公开(公告)号：US12193236B2

公开(公告)日：2025-01-07

申请号：US17772280

申请日：2020-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi Kunitake ,  Satoru Ohshita ,  Kazuki Tsuda ,  Tatsuya Onuki

IPC: H10B43/40 ,  G11C16/08 ,  H10B43/27

Abstract: A memory device with a small number of wirings using a NAND flash memory having a three-dimensional structure with a large number of stacked memory cell layers is provided. A decoder is formed using an OS transistor. An OS transistor can be formed by a method such as a thin film method, whereby the decoder can be provided to be stacked above the NAND flash memory having a three-dimensional structure. This can reduce the number of wirings provided substantially perpendicular to the memory cell layers.

公开(公告)号：US20250008832A1

公开(公告)日：2025-01-02

申请号：US18704411

申请日：2022-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hayato YAMAWAKI ,  Sachiko KAWAKAMI ,  Naoaki HASHIMOTO ,  Eriko AOYAMA ,  Yasuhiro NIIKURA

IPC: H10K71/20 ,  H10K50/13 ,  H10K71/00 ,  H10K71/40 ,  H10K71/60 ,  H10K85/20 ,  H10K85/60

Abstract: A method for removing oxygen from an oxygen adduct of anthracene, which is generated by irradiation with ultraviolet rays, is provided. Alternatively a method for manufacturing an electronic device or a display device with favorable reliability is provided. A method for manufacturing an electronic device, including a step of irradiating a layer including an organic compound including an anthracene structure with ultraviolet rays at an energy density higher than or equal to 1 mJ/cm2 and lower than or equal to 1000 mJ/cm2 in an atmosphere where oxygen exists and a step of performing heating at a temperature higher than or equal to 80° C. in an atmosphere with an oxygen concentration lower than or equal to 300 ppm is provided.

公开(公告)号：US20250008818A1

公开(公告)日：2025-01-02

申请号：US18711284

申请日：2022-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasutaka NAKAZAWA ,  Naoto GOTO ,  Saki EGUCHI ,  Sachiko KATANIWA

IPC: H10K59/80 ,  H10K39/00 ,  H10K59/12 ,  H10K59/95

Abstract: A display apparatus with extremely high resolution is provided. A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a first insulating layer, a second insulating layer, and a third insulating layer. The first light-emitting element includes a first pixel electrode and a first organic layer. The second light-emitting element includes a second pixel electrode and a second organic layer. The first insulating layer includes a groove-like region provided along a side of the first pixel electrode in a plan view. The groove-like region includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The first region and the second region each have a width greater than or equal to 20 nm and less than or equal to 500 nm. The second insulating layer includes a region in contact with a top surface of the first organic layer, a region in contact with a side surface of the first organic layer, and a region located below the first pixel electrode. The third insulating layer includes a region in contact with a top surface of the second organic layer, a region in contact with a side surface of the second organic layer, and a region located below the second pixel electrode.

公开(公告)号：US20250008721A1

公开(公告)日：2025-01-02

申请号：US18706096

申请日：2022-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hitoshi KUNITAKE ,  Rihito WADA ,  Kiyoshi KATO ,  Tatsuya ONUKI

IPC: H10B12/00

Abstract: A small semiconductor device is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer includes a p-channel first transistor containing silicon in a channel formation region. The second layer includes an n-channel second transistor containing a metal oxide in a channel formation region. The first transistor and the second transistor form a CMOS circuit. A channel length of the first transistor is longer than a channel length of the second transistor.

公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240429319A1

公开(公告)日：2024-12-26

申请号：US18817534

申请日：2024-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

公开(公告)号：US20240429287A1

公开(公告)日：2024-12-26

申请号：US18825421

申请日：2024-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US12178093B2

公开(公告)日：2024-12-24

申请号：US17642425

申请日：2020-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima ,  Daisuke Kubota ,  Taisuke Kamada ,  Ryo Hatsumi

IPC: H01L29/08 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K59/121 ,  H10K59/131 ,  H10K77/10 ,  H10K101/40

Abstract: The resolution of a display apparatus having a light detection function is increased. A display apparatus includes a plurality of transistors and a light-emitting and light-receiving device in a subpixel. The light-emitting and light-receiving device has a function of emitting light of a first color and a function of receiving light of a second color. One of a source and a drain of a first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a gate of a second transistor. One electrode of the light-emitting and light-receiving device is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of a third transistor, and one of a source and a drain of a fifth transistor. One of a source and a drain of a fourth transistor is electrically connected to a second wiring, and the other thereof is electrically connected to the other of the source and the drain of the third transistor.

公开(公告)号：US20240421284A1

公开(公告)日：2024-12-19

申请号：US18819233

申请日：2024-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei OGUNI ,  Takuya MIWA

IPC: H01M4/136 ,  C01B25/45 ,  H01M4/02 ,  H01M4/36 ,  H01M4/58 ,  H01M10/0525 ,  H01M10/42

Abstract: A lithium-ion secondary battery including a lithium-containing complex phosphate as a positive electrode active material is provided. Furthermore, a positive electrode active material with high diffusion rate of lithium ions is provided to provide a lithium-ion secondary battery with high output. A positive electrode active material of a lithium-ion secondary battery includes a first plate-like component and a second plate-like component, a third prismatic component between the first component and the second component, and a space between the first component and the second component.

公开(公告)号：US20240420967A1

公开(公告)日：2024-12-19

申请号：US18761378

申请日：2024-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA

IPC: H01L21/385 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.