可行的强度上优化模型。 优化产生一组强度，使得从每个曝光强度创建/打印的图案的并集最接近于特定区域内的图案。 基于强度集合，一些实施例然后确定满足多曝光光刻印刷处理的设计约束的图案的分解解。 以这种方式，一些实施例在不执行基于几何规则的分解的情况下实现特定感兴趣区域的最佳光刻印刷。

公开(公告)号：US08279409B1

公开(公告)日：2012-10-02

申请号：US12536425

申请日：2009-08-05

申请人： Abdurrahman Sezginer ,  Hsu-Ting Huang ,  Jesus Orsely Carrero ,  Tatung Chow ,  Kostyantyn Chuyeshov ,  Gokhan Percin

发明人： Abdurrahman Sezginer ,  Hsu-Ting Huang ,  Jesus Orsely Carrero ,  Tatung Chow ,  Kostyantyn Chuyeshov ,  Gokhan Percin

IPC分类号： G03B27/32 ,  G03B27/54 ,  G06F17/50

CPC分类号： G03F1/70 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70516

摘要： The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.

摘要翻译： 本发明提供了一种用于通过使用在晶片的位置处的强度测量来计算缺点函数来校准光刻处理的计算模型的方法; 并通过使用计算的缺点函数确定计算模型的参数值来校准光刻模型或掩模制作模型。 该方法还可以使用由晶片上的特征的模拟和测量的临界尺寸之间的差的平方和定义的第二缺点函数。

公开(公告)号：US07743359B2

公开(公告)日：2010-06-22

申请号：US11203330

申请日：2005-08-13

申请人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

发明人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

IPC分类号： G06F17/50

CPC分类号： G06F17/5009 ,  G03F1/36 ,  G03F7/70441 ,  G06F17/5068

摘要： An apparatus and method of synthesizing a photolithographic data set includes using a first computational model to calculate a first figure-of-merit for the photolithographic data set; changing a first part of the photolithographic data set to increase the first figure-of-merit; and then using a second computational model to calculate a second figure-of-merit of the photolithographic data set; and changing a second part of the photolithographic data set to increase the second figure-of-merit. The second computational model enables figure-of-merit calculations to be executed at a significantly faster execution rate than the first computational model.

摘要翻译： 合成光刻数据集的装置和方法包括使用第一计算模型来计算光刻数据集的第一像素值; 改变光刻数据集的第一部分以增加第一品质因数; 然后使用第二计算模型来计算光刻数据集的第二像素值; 以及改变光刻数据集的第二部分以增加第二品质因数。 第二种计算模型能够以比第一种计算模型快得多的执行速度执行品质因数计算。

公开(公告)号：US20100037200A1

公开(公告)日：2010-02-11

申请号：US12189692

申请日：2008-08-11

申请人： Justin Ghan ,  Abdurrahman Sezginer

发明人： Justin Ghan ,  Abdurrahman Sezginer

IPC分类号： G06F17/50

CPC分类号： G03F7/70466 ,  G03F1/70

摘要： Some embodiments provide a method for optimally decomposing patterns within particular spatial regions of interest on a particular layer of a design layout for a multi-exposure photolithographic process. Specifically, some embodiments model the spatial region using a mathematical equation in terms of two or more intensities. Some embodiments then optimize the model across a set of feasible intensities. The optimization yields a set of intensities such that the union of the patterns created/printed from each exposure intensity most closely approximates the patterns within the particular regions. Based on the set of intensities, some embodiments then determine a decomposition solution for the patterns that satisfies design constraints of a multi-exposure photolithographic printing process. In this manner, some embodiments achieve an optimal photolithographic printing of the particular regions of interest without performing geometric rule based decomposition.

摘要翻译： 一些实施例提供了一种用于在用于多曝光光刻工艺的设计布局的特定层上的特定空间区域内最佳分解图案的方法。 具体地，一些实施例使用两个或更多个强度的数学方程来建模空间区域。 一些实施例然后在一组可行的强度上优化模型。 优化产生一组强度，使得从每个曝光强度创建/打印的图案的并集最接近于特定区域内的图案。 基于强度集合，一些实施例然后确定满足多曝光光刻印刷处理的设计约束的图案的分解解。 以这种方式，一些实施例在不执行基于几何规则的分解的情况下实现特定感兴趣区域的最佳光刻印刷。

