摘要:
The present invention discloses an apparatus and method for disinfecting an object in a batch, continuous, or mixed mode. The apparatus according to the present invention comprises a bath to/from which water is flowed in/drained out; and at least one ultraviolet ray (UV) lamp unit assembly mounted in the bath, each UV lamp unit assembly including a plurality of UV lamp units. Each UV lamp unit comprises a quartz tube, a UV lamp mounted in the quartz tube and a photo-catalyst layer of titanium dioxide formed on an outer surface of the quartz tube to disinfect an object in the bath by the photo-catalytic reaction of titanium dioxide and UV. The apparatus of the present invention may comprise a conveyer device comprising a driving roller, driven rollers and a conveyer belt wound around the rollers, the conveyer device is divided into an inlet portion formed at a first outside of the bath, a conveying portion formed in water in the bath and a discharging portion formed at a second outside of the bath.
摘要:
A Fibre Channel router used to join fabrics. EX_ports are used to connect to the fabrics. The EX_port joins the fabric but the router will not merge into the fabric. Ports in the Fibre Channel router can be in a fabric, but other ports can be connected to other fabrics. Fibre Channel routers can be interconnected using a backbone fabric. Global, interfabric and encapsulation headers are developed to allow routing by conventional Fibre Channel switch devices in the backbone fabric and simplify Fibre Channel router routing. Phantom domains and devices must be developed for each of the fabrics being interconnected. Front phantom domains are present at each port directly connected to a fabric. Each of these is then connected to at least one translate phantom domain. Zoning is accomplished by use of a special LSAN zoning naming convention. This allows each administrator to independently define devices are accessible.
摘要:
Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G), and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G, and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G, and B unit pixels includes the channel layer made of silicon layers of different film qualities.
摘要:
A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.
摘要:
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.
摘要:
The present invention relates to a heat exchanger, and more particularly, to a heat exchanger in which a partition wall integrally formed with a header is fixedly inserted into a partition inserting groove of a tank and it is easy to check leakage of a heat exchange medium between the tank and the partition wall through a leakage checking hole formed in the partition inserting groove.
摘要:
A pattern film in accordance with one aspect of the present invention includes a first film and a second film. A first pattern array is built in the first film. The second film is attached to the first film. Further, a second pattern array is built in the second film. The second pattern array is partially overlapped with the first pattern array. The first and the second pattern arrays may be electrically connected to each other by a pressurizing process. Thus, a time and a cost for manufacturing the pattern film may be reduced. As a result, a printed circuit board and a semiconductor package having the pattern film may also be manufactured at a low expense.
摘要:
A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.
摘要:
A thin film transistor includes a semiconductor layer a source electrodes a drain electrode and a gate electrode. The semiconductor layer includes a plurality of grain boundaries disposed along a first direction. An acute angle between a gate electrode and a grain boundary prevents grain to boundaries from being formed at the boundary between a channel part and an ion doped part.
摘要:
A flat panel display lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display has a light emitting device, a switching thin film transistor including a semiconductor active layer having at least a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having at least a channel area for driving the light emitting device so that a predetermined current flows through the light emitting device according to the data signal, the channel areas of the switching TFT and the driving TFT having different directions of current flow.