公开(公告)号：US20080037015A1

公开(公告)日：2008-02-14

申请号：US11903238

申请日：2007-09-21

申请人： Adam Norton ,  Abdurrahman Sezginer ,  Fred Stanke

发明人： Adam Norton ,  Abdurrahman Sezginer ,  Fred Stanke

IPC分类号： G01J3/447

CPC分类号： G01B11/02 ,  G01J3/02 ,  G01J3/0294 ,  G01N21/211 ,  G01N21/25 ,  G01N21/474 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/213

摘要： An optical measurement system for evaluating a sample has a motor-driven rotating mechanism coupled to an azimuthally rotatable measurement head, allowing the optics to rotate with respect to the sample. A polarimetric scatterometer, having optics directing a polarized illumination beam at non-normal incidence onto a periodic structure on a sample, can measure optical properties of the periodic structure. An E-O modulator in the illumination path can modulate the polarization. The head optics collect light reflected from the periodic structure and feed that light to a spectrometer for measurement. A beamsplitter in the collection path can ensure both S and P polarization from the sample are separately measured. The measurement head can be mounted for rotation of the plane of incidence to different azimuthal directions relative to the periodic structures. The instrument can be integrated within a wafer process tool in which wafers may be provided at arbitrary orientation.

摘要翻译： 用于评估样品的光学测量系统具有耦合到方位角可旋转测量头的电动机旋转机构，允许光学器件相对于样品旋转。 具有将非正常入射的偏振照明光束引导到样品上的周期性结构上的光学偏振散射仪可以测量周期性结构的光学性质。 照明路径中的E-O调制器可以调制偏振。 头部光学器件收集从周期性结构反射的光并将光馈送到光谱仪进行测量。 收集路径中的分束器可以确保来自样品的S和P极化分别测量。 测量头可以安装成相对于周期性结构使入射平面旋转到不同的方位角方向。 仪器可以集成在晶片工艺工具中，其中可以以任意取向提供晶片。

公开(公告)号：US20070143733A1

公开(公告)日：2007-06-21

申请号：US11541921

申请日：2006-10-02

申请人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

发明人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

公开(公告)号：US07230703B2

公开(公告)日：2007-06-12

申请号：US10858587

申请日：2004-06-02

申请人： Abdurrahman Sezginer ,  Robert Shinagawa ,  Hsu-Ting Huang

发明人： Abdurrahman Sezginer ,  Robert Shinagawa ,  Hsu-Ting Huang

IPC分类号： G01B11/00

CPC分类号： G03F7/70633 ,  G01B11/26 ,  G01J3/2823

摘要： A method for measuring overlay in a sample includes obtaining an image of an overlay target that includes a series of grating stacks each having an upper and lower grating, each grating stack having a unique offset between its upper and lower grating. The image is obtained with a set of illumination and collection optics where the numerical aperture of the collection optics is larger than the numerical aperture of the illumination optics and with the numerical apertures of the illumination and collection optics are selected so that the unit cells of gratings are not resolved, the grating stacks are resolved and they appear to have a uniform color within the image of the overlay target.

摘要翻译： 用于测量样本中覆盖层的方法包括获得包括一系列具有上和下光栅的一系列光栅堆叠的覆盖目标的图像，每个光栅堆叠在其上和下光栅之间具有唯一的偏移。 利用一组照明和收集光学器件获得图像，其中收集光学器件的数值孔径大于照明光学器件的数值孔径，并且选择照明和收集光学器件的数值孔径，使得光栅的单元电池 没有解决，光栅堆栈被解决，并且它们在覆盖目标的图像内看起来具有均匀的颜色。

公开(公告)号：US20070081170A1

公开(公告)日：2007-04-12

申请号：US11635878

申请日：2006-12-08

申请人： Abdurrahman Sezginer ,  Kenneth Johnson

发明人： Abdurrahman Sezginer ,  Kenneth Johnson

IPC分类号： G01B11/14

CPC分类号： H01L23/544 ,  G03F7/70633 ,  H01L22/24 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.

摘要翻译： 公开了一种控制用于在半导体晶片的层上制造图案的光刻工艺的方法。 该方法包括提供至少两个散射测量目标，每个目标具有形成在与形成在下层中的第二图案基本对准的上层中的第一图案。 目标被光学检查。 创建每个目标的理论模型，其中每个模型包括定义目标的多个未知参数，并且其中至少一个参数对于每个目标共同。 进行回归分析，其中将所测量的目标的光学响应与通过改变应用于模型的参数的值产生的计算的光学响应相比较。 在回归分析期间，维持常用参数的公用值。 结果用于控制光刻工艺。